Thermal Stability of Chalcogenide Perovskites.

Chalcogenide perovskites (CPs) have recently attracted interest as a class of materials with practical potential in optoelectronics and have been suggested as a more thermally stable alternative to intensely studied halide perovskites (HPs). Here we report a comparative study of the thermal stability of representative HPs, MAPbI3 (MA = CH3NH3+, methylammonium) and CsPbI3, and a series of CPs with compositions BaZrS3, ß-SrZrS3, BaHfS3, SrHfS3. Changes in the crystal structure, chemical composition, and optical properties upon heating in air up to 800 °C were studied using thermogravimetric analysis, temperature-dependent X-ray diffraction, energy-dispersive X-ray spectroscopy, and diffuse reflectance spectroscopy. While HPs undergo phase transitions and thermally decompose at temperatures below 300 °C, the CPs show no changes in crystal phase or composition when heated up to at least 450 °C. At 500 °C CPs oxidize on time scales of several hours, forming oxides and sulfates. The structural origins of the higher thermal and phase stability of the CPs are discussed.

Green Colloidal Synthesis of MoS2 Nanoflakes.

Currently, two approaches dominate the large-scale production of MoS2: liquid-phase exfoliation, referred to as the top-down approach, and bottom-up colloidal synthesis from molecular precursors. Known colloidal synthesis approaches utilize toxic precursors. Here, an alternative green route for the bottom-up synthesis of MoS2 nanoflakes (NFs) is described. The NFs were synthesized by colloidal synthesis using [Mo(CH3COO)2]2 and a series of sulfur (S)-precursors including thioacetamide (TAA), 3-mercaptopropionic acid (3-MPA), l-cysteine (L-CYS), mercaptosuccinic acid (MSA), 11-mercaptoundecanoic acid (MUA), 1-dodecanethiol (DDTH), and di-tert-butyl disulfide (DTBD). While TAA, an S-precursor most commonly used for MoS2 NF preparation, is a known carcinogen, the other investigated S-precursors have low or no known toxicity. High-resolution scanning transmission electron microscopy (HR-STEM) and grazing incidence wide-angle X-ray scattering (GIWAXS) confirmed that in all cases, the syntheses yielded single-layer MoS2 NFs with lateral sizes smaller than 15 nm and a well-defined crystal structure. Electronic absorption and Raman spectra showed characteristic features associated with the MoS2 monolayers. The evolution of the absorption spectra of the growth solution during the syntheses reveals how the kinetics of the NF formation is affected by the S-precursor as well as the nature of the coordinating ligands.

Synthesis of Sulfide Perovskites by Sulfurization with Boron Sulfides.

Chalcogenide perovskites (CPs), with the general composition ABX3, where A and B are metals and X = S and Se, have recently emerged as promising materials for application in photovoltaics. However, the development of CPs and their applications has been hindered by the limitations of available preparation methods. Here we present a new approach for the synthesis of CPs, based on the sulfurization of ternary and binary oxides or carbonates with in situ formed boron sulfides. In contrast to the previously described approaches, the method presented here uses chemically stable starting materials and yields pure-phase crystalline CPs within several hours, under low hazard conditions. CP yields over 95% are obtained at temperatures as low as 600 °C. The generality of the approach is demonstrated by the preparation of CPs with compositions BaZrS3, ß-SrZrS3, BaHfS3, SrHfS3, and EuHfS3. Mechanistic insights about the formation of CPs are discussed.

Reorientation of π-conjugated molecules on few-layer MoS2 films.

Small π-conjugated organic molecules have attracted substantial attention in the past decade as they are considered as candidates for future organic-based (opto-)electronic applications. The molecular arrangement in the organic layer is one of the crucial parameters that determine the efficiency of a given device. The desired orientation of the molecules is achieved by a proper choice of the underlying substrate and growth conditions. Typically, one underlying material supports only one inherent molecular orientation at its interface. Here, we report on two different orientations of diindenoperylene (DIP) molecules on the same underlayer, i.e. on a few-layer MoS2 substrate. We show that DIP molecules adopt a lying-down orientation when deposited on few-layer MoS2 with horizontally oriented layers. In contrast, for vertically aligned MoS2 layers, DIP molecules are arranged in a standing-up manner. Employing in situ and real-time grazing-incidence wide-angle X-ray scattering (GIWAXS), we monitored the stress evolution within the thin DIP layer from the early stages of the growth, revealing different substrate-induced phases for the two molecular orientations. Our study opens up new possibilities for the next-generation of flexible electronics, which might benefit from the combination of MoS2 layers with unique optical and electronic properties and an extensive reservoir of small organic molecules.

Optical Characterization of Few-Layer PtSe2 Nanosheet Films.

Thin films of transition-metal dichalcogenides are potential materials for optoelectronic applications. However, the application of these materials in practice requires knowledge of their fundamental optical properties. Many existing methods determine optical constants using predefined models. Here, a different approach was used. We determine the sheet conductance and absorption coefficient of few-layer PtSe2 in the infrared and UV-vis ranges without recourse to any particular model for the optical constants. PtSe2 samples with a thickness of about 3-4 layers were prepared by selenization of 0.5 nm thick platinum films on sapphire substrates at different temperatures. Differential reflectance was extracted from transmittance and reflectance measurements from the front and back of the sample. The film thickness, limited to a few atomic layers, allowed a thin-film approximation to calculate the optical conductance and absorption coefficient. The former has a very different energy dependence in the infrared, near-infrared, and visible ranges. The absorption coefficient exhibits a strong power-law dependence on energy with an exponent larger than three in the mid-infrared and near-infrared regions. We have not observed any evidence for a band gap in PtSe2 thin layers down to an energy of 0.4 eV from our optical measurements.

Tuning the orientation of few-layer MoS2 films using one-zone sulfurization.

Few-layer MoS2 films are promising candidates for applications in numerous areas, such as photovoltaics, photocatalysis, nanotribology, lithium batteries, hydro-desulfurization catalysis and dry lubricants, especially due to their distinctive electronic, optical, and catalytic properties. In general, two alignments of MoS2 layers are possible - the horizontal and the vertical one, having different physicochemical properties. Layers of both orientations are conventionally fabricated by a sulfurization of pre-deposited Mo films. So far, the Mo thickness was considered as a critical parameter influencing the final orientation of MoS2 layers with horizontally and vertically aligned MoS2 grown from thin (1 nm) and thick (3 nm) Mo films, respectively. Here, we present a fabrication protocol enabling the growth of horizontally or vertically aligned few-layer MoS2 films utilizing the same Mo thickness of 3 nm. We show that the sulfur vapor is another parameter influencing the growth mechanism, where a sulfurization with higher sulfur vapor pressure leads to vertical MoS2 layers and slow sulfur evaporation results in horizontally aligned layers for a thicker Mo starting layer.