Novel type-II material system for laser applications in the near-infrared regime.

The design and experimental realization of a type-II "W"-multiple quantum well heterostructure for emission in the λ > 1.2 µm range is presented. The experimental photoluminescence spectra for different excitation intensities are analyzed using microscopic quantum theory. On the basis of the good theory-experiment agreement, the gain properties of the system are computed using the semiconductor Bloch equations. Gain values comparable to those of type-I systems are obtained.