Author Correction: Electrically pumped photonic integrated soliton microcomb.

The original version of this Article contained an error in the first sentence of the Acknowledgements, which incorrectly read 'This publication was supported by Contract HR0011-15-C-0055 (DODOS) from the Defense Advanced Research Projects Agency (DARPA), Defense Sciences Office (DSO).' The correct version states 'Microsystems Technology Office (MTO)' in place of 'Defense Sciences Office (DSO)'. This has been corrected in both the PDF and HTML versions of the Article.

Electrically pumped photonic integrated soliton microcomb.

Microcombs provide a path to broad-bandwidth integrated frequency combs with low power consumption, which are compatible with wafer-scale fabrication. Yet, electrically-driven, photonic chip-based microcombs are inhibited by the required high threshold power and the frequency agility of the laser for soliton initiation. Here we demonstrate an electrically-driven soliton microcomb by coupling a III-V-material-based (indium phosphide) multiple-longitudinal-mode laser diode chip to a high-Q silicon nitride microresonator fabricated using the photonic Damascene process. The laser diode is self-injection locked to the microresonator, which is accompanied by the narrowing of the laser linewidth, and the simultaneous formation of dissipative Kerr solitons. By tuning the laser diode current, we observe transitions from modulation instability, breather solitons, to single-soliton states. The system operating at an electronically-detectable sub-100-GHz mode spacing requires less than 1 Watt of electrical power, can fit in a volume of ca. 1 cm3, and does not require on-chip filters and heaters, thus simplifying the integrated microcomb.

Self-referenced photonic chip soliton Kerr frequency comb.

Self-referencing turns pulsed laser systems into self-referenced frequency combs. Such frequency combs allow counting of optical frequencies and have a wide range of applications. The required optical bandwidth to implement self-referencing is typically obtained via nonlinear broadening in optical fibers. Recent advances in the field of Kerr frequency combs have provided a path toward the development of compact frequency comb sources that provide broadband frequency combs, exhibit microwave repetition rates and are compatible with on-chip photonic integration. These devices have the potential to significantly expand the use of frequency combs. Yet to date, self-referencing of such Kerr frequency combs has only been attained by applying conventional, fiber-based broadening techniques. Here we demonstrate external broadening-free self-referencing of a Kerr frequency comb. An optical spectrum spanning two-thirds of an octave is directly synthesized from a continuous wave laser-driven silicon nitride microresonator using temporal dissipative Kerr soliton formation and soliton Cherenkov radiation. Using this coherent bandwidth and two continuous wave transfer lasers in a 2f-3f self-referencing scheme, we are able to detect the offset frequency of the soliton Kerr frequency comb. By stabilizing the repetition rate to a radio frequency reference, the self-referenced frequency comb is used to count and track the continuous wave pump laser's frequency. This work demonstrates the principal ability of soliton Kerr frequency combs to provide microwave-to-optical clockworks on a chip.

Micro-fabricated stylus ion trap.

An electroformed, three-dimensional stylus Paul trap was designed to confine a single atomic ion for use as a sensor to probe the electric-field noise of proximate surfaces. The trap was microfabricated with the UV-LIGA technique to reduce the distance of the ion from the surface of interest. We detail the fabrication process used to produce a 150 µm tall stylus trap with feature sizes of 40 µm. We confined single, laser-cooled, (25)Mg(+) ions with lifetimes greater than 2 h above the stylus trap in an ultra-high-vacuum environment. After cooling a motional mode of the ion at 4 MHz close to its ground state ( = 0.34 ± 0.07), the heating rate of the trap was measured with Raman sideband spectroscopy to be 387 ± 15 quanta/s at an ion height of 62 µm above the stylus electrodes.

Complete methods set for scalable ion trap quantum information processing.

Large-scale quantum information processors must be able to transport and maintain quantum information and repeatedly perform logical operations. Here, we show a combination of all of the fundamental elements required to perform scalable quantum computing through the use of qubits stored in the internal states of trapped atomic ions. We quantified the repeatability of a multiple-qubit operation and observed no loss of performance despite qubit transport over macroscopic distances. Key to these results is the use of different pairs of 9Be+ hyperfine states for robust qubit storage, readout, and gates, and simultaneous trapping of 24Mg+ "re-cooling" ions along with the qubit ions.