Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition.

We report on the influence of a capping layer on the photoluminescence properties of self-assembled GaN quantum dots grown on an Al(0.5)Ga(0.5)N template. Self-assembled GaN quantum dots show a large quantum confined Stark shift and long carrier recombination time due to strong built-in spontaneous and piezoelectric polarization fields. Nevertheless, owing to strong carrier localization and suppressed nonradiative processes, these quantum dots have a high-quantum efficiency even at room temperature. Here, we show that the capping thickness has an important role on the optical properties of the GaN quantum dots. The radiative and nonradiative recombination processes of quantum dots are strongly affected by adjusting the capping thickness, and the GaN quantum dots with 12 monolayers-thick Al(0.5)Ga(0.5)N capping layer show a remarkably high internal quantum efficiency of more than 80% at room temperature. We also studied photoluminescence quenching and enhancement for surface (uncapped) quantum dots caused by photoadsorption and photodesorption of oxygen.

GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes.

GaN microwires grown by metalorganic vapour phase epitaxy and with radii typically on the order of 1-5 micrometers exhibit a number of resonances in their photoluminescence spectra. These resonances include whispering gallery modes and transverse Fabry-Perot modes. A detailed spectroscopic study by polarization-resolved microphotoluminescence, in combination with electron microscopy images, has enabled to differentiate both kinds of modes and determined their main spectral properties. Finally, the dispersion of the ordinary and extraordinary refractive indices of strain-free GaN in the visible-UV range has been obtained thanks to the numerical simulation of the observed modes.

A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures.

Group III-nitride semiconductor-based ultraviolet (UV) light emitting diodes have been suggested as a substitute for conventional arc-lamps such as mercury, xenon and deuterium arc-lamps, since they are compact, efficient and have a long lifetime. However, in previously reported studies, group III-nitride UV light emitting diodes did not show a broad UV spectrum range as conventional arc-lamps, which restricts their application in fields such as medical therapy and UV spectrophotometry. Here, we propose GaN quantum dots (QDs) grown on different facets of hexagonal truncated pyramid structures formed on a conventional (0001) sapphire substrate. A hexagonal truncated GaN pyramid structure includes {101̄1} semipolar facets as well as a (0001) polar facet, which have intrinsically different piezoelectric fields and growth rates of GaN QDs. Consequently, we successfully demonstrated a plateau-like broadband UV spectrum ranging from ∼400 nm (UV-A) to ∼270 nm (UV-C) from the GaN QDs. In addition, at the top-edge of the truncated pyramid structure, a strain was locally suppressed compared to the center of the truncated pyramid structure. As a result, various emission wavelengths in the UV range were achieved from the GaN QDs grown on the sidewall, top-edge and top-center of hexagonal truncated pyramid structures, which ultimately provide a broadband UV spectrum with high efficiency.

Revisiting the factorial validity of the Revised UCLA Loneliness Scale: a test of competing models in a sample of teachers.

Over the years, various studies addressing different populations have consistently raised concerns about the unidimensionality of the Revised UCLA Loneliness Scale. In the present study, the factorial structure of the scale was examined by comparing it to alternative models. In a sample of 1,157 French Canadian teachers, results of confirmatory factor analysis support a three-factor model solution. Support for the invariance of this model across sexes and teaching levels (i.e., elementary and high school) was also obtained.

Principals' transformational leadership and teachers' collective efficacy.

The study was designed to test the relationship of principals' transformational, transactional, and laissez-faire leadership with teachers' collective efficacy. Bandura's theory of efficacy applied to the group and Bass's transformational leadership theory were used as the theoretical framework. Participants included 487 French Canadian teachers from 40 public high schools. As expected, there were positive and significant correlations between principals' transformational and transactional leadership and teachers' collective efficacy. Also, there was a negative and significant correlation between laissez-faire leadership and teachers' collective efficacy. Moreover, regression analysis showed transformational leadership significantly enhanced the predictive capabilities of transactional leadership on teachers' collective efficacy. These results confirm the importance of leadership to predict collective efficacy and, by doing so, strengthen Bass's theory of leadership.