An organic transistor for detecting the oxidation of an organic sulfur compound at a solid-liquid interface and its chemical sensing applications.

The development of chemical sensors has advanced due to an increase in demand; however, the potential of chemical sensors as devices to monitor organic reactions has not been revealed yet. Thus, we aim to propose a chemical sensor platform for facile monitoring of chemical reactions, especially at a solid-liquid interface. In this study, an extended-gate-type organic field-effect transistor (OFET) has been employed as a platform to detect chemical reactions at an interface between the extended-gate electrode and an aqueous solution. The OFET device functionalized with 4,4'-thiobisbenzenthiol has shown time- and concentration-dependent shifts in transistor characteristics upon adding H2O2. In a selectivity test using seven oxidant agents, the transistor responses depended on the oxidation of the organic sulfur compound (i.e., 4,4'-thiobisbenzenthiol) stemming from the ability of the oxidant agents. Therefore, the observed changes in the transistor characteristics have suggested the generation of sulfur-oxidized products at the interface. In this regard, the observed responses were caused by disulfide formation accompanied by changes in the charges under neutral pH conditions. Meanwhile, weak transistor responses derived from the generation of oxygen adducts have also been observed, which were caused by changes in the dipole moments. Indeed, the yields of the oxygen adducts have been revealed by X-ray photoelectron spectroscopy. The monitoring of gradual changes originating from the decrease in the disulfide formation and the increase in the oxygen adducts implied a novel aspect of the OFET device as a platform to simultaneously detect reversible and irreversible reactions at interfaces without using large-sized analytical instruments. Sulfur oxidation by H2O2 on the OFET device has been further applied to the indirect monitoring of an enzymatic reaction in solution. The OFET-based chemical sensor has shown continuous changes with an increase in a substance (i.e., lactate) in the presence of an enzyme (i.e., lactate oxidase), which indicates that the OFET response depends on the H2O2 generated through the enzymatic reaction in the solution. In this study, we have clarified the versatility of organic devices as platforms to monitor different chemical reactions using a single detection method.

Effects of A-site Cations in Quadruple Perovskite Ruthenates on Oxygen Evolution Catalysis in Acidic Aqueous Solutions.

The quadruple perovskite ruthenate CaCu3 Ru4 O12 is more active and stable than the benchmark catalyst RuO2 in the oxygen evolution reaction (OER) in acidic aqueous solutions, where many oxide-based catalysts are dissolved. Studies on the crystal structures of quadruple perovskite ruthenates are rare, and the origin of OER activity or stability from a structural aspect has not been clarified in detail. This presents the need to study the effects of cations at the A site of quadruple perovskite ruthenates ACu3 Ru4 O12 (A = Ca, Sr, La, Nd, and Ce) on the OER catalytic activity and stability in acidic aqueous solutions. CaCu3 Ru4 O12 has the highest activity and stability among all quadruple perovskite samples. The type of cation at the A site changes the average Cu and Ru valence states, and the plot of OER activity versus the average Cu valence number shows a volcano-type relationship. In addition, stability increases with a decrease in Ru-O bond length. This research provides a good design principle for OER catalysts with high activity and stability in severely acidic aqueous solutions.

Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

An extended-gate-type organic transistor for monitoring the Menschutkin reaction of tetrazole at a solid-liquid interface.

We herein propose an approach to visualize the Menschutkin reaction at an interface between a self-assembled monolayer with nucleophilic properties and water containing alkyl halides. An organic field-effect transistor functionalized with a nucleophilic monolayer has detected in situ alkylation depending on differences in the leaving group ability and the bulkiness of electrophilic alkyls.

Electrochemical deposition of amorphous cobalt oxides for oxygen evolution catalysis.

