Phase-change memory via a phase-changeable self-confined nano-filament.

Phase-change memory (PCM) has been considered a promising candidate for solving von Neumann bottlenecks owing to its low latency, non-volatile memory property and high integration density1,2. However, PCMs usually require a large current for the reset process by melting the phase-change material into an amorphous phase, which deteriorates the energy efficiency2-5. Various studies have been conducted to reduce the operation current by minimizing the device dimensions, but this increases the fabrication cost while the reduction of the reset current is limited6,7. Here we show a device for reducing the reset current of a PCM by forming a phase-changeable SiTex nano-filament. Without sacrificing the fabrication cost, the developed nano-filament PCM achieves an ultra-low reset current (approximately 10 µA), which is about one to two orders of magnitude smaller than that of highly scaled conventional PCMs. The device maintains favourable memory characteristics such as a large on/off ratio, fast speed, small variations and multilevel memory properties. Our finding is an important step towards developing novel computing paradigms for neuromorphic computing systems, edge processors, in-memory computing systems and even for conventional memory applications.

Non-epitaxial single-crystal 2D material growth by geometric confinement.

Two-dimensional (2D) materials and their heterostructures show a promising path for next-generation electronics1-3. Nevertheless, 2D-based electronics have not been commercialized, owing mainly to three critical challenges: i) precise kinetic control of layer-by-layer 2D material growth, ii) maintaining a single domain during the growth, and iii) wafer-scale controllability of layer numbers and crystallinity. Here we introduce a deterministic, confined-growth technique that can tackle these three issues simultaneously, thus obtaining wafer-scale single-domain 2D monolayer arrays and their heterostructures on arbitrary substrates. We geometrically confine the growth of the first set of nuclei by defining a selective growth area via patterning SiO2 masks on two-inch substrates. Owing to substantial reduction of the growth duration at the micrometre-scale SiO2 trenches, we obtain wafer-scale single-domain monolayer WSe2 arrays on the arbitrary substrates by filling the trenches via short growth of the first set of nuclei, before the second set of nuclei is introduced, thus without requiring epitaxial seeding. Further growth of transition metal dichalcogenides with the same principle yields the formation of single-domain MoS2/WSe2 heterostructures. Our achievement will lay a strong foundation for 2D materials to fit into industrial settings.

Vertical full-colour micro-LEDs via 2D materials-based layer transfer.

Micro-LEDs (µLEDs) have been explored for augmented and virtual reality display applications that require extremely high pixels per inch and luminance1,2. However, conventional manufacturing processes based on the lateral assembly of red, green and blue (RGB) µLEDs have limitations in enhancing pixel density3-6. Recent demonstrations of vertical µLED displays have attempted to address this issue by stacking freestanding RGB LED membranes and fabricating top-down7-14, but minimization of the lateral dimensions of stacked µLEDs has been difficult. Here we report full-colour, vertically stacked µLEDs that achieve, to our knowledge, the highest array density (5,100 pixels per inch) and the smallest size (4 µm) reported to date. This is enabled by a two-dimensional materials-based layer transfer technique15-18 that allows the growth of RGB LEDs of near-submicron thickness on two-dimensional material-coated substrates via remote or van der Waals epitaxy, mechanical release and stacking of LEDs, followed by top-down fabrication. The smallest-ever stack height of around 9 µm is the key enabler for record high µLED array density. We also demonstrate vertical integration of blue µLEDs with silicon membrane transistors for active matrix operation. These results establish routes to creating full-colour µLED displays for augmented and virtual reality, while also offering a generalizable platform for broader classes of three-dimensional integrated devices.

Heterogeneous integration of single-crystalline complex-oxide membranes.

