Noble-Metal-Free Multicomponent Nanointegration for Sustainable Energy Conversion.

Global energy and environmental crises are among the most pressing challenges facing humankind. To overcome these challenges, recent years have seen an upsurge of interest in the development and production of renewable chemical fuels as alternatives to the nonrenewable and high-polluting fossil fuels. Photocatalysis, photoelectrocatalysis, and electrocatalysis provide promising avenues for sustainable energy conversion. Single- and dual-component catalytic systems based on nanomaterials have been intensively studied for decades, but their intrinsic weaknesses hamper their practical applications. Multicomponent nanomaterial-based systems, consisting of three or more components with at least one component in the nanoscale, have recently emerged. The multiple components are integrated together to create synergistic effects and hence overcome the limitation for outperformance. Such higher-efficiency systems based on nanomaterials will potentially bring an additional benefit in balance-of-system costs if they exclude the use of noble metals, considering the expense and sustainability. It is therefore timely to review the research in this field, providing guidance in the development of noble-metal-free multicomponent nanointegration for sustainable energy conversion. In this work, we first recall the fundamentals of catalysis by nanomaterials, multicomponent nanointegration, and reactor configuration for water splitting, CO2 reduction, and N2 reduction. We then systematically review and discuss recent advances in multicomponent-based photocatalytic, photoelectrochemical, and electrochemical systems based on nanomaterials. On the basis of these systems, we further laterally evaluate different multicomponent integration strategies and highlight their impacts on catalytic activity, performance stability, and product selectivity. Finally, we provide conclusions and future prospects for multicomponent nanointegration. This work offers comprehensive insights into the development of cost-competitive multicomponent nanomaterial-based systems for sustainable energy-conversion technologies and assists researchers working toward addressing the global challenges in energy and the environment.

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition.

Large-area epitaxial growth of III-V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1×109cm-2is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO2/Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm-2/(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III-V thin films on van der Waals substrates.

Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution.

With a band gap close to the Shockley-Quiesser limit and excellent conduction band alignment with the water reduction potential, InP is an ideal photocathode material for photoelectrochemical (PEC) water reduction. Here, we develop facile self-assembled Au nanodots based on dewetting phenomena as a masking technique to fabricate wafer-scale InP nanowires (NWs) via a top-down approach. In addition, we report dual-function wet treatment using sulfur-dissolved oleylamine (S-OA) to remove a plasma-damaged surface in a controlled manner and stabilize InP NWs against surface corrosion in harsh electrolyte solutions. The resulting InP NW photocathodes exhibit an excellent photocurrent density of 33 mA/cm2 under 1 sun illumination in 1 M HCl with a highly stabilized performance without needing additional protection layers. Our approach combining large-area NW fabrication and surface engineering synergistically enhances light harvesting and PEC performance and stability, thereby providing a pathway for the development of efficient and durable InP photoelectrodes in a scalable manner.

Bi2 S3 -In2 S3 Heterostructures for Efficient Photoreduction of Highly Toxic Cr6+ Enabled by Facet-Coupling and Z-Scheme Structure.

The construction of Z-scheme photocatalyst materials mimicking the natural photosynthesis system provides many advantages, including increased light harvesting, spatially separated reductive and oxidative active sites and strong redox ability. Here, a novel Bi2 S3 nanorod@In2 S3 nanoparticle heterojunction photocatalyst synthesized through one-pot hydrothermal method for Cr6+ reduction is reported. A systematic investigation of the microstructural and compositional characteristics of the heterojunction catalyst confirms an intimate facet coupling between (440) crystal facet of In2 S3 and (060) crystal facet of Bi2 S3 , which provides a robust heterojunction interface for charge transfer. When tested under visible-light irradiation, the Bi2 S3 -In2 S3 heterojunction photocatalyst with 15% Bi2 S3 loading content achieves the highest Cr6+ photoreduction efficiency of nearly 100% with excellent stability, which is among the best-reported performances for Cr6+ removal. Further examination using optical, photoelectrochemical, impedance spectroscopy, and electron spin resonance spectroscopy characterizations reveal greatly improved photogenerated charge separation and transfer efficiency, and confirm Z-scheme electronic structure of the photocatalyst. The Z-scheme Bi2 S3 -In2 S3 photocatalyst demonstrated here presents promise for the removal of highly toxic Cr6+ , and could also be of interest in photocatalytic energy conversion.

Hole-Storage Enhanced a-Si Photocathodes for Efficient Hydrogen Production.

