Extremely Shallow Valence Band in Lanthanum Trihydride.

Hydride ions (H-) in solvents are chemically active anions with strong electron-donating ability and are used as reducing agents in organic chemistry. Here, we evaluate the energy level of 1s-electrons in H- accommodated in solid lanthanum hydrides, LaHx (2 ≤ x ≤ 3), by photoemission (ultraviolet photoelectron and photoelectron yield spectroscopies) measurements and density functional theory calculations. We show that a very shallow valance band maximum with an ionization potential of 3.8 eV is attained in LaH3 and that the primary cause is attributed to the small electronegativity of hydrogen and the significant bonding-antibonding interaction between neighboring H-s with a close separation originating from the H-stuffed fluorite-related structure. These results encourage the challenge for p-type conduction in hydride semiconductors and provide a clue to the chemical understanding of polyhydride superconductors.

Room-Temperature Solid-State Synthesis of Cs3Cu2I5 Thin Films and Formation Mechanism for Its Unique Local Structure.

Blue-emitting Cs3Cu2I5 has attracted attention owing to its near-unity PL quantum yield and applications in DUV photodetectors and scintillators. Its PL properties originate from the unique local structure around the luminescent center, the [Cu2I5]3- polyhedron iodocuprate anion consisting of the edge-shared CuI3 triangle and the CuI4 tetrahedron dimer, which is isolated by Cs+ ions. We found that solid-state reactions between CsI and CuI occur near room temperature (RT) to form Cs3Cu2I5 and/or CsCu2I3 phases. High-quality thin films of these phases were obtained by the sequential deposition of CuI and CsI by thermal evaporation. We elucidated that the formation of interstitial Cu+ and the antisite of I- at the Cs+ site in the CsI crystal through Cu+ and I- diffusion results in the RT synthesis of Cs3Cu2I5. The unique structure formation of the luminescent center was revealed using a model based on the low packing density of the CsCl-type crystal structure, similar sizes of Cs+ and I- ions, and the high diffusivity of Cu+. The self-aligned patterning of the luminous regions on thin films was demonstrated.

Superconductivity in an Orbital-Reoriented SnAs Square Lattice: A Case Study of Li0.6 Sn2 As2 and NaSnAs.

Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs3 structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the present work, the functional As square lattice was realized and activated in Li0.6 Sn2 As2 and NaSnAs through a topotactic structural transformation of trigonal SnAs3 to square SnAs4 under pressure, resulting in a record-high Tc among all synthesized SnAs-based compounds. Meanwhile, the conductive channel transfers from the out-of-plane pz orbital to the in-plane px +py orbitals, facilitating electron hopping within the square 2D lattice and boosting the superconductivity. The reorientation of p-orbital following a directed local structure transformation provides an effective strategy to modify layered superconducting systems.

Room-Temperature Fast H- Conduction in Oxygen-Substituted Lanthanum Hydride.

The hydride ion (H-) is a unique anionic species that exhibits high reactivity and chemical energy. H- conductors are key materials to utilize advantages of H- for applications, such as chemical reactors and energy storage systems. However, low H- conductivity at room temperature (RT) in current H- conductors limit their applications. In this study, we report a H- conductivity of ∼1 mS cm-1 at RT, which is higher by 3 orders of magnitude than that of the best conductor, in lightly oxygen-doped lanthanum hydride, LaH3-2xOx with x < 0.25. The oxygen concentration (x) is crucial in achieving fast H- conduction near RT; the low activation barrier of 0.3-0.4 eV is attained for x < 0.25, above which it increases to 1.2-1.3 eV. Molecular dynamics simulations using neural-network potential successfully reproduced the observed activation energy, revealing the presence of mobile and immobile H-.

18-Crown-6 Additive to Enhance Performance and Durability in Solution-Processed Halide Perovskite Electronics.

Recently, an "interlayer" has been often adopted in organic-inorganic hybrid perovskite light-emitting diodes (PeLEDs). The term "interlayer" infers that the layer function is not clear, but it improves electroluminescence (EL) performance. In this respect, it is of interest to determine the exact role of the interlayer and how it works in PeLEDs. In this study, the interlayer is determined to play a crucial role in suppressing the chemical reaction between the metal oxide and hybrid perovskite layers. Nevertheless, the use of an interlayer, a wide gap insulator, does not guarantee the best PeLED performance because it hinders charge injection into the emission layer. Here, a method is proposed that does not apply an "interlayer" but enables simultaneous attainment of high EL performance and outstanding device stability. 18-crown 6-ether (18C6) additive (2.5 mg mL-1 ) is found to fully suppress the chemical reaction between the metal oxide and hybrid perovskite layers. With the 18C6 additive, an 82-fold longer device lifetime and very low operating voltage (3.2 V at 10 000 cd m-2 ) are demonstrated in a PeLED.

