Thermal transport in epitaxial Si1-x Ge x alloy nanowires with varying composition and morphology.

We report on structural, compositional, and thermal characterization of self-assembled in-plane epitaxial Si1-x Ge x alloy nanowires grown by molecular beam epitaxy on Si (001) substrates. The thermal properties were studied by means of scanning thermal microscopy (SThM), while the microstructural characteristics, the spatial distribution of the elemental composition of the alloy nanowires and the sample surface were investigated by transmission electron microscopy and energy dispersive x-ray microanalysis. We provide new insights regarding the morphology of the in-plane nanostructures, their size-dependent gradient chemical composition, and the formation of a 5 nm thick wetting layer on the Si substrate surface. In addition, we directly probe heat transfer between a heated scanning probe sensor and Si1-x Ge x alloy nanowires of different morphological characteristics and we quantify their thermal resistance variations. We correlate the variations of the thermal signal to the dependence of the heat spreading with the cross-sectional geometry of the nanowires using finite element method simulations. With this method we determine the thermal conductivity of the nanowires with values in the range of 2-3 W m-1 K-1. These results provide valuable information in growth processes and show the great capability of the SThM technique in ambient environment for nanoscale thermal studies, otherwise not possible using conventional techniques.

Charged nano-domes and bubbles in epitaxial graphene.

For the first time, new epitaxial graphene nano-structures resembling charged 'bubbles' and 'domes' are reported. A strong influence, arising from the change in morphology, on the graphene layer's electronic, mechanical and optical properties has been shown. The morphological properties of these structures have been studied with atomic force microscopy (AFM), ultrasonic force microscopy (UFM) and Raman spectroscopy. After initial optical microscopy observation of the graphene, a detailed description of the surface morphology, via AFM and nanomechanical UFM measurements, was obtained. Here, graphene nano-structures, domes and bubbles, ranging from a few tens of nanometres (150­200 nm) to a few µm in size have been identified. The AFM topographical and UFM stiffness data implied the freestanding nature of the graphene layer within the domes and bubbles, with heights on the order of 5­12 nm. Raman spectroscopy mappings of G and 2D bands and their ratio confirm not only the graphene composition of these structures but also the existence of step bunching, defect variations and the carrier density distribution. In particular, inside the bubbles and substrate there arises complex charge redistribution; in fact, the graphene bubble­substrate interface forms a charged capacitance. We have determined the strength of the electric field inside the bubble­substrate interface, which may lead to a minigap of the order of 5 meV opening for epitaxial graphene grown on 4H-SiC face-terminated carbon.

Material sensitive scanning probe microscopy of subsurface semiconductor nanostructures via beam exit Ar ion polishing.

Whereas scanning probe microscopy (SPM) is highly appreciated for its nanometre scale resolution and sensitivity to surface properties, it generally cannot image solid state nanostructures under the immediate sample surface. Existing methods of cross-sectioning (focused ion beam milling and mechanical and Ar ion polishing) are either prohibitively slow or cannot provide a required surface quality. In this paper we present a novel method of Ar ion beam cross-section polishing via a beam exiting the sample. In this approach, a sample is tilted at a small angle with respect to the polishing beam that enters from underneath the surface of interest and exits at a glancing angle. This creates an almost perfect nanometre scale flat cross-section with close to open angle prismatic shape of the polished and pristine sample surfaces ideal for SPM imaging. Using the new method and material sensitive ultrasonic force microscopy we mapped the internal structure of an InSb/InAs quantum dot superlattice of 18 nm layer periodicity with the depth resolution of the order of 5 nm. We also report using this method to reveal details of interfaces in VLSI (very large scale of integration) low k dielectric interconnects, as well as discussing the performance of the new approach for SPM as well as for scanning electron microscopy studies of nanostructured materials and devices.

The use of acoustic microscopy for biological tissue characterization.

A system of transmission raster acoustic microscope with an ultrasound frequency of 450 MHz has been designed to investigate biological tissues and comparative analysis of their optical and acoustic images. The possibility of obtaining the contrast acoustic images of nonfixed, nonstained biological tissues and viscoelasticity measurements in microscale was demonstrated.