Mixed-Dimensional In-Plane Heterostructures from 1D Mo6 Te6 and 2D MoTe2 Synthesized by Te-Flux-Controlled Chemical Vapor Deposition.

Mixed-dimensional van der Waals heterostructures are scientifically important and practically useful because of their interesting exotic properties resulting from their novel hybrid structures. This study reports the composition- and phase-selective fabrication of low-dimensional molybdenum/tellurium (Mo/Te) compounds and the direct synthesis of mixed-dimensional in-plane 1D-2D Mo6 Te6 -MoTe2 heterostructures. The composition and phase of the Mo/Te compounds are controlled by changing the Te atomic flux that is adjusted by the Te temperature. Metallic 1D Mo6 Te6 wires with an intrinsic 1D structure with a diameter of 3-8 nm and length of 100-300 nm are synthesized to form wire networks under low Te flux conditions, whereas the semiconducting few-layer 2H MoTe2 films preferentially oriented along the <0001> direction are obtained under high Te flux. Under medium Te flux, the mixed-dimensional in-plane 1D-2D Mo6 Te6 -MoTe2 heterostructures are synthesized in which the semiconducting few-layer 2H MoTe2 circular domains are edge-contacted by the metallic 1D Mo6 Te6 wire networks. Furthermore, the present Te-flux-controlled method reveals that the 1D Mo6 Te6 networks change to few-layer MoTe2 films as the Te flux increases. The in-plane 1D-2D Mo6 Te6 -MoTe2 heterostructures synthesized by this method can be considered as advanced edge-contacted 2D semiconductors for high-performance 2D electronics.

Field Effect Modulation of Heterogeneous Charge Transfer Kinetics at Back-Gated Two-Dimensional MoS2 Electrodes.

The ability to improve and to modulate the heterogeneous charge transfer kinetics of two-dimensional (2D) semiconductors, such as MoS2, is a major challenge for electrochemical and photoelectrochemical applications of these materials. Here we report a continuous and reversible physical method for modulating the heterogeneous charge transfer kinetics at a monolayer MoS2 working electrode supported on a SiO2/p-Si substrate. The heavily doped p-Si substrate serves as a back gate electrode; application of a gate voltage (VBG) to p-Si tunes the electron occupation in the MoS2 conduction band and shifts the conduction band edge position relative to redox species dissolved in electrolyte in contact with the front side of the MoS2. The gate modulation of both charge density and energy band alignment impacts charge transfer kinetics as measured by cyclic voltammetry (CV). Specifically, cyclic voltammograms combined with numerical simulations suggest that the standard heterogeneous charge transfer rate constant (k0) for MoS2 in contact with the ferrocene/ferrocenium (Fc0/+) redox couple can be modulated by over 2 orders of magnitude from 4 × 10-6 to 1 × 10-3 cm/s, by varying VBG. In general, the field effect offers the potential to tune the electrochemical properties of 2D semiconductors, opening up new possibilities for fundamental studies of the relationship between charge transfer kinetics and independently controlled electronic band alignment and band occupation.

Seed Crystal Homogeneity Controls Lateral and Vertical Heteroepitaxy of Monolayer MoS2 and WS2.

Heteroepitaxy between transition-metal dichalcogenide (TMDC) monolayers can fabricate atomically thin semiconductor heterojunctions without interfacial contamination, which are essential for next-generation electronics and optoelectronics. Here we report a controllable two-step chemical vapor deposition (CVD) process for lateral and vertical heteroepitaxy between monolayer WS2 and MoS2 on a c-cut sapphire substrate. Lateral and vertical heteroepitaxy can be selectively achieved by carefully controlling the growth of MoS2 monolayers that are used as two-dimensional (2D) seed crystals. Using hydrogen as a carrier gas, we synthesize ultraclean MoS2 monolayers, which enable lateral heteroepitaxial growth of monolayer WS2 from the MoS2 edges to create atomically coherent and sharp in-plane WS2/MoS2 heterojunctions. When no hydrogen is used, we obtain MoS2 monolayers decorated with small particles along the edges, inducing vertical heteroepitaxial growth of monolayer WS2 on top of the MoS2 to form vertical WS2/MoS2 heterojunctions. Our lateral and vertical atomic layer heteroepitaxy steered by seed defect engineering opens up a new route toward atomically controlled fabrication of 2D heterojunction architectures.

