The Substitution of Rare-Earth Gd in BaScCuTe3 Realizing the Band Degeneracy and the Point-Defect Scattering toward Enhanced Thermoelectric Performance.

Zintl compounds have continuously received significant attention, primarily due to their structural characteristics that align with the properties of the electron crystal and phonon glass. In this study, the crystal structure and thermoelectric properties of the quaternary Zintl chalcogenide BaScCuTe3 are investigated. The band structure calculations for BaScCuTe3 reveal a slight energy split of 0.08 eV between the second valence band and the valence band maximum, suggesting the presence of multiband-transport behaviors. Substitution of rare earth Gd for Sc is conducted, which significantly increases the hole concentration from 4.1 × 1019 cm-3 to 8.2 × 1019 cm-3 at room temperature. Meanwhile, the Seebeck coefficient increases because of the participation of the second valence band. A maximum power factor of 6.56 µW/cm·K2 at 773 K is obtained, which is 72% higher than that of the pristine sample. Moreover, the lattice thermal conductivity decreases from 0.57 W/m·K for BaScCuTe3 to 0.48 W/m·K for BaSc0.97Gd0.03CuTe3 at 773 K, owing to the introduction of point-defect scattering. As a result, there is a noteworthy improvement in the thermoelectric figure of merit zT, increasing from 0.44 for the undoped sample to 0.85 for BaSc0.98Gd0.02CuTe3. Considering these findings, BaScCuTe3 exhibits great potential and holds promise for further investigation in the field of thermoelectric materials.

Construct Amorphous Polymer Interface to Enhance the Thermoelectric Performance of Commercial Bi0.5Sb1.5Te3 Materials.

Interfaces, such as grain boundaries and phase boundaries in thermoelectric (TE) materials, play a crucial role in the carrier/phonon transport. Accurate control of the features of interfaces, including composition, crystalline nature, and thickness may give rise to a promising pathway to break the trade-off between phonon and carrier transport properties, which is essential to design high-performance TE materials. In this work, the amorphous polymer interface (API) layer is introduced to the p-type commercial Bi0.5Sb1.5Te3 (BST) TE material by the liquid-phase sintering process. Due to the larger mismatch in the acoustic impedance or phonon spectra between the amorphous polymer layer and the BST phase, the additional interfacial thermal resistance is introduced, which results in a large decrease in lattice thermal conductivity. It is found that the interfacial thermal resistance at the API is much higher than that of normal grain boundary and hetero interface reported in the literature. Conversely, taking advantage of the strong electron and phonon scattering, a large net get of ZT was achieved. A maximum ZT of ∼1.22 at 350 K was obtained in the BST/polyimide-0.5% sample, which is considerably greater than that of the commercial BST matrix (∼0.99 at 350 K). Furthermore, the optimized BST/polymer sample also exhibited almost 20% enhancement in hardness compared with the pure BST sample. This work has opened a new window for designing high-performance TE composites, which may extend to other material systems.

In-Plane Overdamping and Out-Plane Localized Vibration Contribute to Ultralow Lattice Thermal Conductivity of Zintl Phase KCdSb.

Zintl phases typically exhibit low lattice thermal conductivity, which are extensively investigated as promising thermoelectric candidates. While the significance of Zintl anionic frameworks in electronic transport properties is widely recognized, their roles in thermal transport properties have often been overlooked. This study delves into KCdSb as a representative case, where the [CdSb4/4]- tetrahedrons not only impact charge transfer but also phonon transport. The phonon velocity and mean free path, are heavily influenced by the bonding distance and strength of the Zintl anions Cd and Sb, considering the three acoustic branches arising from their vibrations. Furthermore, the weakly bound Zintl cation K exhibits localized vibration behaviors, resulting in strong coupling between the high-lying acoustic branch and the low-lying optical branch, further impeding phonon diffusion. The calculations reveal that grain boundaries also contribute to the low lattice thermal conductivity of KCdSb through medium-frequency phonon scattering. These combined factors create a glass-like thermal transport behavior, which is advantageous for improving the thermoelectric merit of zT. Notably, a maximum zT of 0.6 is achieved for K0.84Na0.16CdSb at 712 K. The study offers both intrinsic and extrinsic strategies for developing high-efficiency thermoelectric Zintl materials with extremely low lattice thermal conductivity.

Phase interface engineering enables state-of-the-art half-Heusler thermoelectrics.