The oxygen evolution reaction (OER) is crucial in water splitting for hydrogen production. However, its high over-potential and sluggish kinetics cause an additional energy loss and hinder its practical application. The cobalt spinel oxide Co3O4 exhibits a high catalytic activity for the OER in alkaline solutions. However, the activity requires further enhancement to meet the industrial demand for hydrogen production. This paper presents an electrochemical deposition method to obtain cobalt oxides with a controllable crystallinity on carbon paper (CP). Usually, cobalt oxides grown on CP have a Co3O4 spinel oxide structure. The self-supported Co3O4/CP exhibited a considerable catalytic activity for the OER. When a VS2 layer grown on the CP beforehand by a hydrothermal method was used as substrate, the deposited cobalt oxides were in an amorphous state, denoted as CoO x /VS2/CP, which exhibited a higher OER activity and better stability than those of Co3O4/CP. The enhancement in the catalytic activity was attributed to the mixture formation of different types of cobalt species, including Co3O4, CoO, Co(OH)2, and metallic Co, because of the reduction by VS2. We also clarify the significance of the crystallinity of cobalt oxides in the improvement in the OER activity. This process can also be applied to the direct formation of other types of self-supported oxide electrodes for OER catalysis.

A microfluidic organic transistor for reversible and real-time monitoring of H2O2 at ppb/ppt levels in ultrapure water.

A microfluidic organic transistor functionalized with phenylboronic acid firstly succeeded in reversible and real-time monitoring of H2O2 at ppb/ppt levels in ultrapure water, which would be used not only as portable chemical sensors but also as monitoring tools to clarify unknown reaction mechanisms of phenylboronic acid with H2O2.

Multi-Oxyanion Detection by an Organic Field-Effect Transistor with Pattern Recognition Techniques and Its Application to Quantitative Phosphate Sensing in Human Blood Serum.

We herein report an organic field-effect transistor (OFET) based chemical sensor for multi-oxyanion detection with pattern recognition techniques. The oxyanions ubiquitously play versatile roles in biological systems, and accessing the chemical information they provide would potentially facilitate fundamental research in diagnosis and pharmacology. In this regard, phosphates in human blood serum would be a promising indicator for early case detection of significant diseases. Thus, the development of an easy-to-use chemical sensor for qualitative and quantitative detection of oxyanions is required in real-world scenarios. To this end, an extended-gate-type OFET has been functionalized with a metal complex consisting of 2,2'-dipicolylamine and a copper(II) ion (CuII-dpa), allowing a compact chemical sensor for oxyanion detection. The OFET combined with a uniform CuII-dpa-based self-assembled monolayer (SAM) on the extended-gate gold electrode shows a cross-reactive response, which suggests a discriminatory power for pattern recognition. Indeed, the qualitative detection of 13 oxyanions (i.e., hydrogen monophosphate, pyrophosphate, adenosine monophosphate, adenosine diphosphate, adenosine triphosphate, terephthalate, phthalate, isophthalate, malonate, oxalate, lactate, benzoate, and acetate) has been demonstrated by only using a single OFET-based sensor with linear discriminant analysis, which has shown 100% correct classification. The OFET has been further applied to the quantification of hydrogen monophosphate in human blood serum using a support vector machine (SVM). The multiple predictions of hydrogen monophosphate at 49 and 89 µM have been successfully realized with low errors, which indicates that the OFET-based sensor with pattern recognition techniques would be a practical sensing platform for medical assays. We believe that a combination of the OFET functionalized with the SAM-based recognition scaffold and powerful pattern recognition methods can achieve multi-analyte detection from just a single sensor.

Enhanced Energy Efficiency of Light Grid System with Optimized System Design and Recycling with Thermoelectric Platform.

In this work, a light grid system with a high-power LED chip was manufactured and employed to analyze the energy efficiency of output optical energy. The high-power LED system based on thermoelectric modules, a heat dissipation structure and optical transmission system with an optical fiber were optimally combined and designed, which increased the efficiency of light grid system. Additionally, by introducing an effective design for the heat dissipation structure, the output optical energy and recycled electrical energy were increased. The recycled energy through optimized heat dissipation structure was 1.94 W, and the system efficiency of designed light grid system is more than 50%. In this research, we intensively studied the energy efficiency of a light grid system as well as the recycling of thermal energy through thermoelectric modules.

Improvement of Figure of Merit Pb(Zr,Ti)O3-Pb(Zn,Ni,Nb)O3-Pb(In,Nb)O3 Piezoelectric Ceramics.