Atomic covalent functionalization of graphene.

Although graphene's physical structure is a single atom thick, two-dimensional, hexagonal crystal of sp(2) bonded carbon, this simple description belies the myriad interesting and complex physical properties attributed to this fascinating material. Because of its unusual electronic structure and superlative properties, graphene serves as a leading candidate for many next generation technologies including high frequency electronics, broadband photodetectors, biological and gas sensors, and transparent conductive coatings. Despite this promise, researchers could apply graphene more routinely in real-world technologies if they could chemically adjust graphene's electronic properties. For example, the covalent modification of graphene to create a band gap comparable to silicon (∼1 eV) would enable its use in digital electronics, and larger band gaps would provide new opportunities for graphene-based photonics. Toward this end, researchers have focused considerable effort on the chemical functionalization of graphene. Due to its high thermodynamic stability and chemical inertness, new methods and techniques are required to create covalent bonds without promoting undesirable side reactions or irreversible damage to the underlying carbon lattice. In this Account, we review and discuss recent theoretical and experimental work studying covalent modifications to graphene using gas phase atomic radicals. Atomic radicals have sufficient energy to overcome the kinetic and thermodynamic barriers associated with covalent reactions on the basal plane of graphene but lack the energy required to break the C-C sigma bonds that would destroy the carbon lattice. Furthermore, because they are atomic species, radicals substantially reduce the likelihood of unwanted side reactions that confound other covalent chemistries. Overall, these methods based on atomic radicals show promise for the homogeneous functionalization of graphene and the production of new classes of two-dimensional materials with fundamentally different electronic and physical properties. Specifically, we focus on recent studies of the addition of atomic hydrogen, fluorine, and oxygen to the basal plane of graphene. In each of these reactions, a high energy, activating step initiates the process, breaking the local π structure and distorting the surrounding lattice. Scanning tunneling microscopy experiments reveal that substrate mediated interactions often dominate when the initial binding event occurs. We then compare these substrate effects with the results of theoretical studies that typically assume a vacuum environment. As the surface coverage increases, clusters often form around the initial distortion, and the stoichiometric composition of the saturated end product depends strongly on both the substrate and reactant species. In addition to these chemical and structural observations, we review how covalent modification can extend the range of physical properties that are achievable in two-dimensional materials.

Quantitatively enhanced reliability and uniformity of high-κ dielectrics on graphene enabled by self-assembled seeding layers.

The full potential of graphene in integrated circuits can only be realized with a reliable ultrathin high-κ top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular, vertically heterogeneous and laterally homogeneous Al2O3 and HfO2 stacks grown via atomic-layer deposition and seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride organic monolayer exhibit high uniformities (Weibull shape parameter ß > 25) and large breakdown strengths (Weibull scale parameter, E(BD) > 7 MV/cm) that are comparable to control dielectrics grown on Si substrates.

Templating sub-10 nm atomic layer deposited oxide nanostructures on graphene via one-dimensional organic self-assembled monolayers.

Molecular-scale control over the integration of disparate materials on graphene is a critical step in the development of graphene-based electronics and sensors. Here, we report that self-assembled monolayers of 10,12-pentacosadiynoic acid (PCDA) on epitaxial graphene can be used to template the reaction and directed growth of atomic layer deposited (ALD) oxide nanostructures with sub-10 nm lateral resolution. PCDA spontaneously assembles into well-ordered domains consisting of one-dimensional molecular chains that coat the entire graphene surface in a manner consistent with the symmetry of the underlying graphene lattice. Subsequently, zinc oxide and alumina ALD precursors are shown to preferentially react with the functional moieties of PCDA, resulting in templated oxide nanostructures. The retention of the original one-dimensional molecular ordering following ALD is dependent on the chemical reaction pathway and the stability of the monolayer, which can be enhanced via ultraviolet-induced molecular cross-linking.