In thermoelectric, phase interface engineering proves effective in reducing the lattice thermal conductivity via interface scattering and amplifying the density-of-states effective mass by energy filtering. However, the indiscriminate introduction of phase interfaces inevitably leads to diminished carrier mobility. Moreover, relying on a singular energy barrier is insufficient for comprehensive filtration of low-energy carriers throughout the entire temperature range. Addressing these challenges, we advocate the establishment of a composite phase interface using atomic layer deposition (ALD) technology. This design aims to effectively decouple the interrelated thermoelectric parameters in ZrNiSn. The engineered coherent dual-interface energy barriers substantially enhance the density-of-states effective mass across the entire temperature spectrum while preser carrier mobility. Simultaneously, the strong interface scattering on phonons is crucial for curtailing lattice thermal conductivity. Consequently, a 40-cycles TiO2 coating on ZrNi1.03Sn0.99Sb0.01 achieves an unprecedented zT value of 1.3 at 873 K. These findings deepen the understanding of coherent composite-phase interface engineering.

Thermoelectric Performance Enhancement in Commercial Bi0.5Sb1.5Te3 Materials by Introducing Gradient Cu-Doped Grain Boundaries.

Modulated doping has always been a conventional and effective way to optimize thermoelectric (TE) materials. Unfavorably, the efficiency of conventional doping is always restricted by the strong interdependence of thermoelectric parameters. Here, an unconventional grain boundary doping strategy is reported to solve the above problem using commercial p-type Bi0.5Sb1.5Te3 as matrix materials. Decoupling of the three key TE parameters and large net get of the figure of merit (ZT) could be achieved in Bi0.5Sb1.5Te3 materials by introducing the gradient Cu-doped grain boundary. A high ZT of ∼1.40 at 350 K and a superior average ZT of ∼1.24 (300-475 K) are obtained in the as-prepared samples, projecting a maximum conversion efficiency of ∼8.25% at ΔT = 200 K, which are considerably greater than those of the commercial Bi0.5Sb1.5Te3 matrix and the traditional Cu-doped Bi0.5Sb1.5Te3 sample. This study gives deep insights to understand the relationships between the microstructure and the carrier/phonon transport behaviors and promotes a new strategy for improving the thermoelectric performance of commercial p-type Bi0.5Sb1.5Te3 materials.

Improved Thermal Stability and Enhanced Thermoelectric Properties of p-Type BaCu2Te2 by Doping of Cl.

Doping in semiconductors is a widely implemented strategy for manipulation of carrier concentration, which is a critical parameter to regulate the thermoelectric performance. Stoichiometric BaCu2Te2 shows high hole concentration and unstable transport properties owing to the inherent Cu vacancy and dynamic precipitation behavior. In this work, Te has been partially substituted by Cl in BaCu2Te2 to suppress the overhigh hole concentration. Due to the high electronegativity of Cl, strong Cl-Cu bonds can significantly inhibit the Cu migration and the consequent dynamic precipitation. Meanwhile, nano-precipitate BaCl2 distributes in the grain boundary, acting as ionic blocking layers. Therefore, the thermal stability of the samples can be essentially improved via chemical bonding strengthening and grain boundary engineering. In terms of thermal transport, the introduced point defects and second phase strengthen the short-wavelength and medium-wavelength phonon scattering, leading to further reduced thermal conductivity. Eventually, the repeatable ZT value of BaCu2Te1.98Cl0.02 reached 1.22 at 823 K, which is higher by 19.6% compared with 1.02 of pristine BaCu2Te2. The average ZTs of BaCu2Te2-xClx (x = 0, 0.02, 0.04, and 0.06) in the temperature range of 323-823 K are 0.737 for x = 0.02, 0.689 for x = 0.04, and 0.667 for x = 0.06, which are 24.6, 17.2, and 13.4% higher than the average ZT of 0.588 corresponding to the undoped sample, respectively. The study shows that synergetic enhancements of thermal stability and thermoelectric properties can be achieved by strengthening chemical bonding and constructing ionic blocking layers in the grain boundary, which can be applied to other fast-ionic conductor thermoelectric materials.

Highly Distorted Grain Boundary with an Enhanced Carrier/Phonon Segregation Effect Facilitates High-Performance Thermoelectric Materials.