Figure of merit the product of piezoelectric charge constant and the piezoelectric voltage constant-d33 × g33 in piezoelectric energy harvesting systems are critical measures in energy harvester applications. It is difficult to achieve high figure of merit because of the interdependence of d33 and the relative dielectric constant, εr. Until now, the prohibitive amount of effort required to solve this problem has led to it being considered an unsolvable issue. Lead zirconate titanate ceramic, Pb(Zr,Ti)O3, has been reported to exhibit high values of d33 and εr. However, to be employed as piezoelectric energy harvester, a candidate material is required to exhibit both high piezoelectric charge coefficient and high piezoelectric electric voltage coefficient simultaneously. To enhance the figure of merit of Pb(Zr,Ti)O3-based materials, dopants have also been considered. Pb(Zn,Ni,Nb)O3- added Pb(Zr,Ti)O3, Pb(Zr,Ti)O3-Pb(Zn,Ni,Nb)O3 ceramic has been reported to exhibit a high d33 value of 561 pC/N. It's dielectric constant has also been reported to be low at 1898. In this study, Pb(Zr,Ti)O3-Pb(Zn,Ni,Nb)O3-Pb(In,Nb)O3 was investigated in the context of enhancing the figure of merit of Pb(Zr,Ti)O3-based materials. During the proposed process, we increased the corresponding figure of merit by adding Pb(In,Nb)O3 material. Besides exhibiting a low dielectric constant, the Pb(In,Nb)O3 material was also observed to exhibit high d33 × g33 as the proposed doping increased the value of d33 greatly, while maintaining the dielectric constant (Yan, J., et al., 2019. Large engancement of trans coefficient in PZT-PZN energy harvesting system through introducing low εrPIN relaxor. Journal of the European Ceramic Society, 39, pp.2666-2672). Further, we conducted an optimization experiment by controlling the doping concentration and the sintering temperature.

Enhanced Electrical Properties of AZO/IZO Multilayered Thin Film with Post Laser Annealing Process.

In this research, alternative deposition process of ZnO-based thin films have been studied for transparent conducting oxide (TCO) application. To improve the electrical and optical properties of transparent oxide thin films, alternatively stacked Al-doped ZnO and In-doped ZnO thin films were investigated. Multilayer structure of alternative 6 layers of thin films were prepared in this research. Especially, Aluminum and Indium were chosen as dopant materials. Thin films of Al-doped ZnO (AZO) and In-doped ZnO (IZO) were alternatively deposited by spin coating with sol-gel method. After deposition of multilayered thin films, multi steps of furnace (F), rapid thermal annealing (R) and CO2 laser annealing (L) processes were carried out and investigated thin film properties by dependence of post-annealing sequence and thin film structures. The electrical and optical properties of thin films were investigated by 4-point probe and UV-vis spectroscopy and its shows the greatest sheet resistance value of 0.59 kΩ/sq. from AZO/IZO multilayered structure and upper 85% of transmittance. The structural property and surface morphology were measured by X-Ray Diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Al- and In-doped ZnO thin film shows the highest intensity value at (002) peak of AZO/IZO multilayer structure which was performed FRL process.

Enhanced Electrical Properties of Platinum Spotted AZO/PET Thin Films Prepared by Sol-Gel Process.

Recently, many researches on Al-doped ZnO (AZO) thin film based transparent conducting oxide (TCO) have been intensively investigated for the electronic and display device applications. In this study, AZO thin films with different thicknesses were deposited on polyethylene terephthalate (PET) substrates by sol-gel spin coating at a relatively low temperature. By optimizing the AZO thickness, maximum figure of merit (FOM) values were investigated and discussed. Commonly, PET substrates are used in the fabrication of flexible display devices. However, because of the low melting temperature of the PET substrate (~200 °C), AZO thin films spin-coated on PET substrates cannot be subjected to crystallization at high temperatures. Therefore, alternative advanced optical annealing method was considered to crystalize the AZO thin films on the PET substrates. In this experiment, optical annealing method will be proposed. To increase electrical conductivity, Platinum (Pt) dots were sprayed on the AZO sample to improve the electric conductivity. The Pt-spotted AZO thin films on flexible PET substrates prepared by sputtering exhibited high electrical conductivities and high optical transmittances. The 0.63 nm-thick Pt/AZO/PET film exhibited a transmittance of 80% in the 380-800 nm range and the 3.78 nm-thick Pt/AZO/PET film exhibited a resistivity of 5.61×10-4 Ώ·m. Notably, the 159 nm-thick Pt/AZO/PET film exhibited an FOM of 156. Moreover, the sheet resistances and transmittances of the prepared AZO/PET films were determined.