Femtosecond electron solvation at the ionic liquid/metal electrode interface.

Electron solvation is examined at the interface of a room temperature ionic liquid (RTIL) and an Ag(111) electrode. Femtosecond two-photon photoemission spectroscopy is used to inject an electron into an ultrathin film of RTIL 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide ([Bmpyr](+)[NTf2](-)). While much of current literature highlights slower nanosecond solvation mechanisms in bulk ionic liquids, we observe only a femtosecond response, supporting morphology dependent and interface specific electron solvation mechanisms. The injected excess electron is found to reside in an electron affinity level residing near the metal surface. Population of this state decays back to the metal with a time constant of 400 ± 150 fs. Electron solvation is measured as a dynamic decrease in the energy with a time constant of 350 ± 150 fs. We observe two distinct temperature regimes, with a critical temperature near 250 K. The low temperature regime is characterized by a higher work function of 4.41 eV, while the high temperature regime is characterized by a lower work function of 4.19 eV. The total reorganizational energy of solvation changes above and below the critical temperature. In the high temperature regime, the electron affinity level solvates by 540 meV at 350 K, and below the critical temperature, solvation decreases to 200 meV at 130 K. This study will provide valuable insight to interface specific solvation of room temperature ionic liquids.

Metal oxide nanoparticle growth on graphene via chemical activation with atomic oxygen.

Chemically interfacing the inert basal plane of graphene with other materials has limited the development of graphene-based catalysts, composite materials, and devices. Here, we overcome this limitation by chemically activating epitaxial graphene on SiC(0001) using atomic oxygen. Atomic oxygen produces epoxide groups on graphene, which act as reactive nucleation sites for zinc oxide nanoparticle growth using the atomic layer deposition precursor diethyl zinc. In particular, exposure of epoxidized graphene to diethyl zinc abstracts oxygen, creating mobile species that diffuse on the surface to form metal oxide clusters. This mechanism is corroborated with a combination of scanning probe microscopy, Raman spectroscopy, and density functional theory and can likely be generalized to a wide variety of related surface reactions on graphene.

Conformational isomerization kinetics of pent-1-en-4-yne with 3,330 cm-1 of internal energy measured by dynamic rotational spectroscopy.

We demonstrate the application of molecular rotational spectroscopy to measure the conformation isomerization rate of vibrationally excited pent-1-en-4-yne (pentenyne). The rotational spectra of single quantum states of pentenyne are acquired by using a combination of IR-Fourier transform microwave double-resonance spectroscopy and high-resolution, single-photon IR spectroscopy. The quantum states probed in these experiments have energy eigenvalues of approximately 3,330 cm(-1) and lie above the barrier to conformational isomerization. At this energy, the presence of intramolecular vibrational energy redistribution (IVR) is indicated through the extensive local perturbations found in the high-resolution rotation-vibration spectrum of the acetylenic C-H stretch normal-mode fundamental. The fact that the IVR process produces isomerization is deduced through a qualitatively different appearance of the excited-state rotational spectra compared with the pure rotational spectra of pentenyne. The rotational spectra of the vibrationally excited molecular eigenstates display coalescence between the characteristic rotational frequencies of the stable cis and skew conformations of the molecule. This coalescence is observed for quantum states prepared from laser excitation originating in the ground vibrational state of either of the two stable conformers. Experimental isomerization rates are extracted by using a three-state Bloch model of the dynamic rotational spectra that includes the effects of chemical exchange between the stable conformations. The time scale for the conformational isomerization rate of pentenyne at total energy of 3,330 cm(-1) is approximately 25 ps and is 50 times slower than the microcanonical isomerization rate predicted by the statistical Rice-Ramsperger-Kassel-Marcus theory.

The origin of charge localization observed in organic photovoltaic materials.

