Toward nanotechnology-enabled face masks against SARS-CoV-2 and pandemic respiratory diseases.

Wearing a face mask has become a necessity following the outbreak of the coronavirus (COVID-19) disease, where its effectiveness in containing the pandemic has been confirmed. Nevertheless, the pandemic has revealed major deficiencies in the ability to manufacture and ramp up worldwide production of efficient surgical-grade face masks. As a result, many researchers have focused their efforts on the development of low cost, smart and effective face covers. In this article, following a short introduction concerning face mask requirements, the different nanotechnology-enabled techniques for achieving better protection against the SARS-CoV-2 virus are reviewed, including the development of nanoporous and nanofibrous membranes in addition to triboelectric nanogenerators based masks, which can filter the virus using various mechanisms such as straining, electrostatic attraction and electrocution. The development of nanomaterials-based mask coatings to achieve virus repellent and sterilizing capabilities, including antiviral, hydrophobic and photothermal features are also discussed. Finally, the usability of nanotechnology-enabled face masks is discussed and compared with that of current commercial-grade N95 masks. To conclude, we highlight the challenges associated with the quick transfer of nanomaterials-enabled face masks and provide an overall outlook of the importance of nanotechnology in counteracting the COVID-19 and future pandemics.

Noninvasive Featherlight Wearable Compliant "Marine Skin": Standalone Multisensory System for Deep-Sea Environmental Monitoring.

Advances in marine research to understand environmental change and its effect on marine ecosystems rely on gathering data on species physiology, their habitat, and their mobility patterns using heavy and invasive biologgers and sensory telemetric networks. In the past, a lightweight (6 g) compliant environmental monitoring system: Marine Skin was demonstrated. In this paper, an enhanced version of that skin with improved functionalities (500-1500% enhanced sensitivity), packaging, and most importantly its endurance at a depth of 2 km in the highly saline Red Sea water for four consecutive weeks is reported. A unique noninvasive approach for attachment of the sensor by designing a wearable, stretchable jacket (bracelet) that can adhere to any species irrespective of their skin type is also illustrated. The wearable featherlight (<0.5 g in air, 3 g with jacket) gadget is deployed on Barramundi, Seabream, and common goldfish to demonstrate the noninvasive and effective attachment strategy on different species of variable sizes which does not hinder the animals' natural movement or behavior.

Nano-scale transistors for interfacing with brain: design criteria, progress and prospect.

According to the World Health Organization, one quarter of the world's population suffers from various neurological disorders ranging from depression to Alzheimer's disease. Thus, understanding the operation mechanism of the brain enables us to help those who are suffering from these diseases. In addition, recent clinical medicine employs electronic brain implants, despite the fact of being invasive, to treat disorders ranging from severe coronary conditions to traumatic injuries. As a result, the deaf could hear, the blind could see, and the paralyzed could control robotic arms and legs. Due to the requirement of high data management capability with a power consumption as low as possible, designing nanoscale transistors as essential I/O electronics is a complex task. Herein, we review the essential design criteria for such nanoscale transistors, progress and prospect for implantable brain-machine-interface electronics. This article also discusses their technological challenges for practical implementation.

Cranial subarachnoid and subdural haemorrhage caused by spinal melanoma metastasis.

A 73-year-old female with a history of metastatic melanoma presented with extensive intracranial subarachnoid haemorrhage. Cranial imaging failed to reveal any vascular anomaly or tumour. MRI of the neuroaxis revealed a melanoma metastasis at T10 with associated subarachnoid haemorrhage. We review the literature on this rare presentation of subarachnoid haemorrhage.

Case report of intraventricular schwannoma.

We describe the case of a 52 year old male presenting with subacute headache. Cranial imaging suggested haemorrhage into a parietal, partially intraventricular, space occupying lesion. The radiology was interpreted to be most consistent with a glioblastoma. The lesion was near totally resected. The histopathology was a WHO grade 1 schwannoma.

Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer.

2D molybdenum disulfide (MoS2 ) possesses excellent optoelectronic properties that make it a promising candidate for use in high-performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer-deposited TiO2 interlayer (between exfoliated MoS2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS2 /SiO2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.

Contact resistance reduction of ZnO thin film transistors (TFTs) with saw-shaped electrode.

We report on a saw-shaped electrode architecture ZnO thin film transistor (TFT), which effectively increases the channel width. The contact line of the saw-shaped electrode is almost twice as long at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and a reduction in the contact resistance by over 50%, when compared to a typically shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to the extension of the channel width. This technique can contribute to device performance enhancement, and in particular reduce the contact resistance, which is a serious challenge.

Deterministic Integration of Out-of-Plane Sensor Arrays for Flexible Electronic Applications.