Complex-oxide materials exhibit a vast range of functional properties desirable for next-generation electronic, spintronic, magnetoelectric, neuromorphic, and energy conversion storage devices1-4. Their physical functionalities can be coupled by stacking layers of such materials to create heterostructures and can be further boosted by applying strain5-7. The predominant method for heterogeneous integration and application of strain has been through heteroepitaxy, which drastically limits the possible material combinations and the ability to integrate complex oxides with mature semiconductor technologies. Moreover, key physical properties of complex-oxide thin films, such as piezoelectricity and magnetostriction, are severely reduced by the substrate clamping effect. Here we demonstrate a universal mechanical exfoliation method of producing freestanding single-crystalline membranes made from a wide range of complex-oxide materials including perovskite, spinel and garnet crystal structures with varying crystallographic orientations. In addition, we create artificial heterostructures and hybridize their physical properties by directly stacking such freestanding membranes with different crystal structures and orientations, which is not possible using conventional methods. Our results establish a platform for stacking and coupling three-dimensional structures, akin to two-dimensional material-based heterostructures, for enhancing device functionalities8,9.

Mixed-Dimensional Integration of 3D-on-2D Heterostructures for Advanced Electronics.

Two-dimensional (2D) materials have garnered significant attention due to their exceptional properties requisite for next-generation electronics, including ultrahigh carrier mobility, superior mechanical flexibility, and unusual optical characteristics. Despite their great potential, one of the major technical difficulties toward lab-to-fab transition exists in the seamless integration of 2D materials with classic material systems, typically composed of three-dimensional (3D) materials. Owing to the self-passivated nature of 2D surfaces, it is particularly challenging to achieve well-defined interfaces when forming 3D materials on 2D materials (3D-on-2D) heterostructures. Here, we comprehensively review recent progress in 3D-on-2D incorporation strategies, ranging from direct-growth- to layer-transfer-based approaches and from non-epitaxial to epitaxial integration methods. Their technological advances and obstacles are rigorously discussed to explore optimal, yet viable, integration strategies of 3D-on-2D heterostructures. We conclude with an outlook on mixed-dimensional integration processes, identifying key challenges in state-of-the-art technology and suggesting potential opportunities for future innovation.

Remote Epitaxy: Fundamentals, Challenges, and Opportunities.

Advanced heterogeneous integration technologies are pivotal for next-generation electronics. Single-crystalline materials are one of the key building blocks for heterogeneous integration, although it is challenging to produce and integrate these materials. Remote epitaxy is recently introduced as a solution for growing single-crystalline thin films that can be exfoliated from host wafers and then transferred onto foreign platforms. This technology has quickly gained attention, as it can be applied to a wide variety of materials and can realize new functionalities and novel application platforms. Nevertheless, remote epitaxy is a delicate process, and thus, successful execution of remote epitaxy is often challenging. Here, we elucidate the mechanisms of remote epitaxy, summarize recent breakthroughs, and discuss the challenges and solutions in the remote epitaxy of various material systems. We also provide a vision for the future of remote epitaxy for studying fundamental materials science, as well as for functional applications.

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions.

Three-dimensional (3D) hetero-integration technology is poised to revolutionize the field of electronics by stacking functional layers vertically, thereby creating novel 3D circuity architectures with high integration density and unparalleled multifunctionality. However, the conventional 3D integration technique involves complex wafer processing and intricate interlayer wiring. Here we demonstrate monolithic 3D integration of two-dimensional, material-based artificial intelligence (AI)-processing hardware with ultimate integrability and multifunctionality. A total of six layers of transistor and memristor arrays were vertically integrated into a 3D nanosystem to perform AI tasks, by peeling and stacking of AI processing layers made from bottom-up synthesized two-dimensional materials. This fully monolithic-3D-integrated AI system substantially reduces processing time, voltage drops, latency and footprint due to its densely packed AI processing layers with dense interlayer connectivity. The successful demonstration of this monolithic-3D-integrated AI system will not only provide a material-level solution for hetero-integration of electronics, but also pave the way for unprecedented multifunctional computing hardware with ultimate parallelism.

Remote epitaxy through graphene enables two-dimensional material-based layer transfer.