Two of the primary hurdles facing organic electronics and photovoltaics are their low charge mobility and the inability to disentangle morphological and molecular effects on charge transport. Specific chemical groups such as alkyl side chains are often added to enable spin-casting and to improve overall power efficiency and morphologies, but their exact influence on mobility is poorly understood. Here, we use two-photon photoemission spectroscopy to study the charge transport properties of two organic semiconductors, one with and one without alkyl substituents (sexithiophene and dihexyl-sexithiophene). We show that the hydrocarbon side chains are responsible for charge localization within 230 fs. This implies that other chemical groups should be used instead of alkyl ligands to achieve the highest performance in organic photovoltaics and electronics.

MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering.

The coexistence of metallic and semiconducting polymorphs in transition-metal dichalcogenides (TMDCs) can be utilized to solve the large contact resistance issue in TMDC-based field effect transistors (FETs). A semiconducting hexagonal (2H) molybdenum ditelluride (MoTe2) phase, metallic monoclinic (1T') MoTe2 phase, and their lateral homojunctions can be selectively synthesized in situ by chemical vapor deposition due to the small free energy difference between the two phases. Here, we have investigated, in detail, the structural and electrical properties of in situ-grown lateral 2H/1T' MoTe2 homojunctions grown using flux-controlled phase engineering. Using atomic-resolution plan-view and cross-sectional transmission electron microscopy analyses, we show that the round regions of near-single-crystalline 2H-MoTe2 grow out of a polycrystalline 1T'-MoTe2 matrix. We further demonstrate the operation of MoTe2 FETs made on these in situ-grown lateral homojunctions with 1T' contacts. The use of a 1T' phase as electrodes in MoTe2 FETs effectively improves the device performance by substantially decreasing the contact resistance. The contact resistance of 1T' electrodes extracted from transfer length method measurements is 470 ± 30 Ω·µm. Temperature- and gate-voltage-dependent transport characteristics reveal a flat-band barrier height of ∼30 ± 10 meV at the lateral 2H/1T' interface that is several times smaller and shows a stronger gate modulation, compared to the metal/2H Schottky barrier height. The information learned from this analysis will be critical to understanding the properties of MoTe2 homojunction FETs for use in memory and logic circuity applications.

Aligned MoO2/MoS2 and MoO2/MoTe2 Freestanding Core/Shell Nanoplates Driven by Surface Interactions.

Controlling the growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is an important step toward utilizing these materials for either electronics or catalysis. Here, we report a new surface-templated growth method that enables the fabrication of MoO2/MoS2 and MoO2/MoTe2 core/shell nanoplates epitaxially aligned on (0001)-oriented 4H-silicon carbide and sapphire substrates. These heterostructures are characterized by a variety of techniques to identify the chemical and structural nature of the interface. Scanning electron microscopy shows that the nanoplates feature 3-fold symmetry indicative of epitaxial growth. Raman spectroscopy indicates that the MoO2/MoS2 nanoplates are composed of co-localized MoO2 and MoS2, and transmission electron microscopy confirms that the nanoplates feature MoO2 cores with 2D MoS2 coatings. Locked-coupled X-ray diffraction shows that the interfacial planes of the MoO2 nanoplate cores belong to the {010} and {001} families. This method may be further generalized to create novel nanostructured interfaces with single-crystal substrates.

In-Plane 2H-1T' MoTe2 Homojunctions Synthesized by Flux-Controlled Phase Engineering.

The fabrication of in-plane 2H-1T' MoTe2 homojunctions by the flux-controlled, phase-engineering of few-layer MoTe2 from Mo nanoislands is reported. The phase of few-layer MoTe2 is controlled by simply changing Te atomic flux controlled by the temperature of the reaction vessel. Few-layer 2H MoTe2 is formed with high Te flux, while few-layer 1T' MoTe2 is obtained with low Te flux. With medium flux, few-layer in-plane 2H-1T' MoTe2 homojunctions are synthesized. As-synthesized MoTe2 is characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. Kelvin probe force microscopy and Raman mapping confirm that in-plane 2H-1T' MoTe2 homojunctions have abrupt interfaces between 2H and 1T' MoTe2 domains, possessing a potential difference of about 100 mV. It is further shown that this method can be extended to create patterned metal-semiconductor junctions in MoTe2 in a two-step lithographic synthesis. The flux-controlled phase engineering method could be utilized for the large-scale controlled fabrication of 2D metal-semiconductor junctions for next-generation electronic and optoelectronic devices.