Ferrihydrite (Fh) has been demonstrated as an effective interfacial layer for photoanodes to achieve outstanding photoelectrochemical (PEC) performance for water oxidation reaction owing to its unique hole-storage function. However, it is unknown whether such a hole-storage layer can be used to construct highly efficient photocathodes for hydrogen evolution reaction (HER). In this work, we report Fh interfacial engineering of amorphous silicon photocathode (with nickel as HER cocatalyst) achieving a photocurrent density of 15.6 mA cm-2 at 0 V vs. the reversible hydrogen electrode and a half-cell energy conversion efficiency of 4.08 % in alkaline solution, outperforming most of reported a-Si based photocathodes including multi-junction configurations integrated with noble metal cocatalysts in acid solution. Besides, the photocurrent density is maintained above 14 mA cm-2 for 175 min with 100 % Faradaic efficiency for HER in alkaline solution. Our results demonstrate a feasible approach to construct efficient photocathodes via the application of a hole-storage layer.

Exploiting defects in TiO2 inverse opal for enhanced photoelectrochemical water splitting.

In this work, we report on defects generation in TiO2 inverse opal (IO) nanostructures by electrochemical reduction in order to increase photocatalytic activity and improve photoelectrochemical (PEC) water splitting performance. Macroporous structures, such as inverse opals, have attracted a lot of attention for energy-related applications because of their large surface area, interconnected pores, and ability to enhance light-matter interaction. Photocurrent density of electrochemically reduced TiO2-IO increased by almost 4 times, compared to pristine TiO2-IO photoelectrodes. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) analyses confirm the presence of oxygen vacancies in electrochemically reduced TiO2-IO photoelectrodes. Oxygen vacancies extend the absorption of TiO2 from the UV to visible region. The incident photon-to-current efficiency (IPCE) increased by almost 3 times in the absorption (UV) region of TiO2 and slightly in the visible region. Impedance studies show improved electrical conductivity, longer photogenerated electron lifetime, and a negative shift of the flatband potential, which are attributed to oxygen vacancies acting as electron donors. The Fermi level shifts to be closer to the conduction band edge of TiO2-IO.

Photoelectrochemical studies of InGaN/GaN MQW photoanodes.

The research interest in photoelectrochemical (PEC) water splitting is ever growing due to its potential to contribute towards clean and portable energy. However, the lack of low energy band gap materials with high photocorrosion resistance is the primary setback inhibiting this technology from commercialisation. The ternary alloy InGaN shows promise to meet the photoelectrode material requirements due to its high chemical stability and band gap tunability. The band gap of InGaN can be modulated from the UV to IR regions by adjusting the In concentration so as to absorb the maximum portion of the solar spectrum. This paper reports on the influence of In concentration on the PEC properties of planar and nanopillar (NP) InGaN/GaN multi-quantum well (MQW) photoanodes, where NPs were fabricated using a top-down approach. Results show that changing the In concentration, while having a minor effect on the PEC performance of planar MQWs, has an enormous impact on the PEC performance of NP MQWs, with large variations in the photocurrent density observed. Planar photoanodes containing MQWs generate marginally lower photocurrents compared to photoanodes without MQWs when illuminated with sunlight. NP MQWs with 30% In generated the highest photocurrent density of 1.6 mA cm-2, 4 times greater than that of its planar counterpart and 1.8 times greater than that of the NP photoanode with no MQWs. The InGaN/GaN MQWs also slightly influenced the onset potential of both the planar and NP photoanodes. Micro-photoluminescence, diffuse reflectance spectroscopy and IPCE measurements are used to explain these results.

Improved photoelectrochemical performance of GaN nanopillar photoanodes.

In this work, we report on the photoelectrochemical (PEC) investigation of n-GaN nanopillar (NP) photoanodes fabricated using metal organic chemical vapour deposition and the top-down approach. Substantial improvement in photocurrents is observed for GaN NP photoanodes compared to their planar counterparts. The role of carrier concentration and NP dimensions on the PEC performance of NP photoanodes is further elucidated. Photocurrent density is almost doubled for doped NP photoanodes whereas no improvement is noticed for undoped NP photoanodes. While the diameter of GaN NP is found to influence the onset potential, carrier concentration is found to affect both the onset and overpotential of the electrodes. Optical and electrochemical impedance spectroscopy characterisations are utilised to further explain the PEC results of NP photoanodes. Finally, improvement in the photostability of NP photoanodes with the addition of NiO as a co-catalyst is investigated.

Applications of atomic layer deposition in solar cells.

Atomic layer deposition (ALD) provides a unique tool for the growth of thin films with excellent conformity and thickness control down to atomic levels. The application of ALD in energy research has received increasing attention in recent years. In this review, the versatility of ALD in solar cells will be discussed. This is specifically focused on the fabrication of nanostructured photoelectrodes, surface passivation, surface sensitization, and band-structure engineering of solar cell materials. Challenges and future directions of ALD in the applications of solar cells are also discussed.

Statistical Design-Guided Synthesis of Nanoarchitectonics of High-Performance NiFeMoN Electrocatalyst through Facile One-Step Magnetron Sputtering.