Epitaxy-the growth of a crystalline material on a substrate-is crucial for the semiconductor industry, but is often limited by the need for lattice matching between the two material systems. This strict requirement is relaxed for van der Waals epitaxy, in which epitaxy on layered or two-dimensional (2D) materials is mediated by weak van der Waals interactions, and which also allows facile layer release from 2D surfaces. It has been thought that 2D materials are the only seed layers for van der Waals epitaxy. However, the substrates below 2D materials may still interact with the layers grown during epitaxy (epilayers), as in the case of the so-called wetting transparency documented for graphene. Here we show that the weak van der Waals potential of graphene cannot completely screen the stronger potential field of many substrates, which enables epitaxial growth to occur despite its presence. We use density functional theory calculations to establish that adatoms will experience remote epitaxial registry with a substrate through a substrate-epilayer gap of up to nine ångströms; this gap can accommodate a monolayer of graphene. We confirm the predictions with homoepitaxial growth of GaAs(001) on GaAs(001) substrates through monolayer graphene, and show that the approach is also applicable to InP and GaP. The grown single-crystalline films are rapidly released from the graphene-coated substrate and perform as well as conventionally prepared films when incorporated in light-emitting devices. This technique enables any type of semiconductor film to be copied from underlying substrates through 2D materials, and then the resultant epilayer to be rapidly released and transferred to a substrate of interest. This process is particularly attractive in the context of non-silicon electronics and photonics, where the ability to re-use the graphene-coated substrates allows savings on the high cost of non-silicon substrates.

Top-down design and fabrication with digital technology of removable partial dentures incorporating custom abutments: A dental technique.

A novel design of removable partial dentures (RPDs) is described wherein custom abutments are incorporated into the RPD framework. The artificial teeth and custom abutments are designed by using a computer-aided design (CAD) software program. Subsequently, the RPD framework is designed and merged to the custom abutments in the CAD software program to form a single unit. This modified framework is additively manufactured in metal by using a 3D printer. Thereafter, the framework is adapted to the definitive cast and scanned by using a laboratory scanner. The scanned file is imported into the CAD software program, and the artificial teeth are redesigned. After fabricating each artificial tooth from a polymethylmethacrylate disk and artificial tooth and denture-base assemblies from a wax disk, the RPD is injection molded. This RPD design and fabrication workflow enables a top-down approach by prioritizing the shape and arrangement of the artificial teeth and facilitates their replacement.

Comparison of the accuracy of a cone beam computed tomography-based virtual mounting technique with that of the conventional mounting technique using a facebow.

STATEMENT OF PROBLEM: The introduction of digital technology in dentistry has resulted in a shift from conventional methods to digital techniques. However, mounting a digitized dental cast on a virtual articulator is challenging. Several techniques have been suggested to resolve this problem, but in the absence of a standardized method, digitized dental casts are often mounted arbitrarily on a virtual articulator. PURPOSE: The purpose of this clinical study was to compare the accuracy of a novel virtual facebow transfer (VM) technique based on cone beam computed tomography (CBCT) with that of the conventional mounting (CM) technique using a facebow. MATERIAL AND METHODS: Five repeated mountings were performed with each technique for 15 participants. In the CM group, dental casts were mounted using a facebow record and scanned for transmission to the virtual dental space. In the VM group, digital dental casts were mounted on the standard tessellation language file of a reference articulator by reconstructing a file of the participant's skull from CBCT data. In this group, a virtual facebow, prepared by scanning the articulator and facebow complex, was used. After the CM and VM casts had been aligned, the coordinates of target points set on the maxillary right central incisor, maxillary right first molar, and maxillary left first molar were determined, and the mean ±standard deviation distance between the target points was calculated to compare the precision of the techniques. Additionally, vectors of the target point on the maxillary right central incisor were compared to analyze the spatial difference between the techniques. Finally, the occlusal plane angle was calculated. For the correlation analysis of repeated measured data, a 1-way repeated measures analysis of variance (ANOVA) was first performed. The Kolmogorov-Smirnov test was performed to determine normality, and a paired t test and the Wilcoxon signed rank test were performed for normally and nonnormally distributed variables, respectively (α=.05). RESULTS: The mean distance between target points was significantly greater in the CM group (4.72 ±1.45 to 5.17 ±1.54 mm) than in the VM group (2.14 ±0.58 to 2.35 ±0.60 mm) (P<.05). The standard deviation between target points was significantly greater in the CM group (1.60 ±0.64 to 2.30 ±0.87 mm) than in the VM group (0.74 ±0.23 to 1.12 ±0.45 mm) (P<.05). The maxillary right central incisor was located more anteriorly in the VM group than in the CM (100%, P<.05) group. The occlusal plane angle was significantly steeper in the CM group than in the VM group (8.14 degrees versus 2.13 degrees, P<.05). CONCLUSIONS: The VM technique was more precise than the CM technique. VM casts were positioned ahead of CM casts. Further, the occlusal plane angle tended to be steeper with the CM technique than with the VM technique.