Large-moment antiferromagnetic order in overdoped high-Tc superconductor 154SmFeAsO1-x D x.

In iron-based superconductors, high critical temperature (Tc) superconductivity over 50 K has only been accomplished in electron-doped hREFeAsO (hRE is heavy rare earth (RE) element). Although hREFeAsO has the highest bulk Tc (58 K), progress in understanding its physical properties has been relatively slow due to difficulties in achieving high-concentration electron doping and carrying out neutron experiments. Here, we present a systematic neutron powder diffraction study of 154SmFeAsO1-x D x , and the discovery of a long-range antiferromagnetic ordering with x ≥ 0.56 (AFM2) accompanying a structural transition from tetragonal to orthorhombic. Surprisingly, the Fe magnetic moment in AFM2 reaches a magnitude of 2.73 µB/Fe, which is the largest in all nondoped iron pnictides and chalcogenides. Theoretical calculations suggest that the AFM2 phase originates in kinetic frustration of the Fe-3dxy orbital, in which the nearest-neighbor hopping parameter becomes zero. The unique phase diagram, i.e., highest-Tc superconducting phase adjacent to the strongly correlated phase in electron-overdoped regime, yields important clues to the unconventional origins of superconductivity.

Material Design of Green-Light-Emitting Semiconductors: Perovskite-Type Sulfide SrHfS3.

A current issue facing light-emitting devices is a missing suitable material for green emission. To overcome this, we explore semiconductors possessing (i) a deep conduction band minimum (CBM) and a shallow valence band maximum (VBM), (ii) good controllability of electronic conductivity and carrier polarity, and (iii) a directly allowed band gap corresponding to green emission. We focus on early transition metal ( eTM)-based perovskites. The eTM cation's high and stable valence state makes its carrier controllability easy, and the eTM's nonbonding d orbital and the anion's p orbital, which constitute the deep CBM and shallow VBM, are favorable to n- and p-type doping, respectively. To obtain a direct band gap, we applied a scheme that folds the bands constituting the VBM at the zone boundary to the zone center where the CBM appears. Orthorhombic SrHfS3 was chosen as the candidate. The electrical conductivity was tuned from 6 × 10-7 to 7 × 10-1 S·cm-1 with lanthanum (La) doping and to 2 × 10-4 S·cm-1 with phosphorus (P) doping. Simultaneously, the major carrier polarity was controlled to n type by La doping and to p type by P doping. Both the undoped and doped SrHfS3 exhibited intense green photoluminescence (PL) at 2.37 eV. From the PL blue shift and short lifetime, we attributed the emission to a band-to-band transition and/or exciton. These results demonstrate that SrHfS3 is a promising green-light-emitting semiconductor.

Structural Series in the Ternary A-Mn-As System (A = Alkali Metal): Double-Layer-Type CsMn4As3 and RbMn4As3 and Tunnel-Type KMn4As3.

New manganese arsenides CsMn4As3, RbMn4As3, and KMn4As3 were synthesized by solid-state reaction. They consist of edge-sharing MnAs4 tetrahedra, which are a building block similar to those of Fe-based superconductors. CsMn4As3 and RbMn4As3 adopt the KCu4S3-type structure (tetragonal P4/ mmm space group, No. 123) with a Mn4As3 double layer, while KMn4As3 has the CaFe4As3-type structure (orthorhombic Pnma space group, No. 62) with a Mn4As3 tunnel framework. The structural change from CsMn4As3 and RbMn4As3 to KMn4As3 as well as the structural trend of the other ternary A-Mn-As (A = alkali metal) and AE-Mn-As (AE = alkaline-earth metal) compounds is understood as a consequence of reduction of the coordination number around the A and AE sites owing to the decrease of the ionic radius from Cs+ to Mg2+. Electrical resistivity measurements confirm that the three new phases are Mott insulators with band gaps of 0.52 (CsMn4As3), 0.43 (RbMn4As3), and 0.31 eV (KMn4As3). Magnetic and heat capacity measurements revealed that CsMn4As3 and RbMn4As3 are antiferromagnets without apparent phase transitions below 400 K, which is similar to the magnetism of LaMnAsO and BaMn2As2, while the existence of the ferromagnetic component was indicated in KMn4As3 with a magnetic transition at 179 K.

