1.
J Chem Phys
; 126(5): 054708, 2007 Feb 07.
Artigo
em Inglês
| MEDLINE
| ID: mdl-17302499
RESUMO
The authors studied the photoelectrochemical properties dependent on carrier concentration of n-type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7x10(17) cm-3. Using the sample optimized carrier concentration, the authors achieved H2 gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.