Effect of cement space settings on the marginal and internal fit of 3D-printed definitive resin crowns.

STATEMENT OF PROBLEM: The cement gap setting affects the marginal and internal fits depending on the crown material and manufacturing method (subtractive or additive manufacturing). However, information on the effects of cement space settings in the computer-aided design (CAD) software program, which is used to aid the manufacturing with 3-dimensional (3D) printing-type resin material, is lacking, and recommendations for optimal marginal and internal fit are needed. PURPOSE: The purpose of this in vitro study was to evaluate how cement gap settings affect the marginal and internal fit of a 3D-printed definitive resin crown. MATERIAL AND METHODS: After scanning a prepared typodont left maxillary first molar, a crown was designed with cement spaces of 35, 50, 70, and 100 µm by using a CAD software program. A total of 14 specimens per group were 3D printed from definitive 3D-printing resin. By using the replica technique, the intaglio surface of the crown was duplicated, and the duplicated specimen was sectioned in the buccolingual and mesiodistal directions. Statistical analyses were performed using the Kruskal-Wallis and the Mann-Whitney post hoc tests (α=.05). RESULTS: Although the median values of the marginal gaps were within the clinically acceptable limit (<120 µm) for all the groups, the smallest marginal gaps were obtained with the 70-µm setting. For the axial gaps, there was no observed difference in the 35-, 50-, and 70-µm groups, and the 100-µm group showed the largest gap. The smallest axio-occlusal and occlusal gaps were obtained with the 70-µm setting. CONCLUSIONS: Based on the findings of this in vitro study, a 70-µm cement gap setting is recommended for optimal marginal and internal fit of 3D-printed resin crowns.

A comprehensive study on the mechanical effects of implant-supported prostheses under multi-directional loading and different occlusal contact points.

AIMS: To evaluate screw loosening and fracture load and angular deviation of a single implant-supported prosthesis under multi-directional loading condition at three different occlusal contact points. METHODS: A total of 40 metal crowns were cemented to external connection implants and were embedded vertically and obliquely. The occlusal surface of the crown was designed with three flat surfaces, contact a, b, and c, representing outer and inner 20-degree inclination for buccal and lingual cusps. The angular deviations of implant crown under static 50N of loading were measured. And screw removal torque was evaluated before and after 57,600 load cycles. Then, fracture load was measured for each specimen. Data analysis was performed using one-way analysis of variance test of significance followed by Tukey honest significant difference (HSD) test(p < 0.05). RESULTS: Angular deviation results showed statistical significance between all contact points in vertically embedded group compared to obliquely embedded group, which showed similar results between contact A and B compared to C. In the other hand, screw loosening evaluation did not show statistical significance among the tested groups. And for the fracture load evaluation the maximum values reached twice the yield values in all contact areas. CONCLUSIONS: Mechanical effects were different regarding to diverse loading direction and contact points. The results of this study suggest that the stress concentration might increase in unfavorable vector direction.

Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes.