A design strategy for fully flexible electrode arrays with out-of-plane through polymer vias (TPVs) for monolithic 3D integration of sensor readout circuitry is presented. The TPVs are formed using copper embedded in thin polyimide structure for support. The copper interconnects offer a stable impedance frequency response from DC to 100 kHz (Z ≈ 20 Ω, θ ≈ 0°).

Three-terminal nanoelectromechanical switch based on tungsten nitride--an amorphous metallic material.

Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WN x thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WN x switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

Vertically grown multiwalled carbon nanotube anode and nickel silicide integrated high performance microsized (1.25 µL) microbial fuel cell.

Microbial fuel cells (MFCs) are an environmentally friendly method for water purification and self-sustained electricity generation using microorganisms. Microsized MFCs can also be a useful power source for lab-on-a-chip and similar integrated devices. We fabricated a 1.25 µL microsized MFC containing an anode of vertically aligned, forest type multiwalled carbon nanotubes (MWCNTs) with a nickel silicide (NiSi) contact area that produced 197 mA/m(2) of current density and 392 mW/m(3) of power density. The MWCNTs increased the anode surface-to-volume ratio, which improved the ability of the microorganisms to couple and transfer electrons to the anode. The use of nickel silicide also helped to boost the output current by providing a low resistance contact area to more efficiently shuttle electrons from the anode out of the device.

Technology Roadmap for Flexible Sensors.

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.

Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits.

We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow.

Pressure-Driven Two-Input 3D Microfluidic Logic Gates.

Microfluidics is a continuously growing field with potential not only in the fields of medical, chemical, and bioanalysis, but also in the domains of optics and information technology. Here, a pressure-driven 3D microfluidic chip is demonstrated with multiple logic Boolean functions. The presence and absence of fluid at the output of the gates represent the binary signals 1 and 0, respectively. Therefore, the logic gates do not require a specially functionalized liquid to operate. The chip is based on a multilevel of poly(methyl methacrylate) (PMMA)-based polymeric sheets with aligned microchannels while a flexible polyimide-based sheet with a cantilever-like structure is embedded to enable a one-directional flow of the liquid. Several Boolean logic functions are realized (AND, OR, and XOR) using different fluids in addition to a half adder digital microfluidic circuit. The outputs of the logic gates are designed to be at different heights within the 3D chip to enable different pressure drops. The results show that the logic gates are operational for a specific range of flow rates, which is dependent on the microchannel dimensions, surface roughness, and fluid viscosity and therefore on their hydraulic resistance. The demonstrated approach enables simple cascading of logic gates for large-scale microfluidic computing systems.

CMOS Enabled Microfluidic Systems for Healthcare Based Applications.

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications.

Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today's digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered.

InAs/Si Hetero-Junction Nanotube Tunnel Transistors.

Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in 'ON' state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

Ultrastretchable and flexible copper interconnect-based smart patch for adaptive thermotherapy.

Unprecedented 800% stretchable, non-polymeric, widely used, low-cost, naturally rigid, metallic thin-film copper (Cu)-based flexible and non-invasive, spatially tunable, mobile thermal patch with wireless controllability, adaptability (tunes the amount of heat based on the temperature of the swollen portion), reusability, and affordability due to low-cost complementary metal oxide semiconductor (CMOS) compatible integration.

Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation.

An industry standard 8'' silicon-on-insulator wafer based ultra-thin (1 µm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor.

Can we build a truly high performance computer which is flexible and transparent?

State-of-the art computers need high performance transistors, which consume ultra-low power resulting in longer battery lifetime. Billions of transistors are integrated neatly using matured silicon fabrication process to maintain the performance per cost advantage. In that context, low-cost mono-crystalline bulk silicon (100) based high performance transistors are considered as the heart of today's computers. One limitation is silicon's rigidity and brittleness. Here we show a generic batch process to convert high performance silicon electronics into flexible and semi-transparent one while retaining its performance, process compatibility, integration density and cost. We demonstrate high-k/metal gate stack based p-type metal oxide semiconductor field effect transistors on 4 inch silicon fabric released from bulk silicon (100) wafers with sub-threshold swing of 80 mV dec(-1) and on/off ratio of near 10(4) within 10% device uniformity with a minimum bending radius of 5 mm and an average transmittance of ~7% in the visible spectrum.

Are nanotube architectures more advantageous than nanowire architectures for field effect transistors?

Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve appreciable amount of current necessary for high performance computation causing an area penalty and compromised functionality. Here we show that a FET with a nanotube architecture and core-shell gate stacks is capable of achieving the desirable leakage characteristics of the nanowire FET while generating a much larger drive current with area efficiency. The core-shell gate stacks of silicon nanotube FETs tighten the electrostatic control and enable volume inversion mode operation leading to improved short channel behavior and enhanced performance. Our comparative study is based on semi-classical transport models with quantum confinement effects which offers new opportunity for future generation high performance computation.