RESUMO
We demonstrate a fiber-microresonator dual-cavity architecture with which we generate 880 nm of comb bandwidth without the need for a continuous-wave pump laser. Comb generation with this pumping scheme is greatly simplified as compared to pumping with a single frequency laser, and the generated combs are inherently robust due to the intrinsic feedback mechanism. Temporal and radio frequency (RF) characterization show a regime of steady comb formation that operates with reduced RF amplitude noise. The dual-cavity design is capable of being integrated on-chip and offers the potential of a turn-key broadband multiple wavelength source.
Assuntos
Tecnologia de Fibra Óptica/instrumentação , Lasers , Sistemas Microeletromecânicos/instrumentação , Ressonância de Plasmônio de Superfície/instrumentação , TransdutoresRESUMO
We observe strong modal coupling between the TE00 and TM00 modes in Si3N4 ring resonators revealed by avoided crossings of the corresponding resonances. Such couplings result in significant shifts of the resonance frequencies over a wide range around the crossing points. This leads to an effective dispersion that is one order of magnitude larger than the intrinsic dispersion and creates broad windows of anomalous dispersion. We also observe the changes to frequency comb spectra generated in Si3N4 microresonators due to polarization mode and higher-order mode crossings and suggest approaches to avoid these effects. Alternatively, such polarization mode crossings can be used as a tool for dispersion engineering in microresonators.
RESUMO
We investigate simultaneously the temporal and optical and radio-frequency spectral properties of parametric frequency combs generated in silicon-nitride microresonators and observe that the system undergoes a transition to a mode-locked state. We demonstrate the generation of sub-200-fs pulses at a repetition rate of 99 GHz. Our calculations show that pulse generation in this system is consistent with soliton modelocking. Ultimately, such parametric devices offer the potential of producing ultra-short laser pulses from the visible to mid-infrared regime at repetition rates from GHz to THz.
RESUMO
We report the first experimental demonstration of broadband frequency comb generation from a single-frequency pump laser at 1-µm using parametric oscillation in a high-Q silicon-nitride ring resonator. The resonator dispersion is engineered to have a broad anomalous group velocity dispersion region near the pump wavelength for efficient parametric four-wave mixing. The comb spans 55 THz with a 230-GHz free spectral range. These results demonstrate the powerful advantage of dispersion engineering in chip-based devices for producing combs with a wide range of pump wavelengths.
Assuntos
Filtração/instrumentação , Lasers , Luz , Dispositivos Ópticos , Refratometria/instrumentação , Transdutores , Simulação por Computador , Desenho Assistido por Computador , Desenho de EquipamentoRESUMO
We demonstrate asynchronous, single-shot characterization of an ultrafast, high-repetition-rate pulse source using a time-lens-based temporal magnifier. We measure a 225 GHz repetition-rate pulse train from a microresonator-based frequency comb. In addition, we show that such a system can be used as a frequency compressor for real-time, high-speed RF spectral characterization.
RESUMO
We propose and experimentally demonstrate ultrawideband monocycle pulse generation using nondegenerate two-photon absorption in a silicon waveguide. The free-carrier absorption induced pulse tail at the rising edge of inverted probe pulse is largely compensated by the overlapped pump pulse and results in a symmetric negative monocycle pulse. A 143 ps Gaussian monocycle pulse is successfully obtained with a 131.7% fractional 10 dB bandwidth using a 68 ps pulsed pump. The 10 dB bandwidth and center frequency of the RF spectrum for the generated monocycle pulse can be largely tuned using an optical delay line. An operational bandwidth of 30 nm is demonstrated experimentally with stable performance, and larger optical bandwidth is expected.
RESUMO
By fabricating high-Q silicon-nitride spiral resonators, we demonstrate frequency combs spanning over 200 nm with free spectral ranges (FSRs) of 80, 40, and 20 GHz using cascaded four-wave mixing. We characterize the RF beat note for the 20 GHz FSR comb, and the measured linewidth of 3.6 MHz is consistent with thermal fluctuations in the resonator due to amplitude noise of the pump source. These combs represent an important advance towards developing a complementary metal-oxide-semiconductor (CMOS)-based system capable of linking the optical and electronic regimes.
RESUMO
We demonstrate second- and third-harmonic generation in a centrosymmetric CMOS-compatible material using ring resonators and integrated optical waveguides. The χ(2) response is induced by using the nanoscale structure of the waveguide to break the bulk symmetry of silicon nitride (Si3N4) with the silicon dioxide (SiO2) cladding. Using a high-Q ring resonator cavity to enhance the efficiency of the process, we detect the second-harmonic output in the visible wavelength range with milliwatt input powers at telecom wavelengths. We also observe third-harmonic generation from the intrinsic χ(3) susceptibility of the silicon nitride. Phase matching of the harmonic processes occurs due to the near coincidence of indices of refraction of the fundamental mode at the pump frequency and the corresponding higher-order modes of the harmonic fields.
RESUMO
We demonstrate the generation of broad-bandwidth optical frequency combs from a CMOS-compatible integrated microresonator. We characterize the comb quality using a novel self-referencing method and verify that the comb line frequencies are equidistant over a bandwidth of 115 nm (14.5 THz), which is nearly an order of magnitude larger than previous measurements.
RESUMO
We demonstrate a frequency comb spanning an octave via the parametric process of cascaded four-wave mixing in a monolithic, high-Q silicon nitride microring resonator. The comb is generated from a single-frequency pump laser at 1562 nm and spans 128 THz with a spacing of 226 GHz, which can be tuned slightly with the pump power. In addition, we investigate the RF amplitude noise characteristics of the parametric comb and find that the comb can operate in a low-noise state with a 30 dB reduction in noise as the pump frequency is tuned into the cavity resonance.
RESUMO
We demonstrate reduction of the free-carrier lifetime in a silicon nanowaveguide from 3 ns to 12.2 ps by applying a reverse bias across an integrated p-i-n diode. This observation represents the shortest free-carrier lifetime demonstrated to date in silicon waveguides. Importantly, the presence of the p-i-n structure does not measurably increase the propagation loss of the waveguide. We derive a figure of merit demonstrating equal dependency of the nonlinear phase shift on free-carrier lifetime and linear propagation loss.
Assuntos
Nanoestruturas/química , Nanoestruturas/ultraestrutura , Nanotecnologia/instrumentação , Semicondutores , Silício/química , Campos Eletromagnéticos , Transporte de Elétrons , Desenho de Equipamento , Análise de Falha de Equipamento , Luz , Espalhamento de RadiaçãoRESUMO
We demonstrate high confinement, low-loss silicon nitride ring resonators with intrinsic quality factor (Q) of 3*10(6) operating in the telecommunication C-band. We measure the scattering and absorption losses to be below 0.065dB/cm and 0.055dB/cm, respectively.