Free-standing crystalline membranes are highly desirable owing to recent developments in heterogeneous integration of dissimilar materials. Van der Waals (vdW) epitaxy enables the release of crystalline membranes from their substrates. However, suppressed nucleation density due to low surface energy has been a challenge for crystallization; reactive materials synthesis environments can induce detrimental damage to vdW surfaces, often leading to failures in membrane release. This work demonstrates a novel platform based on graphitized SiC for fabricating high-quality free-standing membranes. After mechanically removing epitaxial graphene on a graphitized SiC wafer, the quasi-two-dimensional graphene buffer layer (GBL) surface remains intact for epitaxial growth. The reduced vdW gap between the epilayer and substrate enhances epitaxial interaction, promoting remote epitaxy. Significantly improved nucleation and convergent quality of GaN are achieved on the GBL, resulting in the best quality GaN ever grown on two-dimensional materials. The GBL surface exhibits excellent resistance to harsh growth environments, enabling substrate reuse by repeated growth and exfoliation.

Accuracy of impression-making methods in edentulous arches: An in vitro study encompassing conventional and digital methods.

STATEMENT OF PROBLEM: Studies evaluating the accuracy of edentulous arch impressions encompassing conventional and digital methods are lacking. PURPOSE: The purpose of this in vitro study was to evaluate 8 impression-making methods for edentulous arches and to determine the effects of using a 3-dimensionally printed polyetheretherketone (PEEK) scanning aid on the accuracy of intraoral scanners. MATERIAL AND METHODS: Three sets of edentulous arch typodonts were scanned with an industrial scanner as a reference. Subsequently, a scanning aid for the edentulous arch was individually designed on each reference scan dataset by using a 3-dimensional modeling software program and fabricated in PEEK with a 3-dimensional printer. Each typodont was scanned with 2 intraoral scanners 12 times, with and without the assistance of a scanning aid for the edentulous arch. Impressions were made with 4 different conventional impression materials (irreversible hydrocolloid, polysulfide, polyether, and polyvinyl siloxane)-12 times for each typodont-the casts were poured and digitized with a tabletop scanner. Each scan data set was superimposed over the corresponding scan data set, and the original and absolute distance values from the paired surface points were obtained to measure the trueness and precision. These were expressed by using the mean, median, root mean square, and (90 percentile-10 percentile)/2 of the absolute distance value (NMT) concepts, based on the raw data extraction protocol. A repeated-measures ANOVA followed by a post hoc Bonferroni test was conducted (α=.05). RESULTS: The impression-making methods did not show statistically significant differences (P>.05) for either trueness or precision, particularly when the median values of the original and absolute distance values from the paired surface points were chosen as the standard values. One of the intraoral scanners used exhibited significantly superior outcomes to conventional impression materials when scanned with the scanning aid for the edentulous arch for both trueness and precision when the mean, root mean square, and NMT concepts were applied (P<.05). CONCLUSIONS: Intraoral scanners demonstrated accuracy comparable with that of conventional impression materials for making edentulous arch impressions, regardless of the concepts used to express the trueness and precision. The PEEK-based scanning aid for the edentulous arch did not improve the accuracy of the intraoral scanners; however, its application resulted in higher accuracy compared with that of conventional impression materials.

Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides.

Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS2 nanoribbons on ß-gallium (III) oxide (ß-Ga2O3) (100) substrates. LDE MoS2 nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 108 and an averaged room temperature electron mobility of 65 cm2 V-1 s-1. The MoS2 nanoribbons can be readily transferred to arbitrary substrates while the underlying ß-Ga2O3 can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe2 nanoribbons and lateral heterostructures made of p-WSe2 and n-MoS2 nanoribbons for futuristic electronics applications.

Fabrication of a removable partial denture combining conventional and digital techniques.

This article describes a combined conventional and digital workflow for fabricating removable partial dentures (RPDs). After scanning the dental cast and RPD framework assembly, artificial teeth and denture base regions were designed using computer-aided design software. The artificial teeth and denture base assembly was milled as a single structure by using a wax disk and then placed on the RPD framework. The artificial teeth were additionally milled from a polymethyl methacrylate disk. Conventional procedures were followed for denture investment until the wax elimination procedure, after which the assembly was replaced with the artificial teeth in the cope of the flasks, and the denture resin material was injected to process the RPD. This technique enabled the RPD to be fabricated in the same form as the design state.

