Wavelet analysis for single molecule localization microscopy.

Localization of single molecules in microscopy images is a key step in quantitative single particle data analysis. Among them, single molecule based super-resolution optical microscopy techniques require high localization accuracy as well as computation of large data sets in the order of 10(5) single molecule detections to reconstruct a single image. We hereby present an algorithm based on image wavelet segmentation and single particle centroid determination, and compare its performance with the commonly used gaussian fitting of the point spread function. We performed realistic simulations at different signal-to-noise ratios and particle densities and show that the calculation time using the wavelet approach can be more than one order of magnitude faster than that of gaussian fitting without a significant degradation of the localization accuracy, from 1 nm to 4 nm in our range of study. We propose a simulation-based estimate of the resolution of an experimental single molecule acquisition.

Donor-state-enabling Er-related luminescence in silicon: direct identification and resonant excitation.

We conclusively establish a direct link between formation of an Er-related donor gap state and the 1.5 microm emission of Er in Si. The experiment is performed on Si/Si:Er nanolayers where a single type of Er optical center dominates. We show that the Er emission can be resonantly induced by direct pumping into the bound exciton state of the identified donor. Using two-color spectroscopy with a free-electron laser we determine the ionization energy of the donor-state-enabling Er excitation as E(D) approximately 218 meV. We demonstrate quenching of the Er-related emission upon ionization of the donor.

Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals.

We report on an observation of a fast 1.5 microm photoluminescence band from Er3+ ions embedded in an SiO2 matrix doped with Si nanocrystals, which appears and decays within the first microsecond after the laser excitation pulse. We argue that the fast excitation and quenching are facilitated by Auger processes related to transitions of confined electrons or holes between the space-quantized levels of Si nanocrystals dispersed in SiO2. We show that a great part--about 50%--of all Er dopants is involved in these fast processes and contributes to the submicrosecond emission.

Isotope dependence of the lifetime of the vibration of oxygen in silicon.

By simply changing the isotopes of the Si atoms that neighbor an oxygen Oi atom in crystalline silicon, the measured decay rate tau of the asymmetric-stretch vibration (nu3=1136 cm-1) of oxygen (Oi) in silicon changes by a factor of approximately 2.5. These data establish that nu3 decays by creating one nu1 symmetric-stretch, local-vibrational mode of the Si-Oi-Si structure. If the residual energy (nu3-nu1) is less than the maximum frequency num of the host lattice, as for 28Si-16O-28Si in natural silicon, then it is emitted as one lattice mode, and tau depends on the density of one-phonon states at nu3-nu1. If (nu3-nu1)>num, as for 16O in single-isotope 30Si silicon, two lattice modes are created in addition to nu1, increasing tau. Prediction of tau for a particular defect clearly requires a detailed knowledge of that defect.