This study presents an innovative, statistically-guided magnetron sputtering technique for creating nanoarchitectonics of high-performing, NiFeMoN electrocatalysts for oxygen evolution reaction (OER) in water splitting. Using a central composite face-centered (CCF) design, 13 experimental conditions are identified that enable precise optimization of synthesis parameters through response surface methodology (RSM), confirmed by analysis of variance (ANOVA). The statistical analysis highlighted a interaction between Mo% and N% in the nanostructured NiFeMoN and found optimizing values at 31.35% Mo and 47.12% N. The NiFeMoN catalyst demonstrated superior performance with a low overpotential of 216 mV at 10 mA cm-2 and remarkable stability over seven days, attributed to the modifications in electronic structure and the creation of new active sites through Mo and N additions. Furthermore, the NiFeMoN coating, when used as a protective layer for a Si photoanode in 1 m KOH, achieved an applied-bias photon-to-current efficiency (ABPE) of 5.2%, maintaining stability for 76 h. These advancements underscore the profound potential of employing statistical design for optimizing synthesis parameters of intricate catalyst materials via magnetron sputtering, paving the way for accelerated advancements in water splitting technologies and also in other energy conversion systems, such as nitrogen reduction and CO2 conversion.

Ferri-hydrite: A Novel Electron-Selective Contact Layer for InP Photovoltaic and Photoelectrochemical Cells.

Solar energy conversion devices with charge-selective contacts are attracting significant research interest as a cost-effective alternative to homojunction counterparts. This study presents a novel approach for fabricating high-performance solar cells based on InP heterojunctions using a solution-processed ferri-hydrite (Fh) electron-selective contact (ESC). The champion cell efficiency of 16.6% is achieved, which is a significant improvement over those from previous studies using other solution-processed ESC materials. X-ray photoelectron spectroscopy measurements showed that the low conduction band offset at the Fh-InP interface facilitated selective transport of photogenerated electrons from InP. Moreover, the Fh electron-selective contact layer provided an excellent photoelectrochemical half-cell water reduction efficiency of 8.4%. The Fh layer not only selectively extracts photogenerated electrons from InP but also simultaneously serves as a surface protection layer, improving the cell's long-term stability. These results demonstrate the potential of Fh as a low-cost and easily fabricated material for use in high-efficiency photovoltaic and photoelectrochemical devices. Our findings pave the way for further improvements in the efficiency of InP heterojunction solar cells by addressing the losses incurred in the cells.

Protocol for scalable top-down fabrication of InP nanopillars using a self-assembled random mask technique.

Nanostructured III-V semiconductors are attractive for solar energy conversion applications owing to their excellent light harvesting and optoelectronic properties. Here, we present a protocol for scalable fabrication of III-V semiconductor nanopillars using a simple and cost-effective top-down approach, combining self-assembled random mask and plasma etching techniques. We describe the deposition of Au/SiO2 layers to prepare random etch mask. We then detail the fabrication of nanopillars and photocathodes. Finally, we demonstrate III-V semiconductor nanopillars as a photoelectrode for photoelectrochemical water splitting. For complete details on the use and execution of this protocol, please refer to Narangari et al. (2021).1.

Quantum-dot-sensitized TiO2 inverse opals for photoelectrochemical hydrogen generation.

A new nanoarchitecture photoelectrode design comprising CdS quantum-dot-sensitized, optically and electrically active TiO(2) inverse opals is developed for photoelectrochemical water splitting. The photoelectrochemical performance shows high photocurrent density (4.84 mA cm(-2) at 0 V vs. Ag/AgCl) under simulated solar-light illumination.

Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting.

Thin semiconductors attract huge interest due to their cost-effective, flexible, lightweight, and semi-transparent properties. Here, we present a protocol on the preparation of thin semiconductor via controlled crack-assisted layer exfoliation technique. The protocol details the fabrication procedure for producing thin monocrystalline semiconductors with thicknesses in the range of a few tens of micrometers from thick donor substrates. In addition, we describe proof-of-concept application of the thin semiconductors for photoelectrochemical water-splitting to produce hydrogen fuel. For complete details on the use and execution of this protocol, please refer to Lee et al. (2021).

Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting.

Silicon (Si) has been widely investigated as a feasible material for photoelectrochemical (PEC) water splitting. Compared to thick wafer-based Si, thin Si (<50 µm thickness) could concurrently minimize the material usage allowing the development of cost-effective and flexible photoelectrodes for integrable PEC cells. This work presents the design and fabrication of thin Si using crack-assisted layer exfoliation method through detailed optical simulations and a systematic investigation of the exfoliation method. Thin free-standing Si photoanodes with sub-50 µm thickness are demonstrated by incorporating a nickel oxide (NiOx) thin film as oxygen evolution catalyst, light-trapping surface structure, and a rear-pn+ junction, to generate a photo-current density of 23.43 mA/cm2 with an onset potential of 1.2 V (vs. RHE). Our work offers a general approach for the development of efficient and cost-effective photoelectrodes with Si films with important implications for flexible and wearable Si-based photovoltaics and (opto)electronic devices.

Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap.

InP is currently being used in various (opto)electronic and energy device applications. However, the high cost of InP substrates and associated epitaxial growth techniques has been huge impediments for its widespread use. Here, large-area monocrystalline InP thin films are demonstrated via a convenient cracking method, and the InP thin films show material properties identical to their bulk counterparts. Furthermore, the same substrate can be reused for the production of additional InP thin films. This cracking technique is also shown to be a versatile tool to form an ultrasmooth surface or a microscale periodic triangular grating structure on the surface, depending on the orientation of the donor substrate used. Strain-induced band gap energy shift is also observed in localized regions of the thin film with a grating structure. The simplicity of this technique, which does not require any sophisticated equipment and complex fabrication process, is promising to reduce the cost of InP thin-film devices.

Engineering III-V Semiconductor Nanowires for Device Applications.

III-V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.

Ultrathin Ta2O5 electron-selective contacts for high efficiency InP solar cells.

Heterojunction solar cells with transition-metal-oxide-based carrier-selective contacts have been gaining considerable research interest owing to their amenability to low-cost fabrication methods and elimination of parasitic absorption and complex semiconductor doping process. In this work, we propose tantalum oxide (Ta2O5) as a novel electron-selective contact layer for photo-generated carrier separation in InP solar cells. We confirm the electron-selective properties of Ta2O5 by investigating band energetics at the InP-Ta2O5 interface using X-ray photoelectron spectroscopy. Time-resolved photoluminescence and power dependent photoluminescence reveal that the Ta2O5 inter-layer also mitigates parasitic recombination at the InP/transparent conducting oxide interface. With an 8 nm Ta2O5 layer deposited using an atomic layer deposition (ALD) system, we demonstrate a planar InP solar cell with an open circuit voltage, Voc, of 822 mV, a short circuit current density, Jsc, of 30.1 mA cm-2, and a fill factor of 0.77, resulting in an overall device efficiency of 19.1%. The Voc is the highest reported value to date for an InP heterojunction solar cells with carrier-selective contacts. The proposed Ta2O5 material may be of interest not only for other solar cell architectures including perovskite cells and organic solar cells, but also across a wide range of optoelectronics applications including solid state emitting devices, photonic crystals, planar light wave circuits etc.

15% Efficiency Ultrathin Silicon Solar Cells with Fluorine-Doped Titanium Oxide and Chemically Tailored Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) as Asymmetric Heterocontact.

In order to achieve a high performance-to-cost ratio to photovoltaic devices, the development of crystalline silicon (c-Si) solar cells with thinner substrates and simpler fabrication routes is an important step. Thin-film heterojunction solar cells (HSCs) with dopant-free and carrier-selective configurations look like ideal candidates in this respect. Here, we investigated the application of n-type silicon/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HSCs on periodic nanopyramid textured, ultrathin c-Si (∼25 µm) substrates. A fluorine-doped titanium oxide film was used as an electron-selective passivating layer showing excellent interfacial passivation (surface recombination velocity ∼10 cm/s) and contact property (contact resistivity ∼20 mΩ/cm2). A high efficiency of 15.10% was finally realized by optimizing the interfacial recombination and series resistance at both the front and rear sides, showing a promising strategy to fabricate high-performance ultrathin c-Si HSCs with a simple and low-temperature procedure.

InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting.

While photoelectrochemical (PEC) water splitting is a very promising route toward zero-carbon energy, conversion efficiency remains limited. Semiconductors with narrower band gaps can absorb a much greater portion of the solar spectrum, thereby increasing efficiency. However, narrow band gap (∼1 eV) III-V semiconductor photoelectrodes have not yet been thoroughly investigated. In this study, the narrow band gap quaternary III-V alloy InGaAsP is demonstrated for the first time to have great potential for PEC water splitting, with the long-term goal of developing high-efficiency tandem PEC devices. TiO2-coated InGaAsP photocathodes generate a photocurrent density of over 30 mA/cm2 with an onset potential of 0.45 V versus reversible hydrogen electrode, yielding an applied bias efficiency of over 7%. This is an excellent performance, given that nearly all power losses can be attributed to reflection losses. X-ray photoelectron spectroscopy and photoluminescence spectroscopy show that InGaAsP and TiO2 form a type-II band alignment, greatly enhancing carrier separation and reducing recombination losses. Beyond water splitting, the tunable band gap of InGaAsP could be of further interest in other areas of photocatalysis, including CO2 reduction.