Influence of shoulder coverage difference of abutment on stress distribution and screw stability in tissue-level internal connection implants: A finite element analysis and in vitro study.

STATEMENT OF PROBLEM: Tissue-level internal connection implants are widely used, but the difference in abutment screw stability because of the shoulder coverage formed by the contact between the shoulder of the implant collar and the abutment remains unclear. PURPOSE: The purpose of this finite element analysis (FEA) and in vitro study was to investigate stress distribution and abutment screw stability as per the difference in shoulder coverage of the abutment in tissue-level internal connection implants. MATERIAL AND METHODS: Abutments were designed in 3 groups as per the shoulder coverage of the implant collar, yielding complete coverage (complete group), half coverage (half group), no coverage (no group) groups. In the FEA, a tightening torque of 30.0 Ncm was applied to the abutment screw, a force of 250 N was applied to the crown at a 30-degree angle, and the von Mises stresses and the stress distribution patterns were evaluated. In the in vitro study, the groups were tested (n=12). A total of 200 000 cyclic loads were applied at 250 N, 14 Hz, and at a 30-degree angle. Removal torque values and scanning electron microscopy (SEM) images were assessed. Removal torque values were analyzed by ANOVA and paired t tests. RESULTS: The maximum von Mises stress of the abutment screw was the lowest in the complete group, slightly higher in the half group, and highest in the no group. High stresses were concentrated in 1 location in the implant abutment connection area of the no group. The removal torque values after loading were significantly lower in the no group than in the complete group (P=.047). The SEM images revealed concentrated structural loss and wear in 1 location of the no group. CONCLUSIONS: FEA and in vitro studies confirmed that the shoulder coverage of the abutment in the tissue-level internal connection implant helped improve screw stability. Cyclic loading reduced the removal torque of the abutment screw.

Mounting casts on a mechanical articulator by using digital multisource data: A dental technique.

A facebow transfer is typically used for mounting a maxillary gypsum cast in an ideal location in a mechanical articulator. However, the facebow transfer procedure is difficult and may cause the patient discomfort. This proposed technique uses a patient's cone beam computed tomography (CBCT) data to reproduce the occlusal plane in relation to digital articulator scan data, align the patient's gypsum cast or intraoral scan data on the reproduced plane, and then transfer the data to a mechanical articulator.

Integration of bulk materials with two-dimensional materials for physical coupling and applications.

Hybrid heterostructures are essential for functional device systems. The advent of 2D materials has broadened the material set beyond conventional 3D material-based heterostructures. It has triggered the fundamental investigation and use in applications of new coupling phenomena between 3D bulk materials and 2D atomic layers that have unique van der Waals features. Here we review the state-of-the-art fabrication of 2D and 3D heterostructures, present a critical survey of unique phenomena arising from forming 3D/2D interfaces, and introduce their applications. We also discuss potential directions for research based on these new coupled architectures.

Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene.

Graphene epitaxy on the Si face of a SiC wafer offers monolayer graphene with unique crystal orientation at the wafer-scale. However, due to carrier scattering near vicinal steps and excess bilayer stripes, the size of electrically uniform domains is limited to the width of the terraces extending up to a few microns. Nevertheless, the origin of carrier scattering at the SiC vicinal steps has not been clarified so far. A layer-resolved graphene transfer (LRGT) technique enables exfoliation of the epitaxial graphene formed on SiC wafers and transfer to flat Si wafers, which prepares crystallographically single-crystalline monolayer graphene. Because the LRGT flattens the deformed graphene at the terrace edges and permits an access to the graphene formed at the side wall of vicinal steps, components that affect the mobility of graphene formed near the vicinal steps of SiC could be individually investigated. Here, we reveal that the graphene formed at the side walls of step edges is pristine, and scattering near the steps is mainly attributed by the deformation of graphene at step edges of vicinalized SiC while partially from stripes of bilayer graphene. This study suggests that the two-step LRGT can prepare electrically single-domain graphene at the wafer-scale by removing the major possible sources of electrical degradation.