Enhanced Electrical Mobilities of Laser Annealed Ga Doped ZnO Thin Films.

In this study, Ga-doped ZnO thin films were prepared, and their potential for transparent conducting oxide applications was assessed. To increase the electrical mobility and reduce the resistance of Ga-doped ZnO thin films, CO2 laser annealing was employed. Recently, the use of transparent conducting oxides (TCOs) have increased, particularly ZnO-based TCOs have been intensively investigated for display applications. To enhance the electrical and optical properties of ZnO thin films, Ga was used as a dopant. First, Ga-doped ZnO thin-film precursors were prepared by the sol-gel method. Subsequently, Ga-doped ZnO thin films were coated on glass substrates by spin coating. Electrical furnace treatment and rapid thermal annealing were employed to obtain and anneal a wurtzite ZnO based structure. The electrical and optical properties of the annealed thin films were optimized by varying the Ga doping concentration. Via Ga doping and optimized laser annealing, the resistivity of the ZnO film could be decreased from 16.32 Ω· cm to 0.45 Ω·cm; notably, the transmittance was similar (85%) in the 380-800 nm range. The transmittance properties of the films are not presented in this paper. Moreover, after an optical CO2 laser annealing process, the conductivity of the films improved by more than 40 times. Furthermore, the electrical properties (mobility, resistivity, and bulk and sheet concentrations) of the CO2-laser-annealed Ga-doped ZnO thin films were optimized.

Possibility of Thermal Energy Recycling Based Light Emitting Diodes Grid System.

Light Emitting Diodes (LED) are highly energy efficient and offer long-life times for display applications. Long life and minimal energy consumption are often the most attractive advantages for electronic devices. Because LEDs are based on compound semiconductors, which explore the direct transition between the conduction and valance band edges, thermal energy loss can be minimized during operation. However, even though these types of LEDs are based on direct transition type semiconductors, thermal energy is still emitted during operation owing to forward conduction and reverse leakage currents. This research proposes capturing this energy loss through thermoelectric module-based energy recycling methods to improve the energy efficiency of LED applications, achieving savings of up to 18%. Additional analysis was performed on high power LED sources resulting in the manufacture of a high-power LED light grid system.

Fabrication and Comparison of Self-Organized Ag and Au Nanodots on Ti/MgO(001) Substrates.

We analyze and compare the differences in the dewetting phenomena and crystal structure between Ag(5.0 nm) and Au(5.0 nm) layers deposited on a Ti(1.0 nm) seed layer coated onto a MgO(001) substrate. The samples are deposited at room temperature and annealed at 350-450 °C for 5 h. The surfaces of both Ag/Ti and Au/Ti films exhibit a completely separated island structure, subsequently leading to the formation of a nanodot array after annealing. Based on atomic force microscopy (AFM) analysis, we conclude that the dewetting progression speed of Ag/Ti films is higher than that of Au/Ti films. Based on X-ray diffraction (XRD) results, the Ti thin film acts as a seed layer, assisting the epitaxial growth of fcc-Ag(001) nanodots on the MgO(001) substrate, whereas in the case of Au/Ti, the Au layer grows non-epitaxially on the MgO(001) substrate, which is related to the difference in the surface energies of Ag and Au. Furthermore, the optical absorbance spectra of the self-organized Ag and Au nanodots with the Ti seed layer are obtained in the visible light range and the optical properties of Ag and Au nanodots are compared.