Chemical Design and Example of Transparent Bipolar Semiconductors.

Transparent bipolar semiconductors (TBSCs) are in demand for transparent electronics to serve as the basis for next generation optoelectronic devices. However, the poor carrier controllability in wide-bandgap materials makes the realization of a bipolar nature difficult. Only two materials, CuInO2 and SnO, have been reported as TBSCs. To satisfy demand for the coexistence of transparency and bipolarity, we propose a design concept with three strategies; choice of early transition metals (eTM) such as Y3+ and Zr4+ for improving controllability of carrier doping, design of chemical bonds to obtain an appropriate band structure for bipolar doping, and use of a forbidden band-edge transition to retain transparency. This approach is verified through a practical examination of a candidate material, tetragonal ZrOS, which is chosen by following the criteria. ZrOS exhibits an excellent controllability of the electrical conductivity (10-7-10-2 S cm-1), p- or n-type nature with ∼10-2 S cm-1 by Y or F doping, respectively, and optically wide gap (below 10-4 cm-1 up to ∼2.5 eV). This concept provides a new kind of TBSC based on eTM ionic compounds.

Formation and Characterization of Hydrogen Boride Sheets Derived from MgB2 by Cation Exchange.

Two-dimensional (2D) materials are promising for applications in a wide range of fields because of their unique properties. Hydrogen boride sheets, a new 2D material recently predicted from theory, exhibit intriguing electronic and mechanical properties as well as hydrogen storage capacity. Here, we report the experimental realization of 2D hydrogen boride sheets with an empirical formula of H1B1, produced by exfoliation and complete ion-exchange between protons and magnesium cations in magnesium diboride (MgB2) with an average yield of 42.3% at room temperature. The sheets feature an sp2-bonded boron planar structure without any long-range order. A hexagonal boron network with bridge hydrogens is suggested as the possible local structure, where the absence of long-range order was ascribed to the presence of three different anisotropic domains originating from the 2-fold symmetry of the hydrogen positions against the 6-fold symmetry of the boron networks, based on X-ray diffraction, X-ray atomic pair distribution functions, electron diffraction, transmission electron microscopy, photo absorption, core-level binding energy data, infrared absorption, electron energy loss spectroscopy, and density functional theory calculations. The established cation-exchange method for metal diboride opens new avenues for the mass production of several types of boron-based 2D materials by countercation selection and functionalization.

Ferrimagnetic Cage Framework in Ca12Fe10Si4O32Cl6.

The positively charged cage framework of the natural mineral mayenite, which enables various species with negative charge to be stabilized, is one of the key structures to provide the new functionalities exploited in applications. Here we report the structural and magnetic properties of recently found eltyubyuite, Ca12Fe10Si4O32Cl6, which is the first compound bearing a transition metal oxide as a main constituent in the mayenite-type structure. From neutron powder diffraction measurements at T = 20 K and the low temperature Mössbauer measurement, we determined the magnetic structure of eltyubyuite to be a ferrimagnet with oppositely aligned magnetic moments of +3.17(3) and -3.05(8) µB in two tetrahedral Fe sites with different oxygen ligands, all bridging oxygens or mixed bridging and nonbridging oxygens. As far as is known, this result is likely to be a first example showing ferrimagnetism stemming from only tetrahedral Fe3+ ions. The reduced magnetic moment per Fe3+ and the resultant small net moment per unit cell of 22 µB at µ0H = 5 T and T = 15 K are attributed to strong covalency in much shorter Fe-O bonds in the FeO4 tetrahedra.

Hydrogen-Substituted Superconductors SmFeAsO(1-x)Hx Misidentified As Oxygen-Deficient SmFeAsO(1-x).

We investigated the preferred electron dopants at the oxygen sites of 1111-type SmFeAsO by changing the atmospheres around the precursor with the composition of Sm:Fe:As:O = 1:1:1:1 - x in high-pressure synthesis. Under H2O and H2 atmospheres, hydrogens derived from H2O or H2 molecules were introduced into the oxygen sites as a hydride ion, and SmFeAsO(1-x)Hx was obtained. However, when the H2O and H2 sources were removed from the synthetic process, nearly stoichiometric SmFeAsO was obtained and the maximum amount of oxygen vacancies introduced remained x = 0.05(4). Density functional theory calculations indicated that substitution of hydrogen in the form of H(-) is more stable than the formation of an oxygen vacancy at the oxygen site of SmFeAsO. These results strongly imply that oxygen-deficient SmFeAsO(1-x) reported previously is SmFeAsO(1-x)Hx with hydride ion incorporated unintentionally during high-pressure synthesis.