Probing the Structure and Chemistry of Perylenetetracarboxylic Dianhydride on Graphene Before and After Atomic Layer Deposition of Alumina.

The superlative electronic properties of graphene suggest its use as the foundation of next generation integrated circuits. However, this application requires precise control of the interface between graphene and other materials, especially the metal oxides that are commonly used as gate dielectrics. Towards that end, organic seeding layers have been empirically shown to seed ultrathin dielectric growth on graphene via atomic layer deposition (ALD), although the underlying chemical mechanisms and structural details of the molecule/dielectric interface remain unknown. Here, confocal resonance Raman spectroscopy is employed to quantify the structure and chemistry of monolayers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on graphene before and after deposition of alumina with the ALD precursors trimethyl aluminum (TMA) and water. Photoluminescence measurements provide further insight into the details of the growth mechanism, including the transition between layer-by-layer growth and island formation. Overall, these results reveal that PTCDA is not consumed during ALD, thereby preserving a well-defined and passivating organic interface between graphene and deposited dielectric thin films.

Chemically homogeneous and thermally reversible oxidation of epitaxial graphene.

With its exceptional charge mobility, graphene holds great promise for applications in next-generation electronics. In an effort to tailor its properties and interfacial characteristics, the chemical functionalization of graphene is being actively pursued. The oxidation of graphene via the Hummers method is most widely used in current studies, although the chemical inhomogeneity and irreversibility of the resulting graphene oxide compromises its use in high-performance devices. Here, we present an alternative approach for oxidizing epitaxial graphene using atomic oxygen in ultrahigh vacuum. Atomic-resolution characterization with scanning tunnelling microscopy is quantitatively compared to density functional theory, showing that ultrahigh-vacuum oxidization results in uniform epoxy functionalization. Furthermore, this oxidation is shown to be fully reversible at temperatures as low as 260 °C using scanning tunnelling microscopy and spectroscopic techniques. In this manner, ultrahigh-vacuum oxidation overcomes the limitations of Hummers-method graphene oxide, thus creating new opportunities for the study and application of chemically functionalized graphene.

Motional narrowing of the rotational spectrum of trifluoropropyne at 6550 cm(-1) by intramolecular vibrational energy redistribution.

We present the basic principles of dynamic rotational spectroscopy for the highly vibrationally excited symmetric top molecule trifluoropropyne (TFP,CF3CCH). Single molecular eigenstate rotational spectra of TFP were recorded in the region of the first overtone of the nu(1) acetylenic stretching mode at 6550 cm(-1) by infrared-pulsed microwave-Fourier transform microwave triple resonance spectroscopy. The average rotational constant (B) of the highly vibrationally mixed quantum states at 6550 cm(-1) is 2909.33 MHz, a value that is 40 MHz larger than the rotational constant expected for the unperturbed C-H stretch overtone (2869.39 MHz). The average rotational constant and rotational line shape of the molecular eigenstate rotational spectra are compared to the distribution of rotational constants expected for the ensemble of normal-mode vibrational states at 6550 cm(-1) that can interact by intramolecular vibrational energy redistribution (IVR). The normal-mode population distribution at 6550 cm(-1) can be described using a Boltzmann distribution with a microcanonical temperature of 1200 K. At this energy the rotational constant distribution in the normal-mode basis set is peaked at about 2910 MHz with a width of about 230 MHz. The distribution is slightly asymmetric with a tail to the high end. The experimentally measured dynamic rotational spectra are centered at the normal-mode distribution peak; however, the spectral width is significantly narrower (40 MHz) than normal-mode ensemble width (230 MHz). This reduction of the width, along with the Lorentzian shape of the eigenstate rotational spectra when compared to the Gaussian shape of the calculated ensemble distribution, illustrates the narrowing of the spectrum due to IVR exchange. The IVR exchange rate was determined to be 120 ps, about ten times faster than the rate at which energy is redistributed from the v=2 level of the acetylenic stretch.