Layer thickness influenced irradiation effects of proton beam on MoS2 field effect transistors.

We investigated the influence of the flake thickness for molybdenum disulfide (MoS2) field effect transistors on the effect of a 150 keV high-energy proton beam applied on these devices. The electrical characteristics of the devices with channel thicknesses ranging from monolayer to bulk were measured before and after proton irradiation with a proton fluence of 5 × 1014 cm-2. The subthreshold swing (SS), threshold voltage shift and electron mobility were extracted with the Y-function method after proton irradiation and significant degradation were observed. It is found that, with the increase of layer thickness, mobility degradation and threshold voltage shift both eased, but the SS degradation was insensitive to the MoS2 flake thickness increase. We also demonstrate that the threshold voltage shift is dominated by oxide charges; however, the mobility and SS degradations are mainly affected by the interface traps. Our study will enhance the understanding of the influence of high-energy particles on MoS2-based nano-electronic devices. By increasing the MoS2 flake thickness to a certain extent, one can hopefully find a balance between effectively resisting [Formula: see text] shift and achieving high mobility and small SS degradation.

Reducing metal/graphene contact resistance via N, N-dimethylacetamide-assisted clean fabrication process.

Contact resistance (RC) is of great importance for radio frequency (RF) applications of graphene, especially graphene field effect transistors (FETs) with short channel. FETs and transmission line model test structures based on chemical vapor deposition grown graphene are fabricated. The effects of employing traditional lithography solvent (Acetone) and strong solvents for photo resist, such as N, N-Dimethylacetamide (ZDMAC) and N-Methyl pyrrolidone (NMP), are systematically investigated. It was found that ZDMAC and NMP have more proficiency than acetone to remove the photo-resist residues and contaminations attached on graphene surface, enabling clean surface of graphene. However, strong solvents are found to destroy the lattice structure of graphene channel and induce defects in graphene lattice. Clean surface contributes to a significant reduction in theRCbetween graphene channel and metal electrode, and the defects introduced on graphene surface underneath metal electrodes also contribute the reduction ofRC. But defects and deformation of lattice will increase the resistance in graphene channel and lead to the compromise of device performance. To address this problem, a mix wet-chemical approach employing both acetone and ZDMAC was developed in our study to realize a 19.07% reduction ofRC, without an unacceptable mass production of defects.

Stable p-type chemical doping of graphene with reduced contact resistance by single-layer perfluorinated polymeric sulfonic acid.

Recently, graphene has led to unprecedented progress in device performance at the atom limit. A high performance of field-effect transistors requires a low graphene-metal contact resistance. However, the chemical doping methods used to tailor or improve the properties of graphene are sensitive to ambient conditions. Here, we fabricate a single-layer perfluorinated polymeric sulfonic acid (PFSA), also known as Nafion, between the graphene and the substrate as a p-type dopant. The PFSA doping method, without inducing any additional structural defects, reduces the contact resistance of graphene by ∼28.8%, which has a significant impact on practical applications. This reduction can be maintained for at least 67 days due to the extreme stability of PFSA. Effective, uniform and stable, the PFSA doping method provides an efficient way to reduce the contact resistance of graphene applications.

A uniform stable P-type graphene doping method with a gold etching process.

Graphene is one of the materials with the most potential for post-silicon electronics because of its outstanding electrical, optical, and mechanical properties. However, the lack of a uniform stable doping method extremely limits the various possible applications of graphene. Here, we developed a uniform and stable graphene efficient p-doping method. Through etching a thin gold film on graphene with a KI/I2 solution, iodine complexes are produced as the dopant absorbing on the graphene surface, and induce extra holes in graphene. Utilizing this method, the graphene film can be effectively doped to p-type without producing undesirable defects, and the roughness of the graphene surface can still be maintained at an ultra-low nanoscale (RMS roughness ∼0.739 nm). The doping effectiveness can be clearly verified by the changes in the Raman spectrum, and the Dirac point shift of the graphene-based transistor, and the reduction of sheet resistance (∼27.2%). Furthermore, the substantially coincident transfer curves after 45 days reveal the long-term stable doping effects. Therefore, this doping method can exploit a way for various graphene-based applications, such as phototransistors, sensors, and organic thin-film transistors.