Model of the electronic structure of electron-doped iron-based superconductors: evidence for enhanced spin fluctuations by diagonal electron hopping.

We present a theoretical understanding of the superconducting phase diagram of the electron-doped iron pnictides. We show that, besides the Fermi surface nesting, a peculiar motion of electrons, where the next nearest neighbor (diagonal) hoppings between iron sites dominate over the nearest neighbor ones, plays an important role in the enhancement of the spin fluctuation and thus superconductivity. In the highest T(c) materials, the crossover between the Fermi surface nesting and this "prioritized diagonal motion" regime occurs smoothly with doping, while in relatively low T(c) materials, the two regimes are separated and therefore results in a double dome T(c) phase diagram.

Hole Concentration Reduction in CuI by Zn Substitution and its Mechanism: Toward Device Applications.

Copper iodide (CuI) is a promising p-type transparent semiconductor with excellent carrier mobility. However, the high hole concentration in conventionally fabricated CuI including the single crystal hinders its applicability to the channel layer of thin-film transistors. We found that Zn substitution into Cu+ sites can effectively reduce the hole concentration. Experimental and computational examinations showed that the dominant mechanism involved the formation of a defect pair, the Zn-substituted Cu site (ZnCu) and Cu vacancy (VCu), and the simultaneous suppression of VCu arising from the stabilization of Cu+ in the Zn-substituted CuI lattice, rather than hole compensation by the electrons generated from Zn2+ substitution into Cu+ sites. Our results show that the hole concentration of Zn-substituted CuI is tunable in the range of 1014-1018 cm-3, making it suitable for thin-film transistors and hole transport layers in OLEDs.

Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction.

Resistive switching induced by ion migration is promising for applications such as random-access memory (ReRAM) and neuromorphic transistors. Hydride ions (H-) are an interesting candidate as the migration ion for resistive switching devices because they have fast diffusion in several compounds at room temperature and doping/dedoping can be used effectively to achieve significant changes in the electronic conductivity. Here, we report reversible resistive switching characteristics in rare-earth oxyhydrides (REHxO(3-x)/2) induced by field insertion/extraction of H-. The current-voltage measurements revealed that the resistive switching response, hysteresis, and switching voltage vary greatly with the H-/O2- ratio in the films. We fabricated a ReRAM device using Ti/YH1.3O0.85/MoOx structure and confirmed the bipolar-type operation with the resistance switching ratio of 1 order of magnitude over 1000 cycles. The composition gradient of H-/O2- in YHxO(3-x)/2 films, in addition to the hydrogen-absorbing ability of the top electrode, is essential for effective device operation. Our findings show that hydride-conducting solid-state electrolytes are suitable for resistive switching device development.

High-Performance P-Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D-3D Core-Shell Structure.

Metal halide perovskites (MHPs) are plausible candidates for practical p-type semiconductors. However, in thin film transistor (TFT) applications, both 2D PEA2 SnI4 and 3D FASnI3 MHPs have different drawbacks. In 2D MHP, the TFT mobility is seriously reduced by grain-boundary issues, whereas 3D MHP has an uncontrollably high hole density, which results in quite a large threshold voltage (Vth ). To overcome these problems, a new concept based on a 2D-3D core-shell structure is herein proposed. In the proposed structure, a 3D MHP core is fully isolated by a 2D MHP, providing two desirable effects as follows. (i) Vth can be independently controlled by the 2D component, and (ii) the grain-boundary resistance is significantly improved by the 2D/3D interface. Moreover, SnF2 additives are used, and they facilitate the formation of the 2D/3D core-shell structure. Consequently, a high-performance p-type Sn-based MHP TFT with a field-effect mobility of ≈25 cm2 V-1 s-1 is obtained. The voltage gain of a complementary metal oxide semiconductor (CMOS) inverter comprising an n-channel InGaZnOx TFT and a p-channel Sn-MHP TFT is ≈200 V/V at VDD = 20 V. Overall, the proposed 2D/3D core-shell structure is expected to provide a new route for obtaining high-performance MHP TFTs.

Electronic and crystal structures ofLnFeAsO1-xHx(Ln= La, Sm) studied by x-ray absorption spectroscopy, x-ray emission spectroscopy, and x-ray diffraction: II pressure dependence.

