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Ultrafast spin dynamics is crucial for the next-generation spintronic devices towards high-speed data processing. Here, we investigate the ultrafast spin dynamics of Neodymium/Ni80Fe20 (Nd/Py) bilayers by the time-resolved magneto-optical Kerr effect. The effective modulation of spin dynamics at Nd/Py interfaces is realized by an external magnetic field. The effective magnetic damping of Py increases with increasing Nd thickness, and a large spin mixing conductance (â¼19.35×1015â cm-2) at Nd/Py interface is obtained, representing the robust spin pumping effect by Nd/Py interface. The tuning effects are suppressed at a high magnetic field due to the reduced antiparallel magnetic moments at Nd/Py interface. Our results contribute to understanding ultrafast spin dynamics and spin transport behavior in high-speed spintronic devices.
RESUMO
Magnonics is an emerging field within spintronics that focuses on developing novel magnetic devices capable of manipulating information through the modification of spin waves in nanostructures with submicron size. Here, we provide a confined magnetic rectangular element to modulate the standing spin waves, by changing the saturation magnetisation (MS), exchange constant (A), and the aspect ratio of rectangular magnetic elements via micromagnetic simulation. It is found that the bulk mode and the edge mode of the magnetic element form a hybrid with each other. With the decrease in MS, both the Kittel mode and the standing spin waves undergo a shift towards higher frequencies. On the contrary, as A decreases, the frequencies of standing spin waves become smaller, while the Kittel mode is almost unaffected. Moreover, when the length-to-width aspect ratio of the element is increased, standing spin waves along the width and length become split, leading to the observation of additional modes in the magnetic spectra. For each mode, the vibration style is discussed. These spin dynamic modes were further confirmed via FMR experiments, which agree well with the simulation results.
RESUMO
Two-dimensional van der Waals (2D vdW) materials are widely used in spin-orbit torque (SOT) devices. Recent studies have demonstrated the low crystal symmetry and large spin Hall conductivity of 2D vdW ZrSe3, indicating its potential applications in low-power SOT devices. Here, we study the interfacial contribution of SOTs and current-induced magnetization switching in the ZrSe3/Py (Ni80Fe20) and ZrSe3/Cu/Py heterostructures. SOT efficiencies of samples are detected by the spin-torque ferromagnetic resonance (ST-FMR), and out-of-plane damping-like torque (τB) is observed. The ratio between τB and the field-like torque (τA) decreases from 0.175 to 0.138 when inserting 1 nm Cu at the interface and then drops to 0.001 when the thickness of Cu intercalation is 2 nm, indicating that Cu intercalation inhibits the τB component of SOT. Moreover, the SOT efficiency is increased from 3.05 to 5.21, which may be attributed to the Cu intercalation being beneficial to improve the interface between Py and ZrSe3. Theoretical calculation has shown that the Cu spacer can change the conductivity of ZrSe3 from semiconductor to conductor, thereby decreasing the Schottky barrier and increasing the transmission efficiency of the spin current. Furthermore, magneto-optical Kerr effect (MOKE) microscopy is employed to verify the current-driven magnetization switching in these structures. In comparison to the ZrSe3/Py bilayer, the critical current density of ZrSe3/Cu/Py is reduced when inserting 1 nm Cu, demonstrating the higher SOT efficiency and lower power consumption in ZrSe3/Cu/Py structures.
RESUMO
Magnetic semiconductors with high critical temperature have long been the focus in materials science and are also known as one of the fundamental questions in two-dimensional (2D) materials. Based on density functional theory calculations, we predict a 2D spin-gapless ferromagnetic semiconductor of CrGa2Se4 monolayer, in which the type of spin-polarized current can be tuned by tailoring the Fermi energy. Moreover, the magnetic anisotropy energy calculations indicate that the CrGa2Se4 monolayer possesses spin anisotropy both in the basal plane and the vertical plane. This originates from the distortion-induced rearrangement of the 3d electrons in the CrSe6 octahedron and results in an inclined easy axis out of the film. The Curie temperature (Tc) of ferromagnetic phase transition for 2D CrGa2Se4 is more than 200 K. This 2D material shows promising transport properties for spintronics applications and is also important for fundamental research in 2D magnetism.