We examine electronic and crystal structures of iron-based superconductorsLnFeAsO1-xHx(Ln= La, Sm) under pressure by means of x-ray absorption spectroscopy (XAS), x-ray emission spectroscopy (XES), and x-ray diffraction. In LaFeAsO the pre-edge peak on high-resolution XAS at the Fe-Kabsorption edge gains in intensity on the application of pressure up to 5.7 GPa and it saturates in the higher pressure region. We found integrated-absolute difference values on XES forLn= La, corresponding to a spin state, decline on the application of pressure, and then it is minimized when theTcapproaches the maximum at around 5 GPa. In contrast, such the optimum value was not detected forLn= Sm. We reveal that the superconductivity is closely related to the lower spin state forLn= La unlike Sm case. We observed that As height from the Fe basal plane and As-Fe-As angle on the FeAs4tetrahedron forLn= La deviate from the optimum values of the regular tetrahedron in superconducting (SC) phase, which has been widely accepted structural guide to SC thus far. In contrast, the structural parameters were held near the optimum values up to ∼15 GPa forLn= Sm.

Electronic and crystal structures ofLnFeAsO1-xHx(Ln= La, Sm) studied by x-ray absorption spectroscopy, x-ray emission spectroscopy, and x-ray diffraction (part I: carrier-doping dependence).

A carrier doping by a hydrogen substitution in LaFeAsO1-xHxis known to cause two superconducting (SC) domes with the magnetic order at both end sides of the doping. In contrast, SmFeAsO1-xHxhas a similar phase diagram but shows single SC dome. Here, we investigated the electronic and crystal structures for iron oxynitrideLnFeAsO1-xHx(Ln= La, Sm) with the range ofx= 0-0.5 by using x-ray absorption spectroscopy, x-ray emission spectroscopy, and x-ray diffraction. For both compounds, we observed that the pre-edge peaks of x-ray absorption spectra near the Fe-Kedge were reduced in intensity on doping. The character arises from the weaker As-Fe hybridization with the longer As-Fe distance in the higher doped region. We can reproduce the spectra near the Fe-Kedge according to the Anderson impurity model with realistic valence structures using the local-density approximation (LDA) plus dynamical mean-field theory (DMFT). ForLn= Sm, the integrated-absolute difference (IAD) analysis from x-ray Fe-Kßemission spectra increases significantly. This is attributed to the enhancement of magnetic moment of Fe 3delectrons stemming from the localized picture in the higher doped region. A theoretical simulation implementing the self-consistent vertex-correction method reveals that the single dome superconducting phase forLn= Sm arises from a better nesting condition in comparison withLn= La.

Anomalous Charge State Evolution and Its Control of Superconductivity in M3Al2C (M = Mo, W).

The charge states of elements dictate the behavior of electrons and phonons in a lattice, either directly or indirectly. Here, we report the discovery of an anomalous charge state evolution in the superconducting M3Al2C (M = Mo, W) system, where electron doping can be achieved through "oxidation." Specifically, with the continuous removal of electron donor (Al) from the structure, we found an electron doping effect in the negatively charged transition metals. Over a certain threshold, the charge state of transition metals goes through a sudden reversion from negative to positive, which leads to a subsequent structure collapse. Concomitantly, the previous robust superconducting transition temperatures (Tcs) can be flexibly modulated. Detailed analysis reveals the origin of the superconductivity and the intimate relationship between the charge state and the electron-phonon coupling constant. The peculiar charge state in M3Al2C plays an important role in both its structure and superconductivity.

Characteristic fast H- ion conduction in oxygen-substituted lanthanum hydride.

Fast ionic conductors have considerable potential to enable technological development for energy storage and conversion. Hydride (H-) ions are a unique species because of their natural abundance, light mass, and large polarizability. Herein, we investigate characteristic H- conduction, i.e., fast ionic conduction controlled by a pre-exponential factor. Oxygen-doped LaH3 (LaH3-2xOx) has an optimum ionic conductivity of 2.6 × 10-2 S cm-1, which to the best of our knowledge is the highest H- conductivity reported to date at intermediate temperatures. With increasing oxygen content, the relatively high activation energy remains unchanged, whereas the pre-exponential factor decreases dramatically. This extraordinarily large pre-exponential factor is explained by introducing temperature-dependent enthalpy, derived from H- trapped by lanthanum ions bonded to oxygen ions. Consequently, light mass and large polarizability of H-, and the framework comprising densely packed H- in LaH3-2xOx are crucial factors that impose significant temperature dependence on the potential energy and implement characteristic fast H- conduction.