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Recent advances in two-dimensional van der Waals (2D vdW) magnets provide new platforms to study their magnetism in reduced dimensions. However, most of the studies performed to date have been limited to low temperatures. Here, we report the proximity effect of a 2D vdW magnet Fe3GeTe2 (FGT) on nickel (Ni) films at room temperature. Ferromagnetic resonance measurements show that FGT can increase the perpendicular magnetic anisotropy (PMA) and magnetic damping of the adjacent Ni film. Such an interfacial effect is observed at room temperature, and becomes more pronounced as the temperature decreases. A similar effect is also achieved in another 2D heterostructure of Cr2Ge2Te6/Ni, implying its universality in a variety of 2D magnetic materials. Our work provides a new approach for utilizing 2D magnets in spintronics at room temperature.
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Amorphous CoFeB films grown on GaAs(001) substrates demonstrating significant in-plane uniaxial magnetic anisotropy were investigated by vector network analyzer ferromagnetic resonance. Distinct in-plane anisotropy of magnetic damping, with a largest maximum-minimum damping ratio of about 109%, was observed via analyzing the frequency dependence of linewidth in a linear manner. As the CoFeB film thickness increases from 3.5 nm to 30 nm, the amorphous structure for all the CoFeB films is maintained while the magnetic damping anisotropy decreases significantly. In order to reveal the inherent mechanism responsible for the anisotropic magnetic damping, studies on time-resolved magneto-optical Kerr effect and high resolution transmission electron microscopy were performed. Those results indicate that the in-plane angular dependent anisotropic damping mainly originates from two-magnon scattering, while the Gilbert damping keeps almost unchanged.
RESUMO
Ferromagnet/two-dimensional transition-metal dichalcogenide (FM/2D TMD) interfaces provide attractive opportunities to push magnetic information storage to the atomically thin limit. Existing work has focused on FMs contacted with mechanically exfoliated or chemically vapor-deposition-grown TMDs, where clean interfaces cannot be guaranteed. Here, we report a reliable way to achieve contamination-free interfaces between ferromagnetic CoFeB and molecular-beam epitaxial MoSe2. We show a spin reorientation arising from the interface, leading to a perpendicular magnetic anisotropy (PMA), and reveal the CoFeB/2D MoSe2 interface allowing for the PMA development in a broader CoFeB thickness-range than common systems such as CoFeB/MgO. Using X-ray magnetic circular dichroism analysis, we attribute generation of this PMA to interfacial d-d hybridization and deduce a general rule to enhance its magnitude. We also demonstrate favorable magnetic softness and considerable magnetic moment preserved at the interface and theoretically predict the interfacial band matching for spin filtering. Our work highlights the CoFeB/2D MoSe2 interface as a promising platform for examination of TMD-based spintronic applications and might stimulate further development with other combinations of FM/2D TMD interfaces.
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By analyzing the in-plane angular dependence of ferromagnetic resonance linewidth, we show that the Gilbert damping constant in ultrathin Fe3O4 epitaxial films on GaAs substrate can be enhanced by thickness reduction and oxygen vacancies in the interface. At the same time, the uniaxial magnetic anisotropy due to the interface effect becomes significant. Using the element-specific technique of X-ray magnetic circular dichroism, we find that the orbital-to-spin moment ratio increases with decreasing film thickness, in full agreement with the increase in the Gilbert damping obtained for these ultrathin single-crystal films. Combined with the first-principle calculations, the results suggest that the bonding with Fe and Ga or As ions and the ionic distortion near the interface, as well as the FeO defects and oxygen vacancies, may increase the spin-orbit coupling in ultrathin Fe3O4 epitaxial films and in turn provide an enhanced damping.