Grain boundary plays an important role in determining the phonon/carrier transport behaviors of thermoelectric (TE) materials, especially for the polycrystalline materials with the average grain size in nanoscale dimensions. Adjusting the grain size and boundaries of TE materials is considered as an effective approach to decouple TE parameters and thereby synergistically optimize the TE performance. Here, the highly distorted grain boundary with an enhanced carrier/phonon segregation effect is introduced to the commercial n-type Bi2Te2.7Se0.3 matrix. The existence of highly distorted grain boundaries can not only enhance the interfacial Seebeck coefficient without significant detriment to the electrical conductivity but also increase the interfacial thermal resistance of grain boundaries, leading to the synergistic reduction of the thermal conductivity. As a result, a peak figure of merit zTmax ≈ 1.22@425 K and an average zTavg ≈ 1.1(300-500 K) are obtained, which are about 55 and 57% higher than the corresponding values of the commercial Bi2Te2.7Se0.3 matrix, respectively. This work represents a new avenue for improving the commercial Bi2Te2.7Se0.3 TE material, which could further promote the development of the TE technology.

Twin boundary defect engineering improves lithium-ion diffusion for fast-charging spinel cathode materials.

Defect engineering on electrode materials is considered an effective approach to improve the electrochemical performance of batteries since the presence of a variety of defects with different dimensions may promote ion diffusion and provide extra storage sites. However, manipulating defects and obtaining an in-depth understanding of their role in electrode materials remain challenging. Here, we deliberately introduce a considerable number of twin boundaries into spinel cathodes by adjusting the synthesis conditions. Through high-resolution scanning transmission electron microscopy and neutron diffraction, the detailed structures of the twin boundary defects are clarified, and the formation of twin boundary defects is attributed to agminated lithium atoms occupying the Mn sites around the twin boundary. In combination with electrochemical experiments and first-principles calculations, we demonstrate that the presence of twin boundaries in the spinel cathode enables fast lithium-ion diffusion, leading to excellent fast charging performance, namely, 75% and 58% capacity retention at 5 C and 10 C, respectively. These findings demonstrate a simple and effective approach for fabricating fast-charging cathodes through the use of defect engineering.

Atomic-scale tuning of oxygen-doped Bi2Te2.7Se0.3 to simultaneously enhance the Seebeck coefficient and electrical conductivity.

Manipulation of oxygen-related impurities is an extreme challenge for most of the thermoelectric materials, especially for those possessing nanostructures, since they normally result in the degradation of the thermoelectric performance. Here, we demonstrate that by atomic-scale controlling of oxygen doping in the form of dislocation clusters in Bi2Te2.7Se0.3 (BTS) thermoelectric materials, the trade-off between the Seebeck coefficient and electrical conductivity is broken, resulting in the simultaneously enhanced Seebeck coefficient and electrical conductivity and the suppressed thermal conductivity. As a consequence, a maximum ZT of 0.91 is achieved, which is approximately 1.4 times higher than that of pristine BTS. Based on HR-STEM investigation, the oxygen-related dislocation clusters can be unambiguously identified and we argue that the optimized carrier/phonon transport behavior can be attributed to the multifunctionality of oxygen-related dislocation clusters in BTS acting as electron donors, electron energy filters and phonon blockers. Our work provides a clear microscopic understanding on the role of oxygen doping in modifying phonon/carrier transport behavior in BTS thermoelectric materials, which provides an efficient avenue for designing high performance thermoelectric materials.

Graphene Quantum Dots Embedded in Bi2Te3 Nanosheets To Enhance Thermoelectric Performance.

Novel Bi2Te3/graphene quantum dots (Bi2Te3/GQDs) hybrid nanosheets with a unique structure that GQDs are homogeneously embedded in the Bi2Te3 nanosheet matrix have been synthesized by a simple solution-based synthesis strategy. A significantly reduced thermal conductivity and enhanced powder factor are observed in the Bi2Te3/GQDs hybrid nanosheets, which is ascribed to the optimized thermoelectric transport properties of the Bi2Te3/GQDs interface. Furthermore, by varying the size of the GQDs, the thermoelectric performance of Bi2Te3/GQDs hybrid nanostructures could be further enhanced, which could be attributed to the optimization of the density and dispersion manner of the GQDs in the Bi2Te3 matrix. A maximum ZT of 0.55 is obtained at 425 K for the Bi2Te3/GQDs-20 nm, which is higher than that of Bi2Te3 without hybrid nanostrucure. This work provides insights for the structural design and synthesis of Bi2Te3-based hybrid thermoelectric materials, which will be important for future development of broadly functional material systems.

Mesoporous and carbon hybrid structures from layered molecular precursors for Li-ion battery application: the case of ß-In2S3.

A new method was demonstrated to construct mesoporous and carbon hybrid structures of ß-In2S3 from the thermal decomposition of layered molecular precursors. When applied to LIBs, they all exhibit good cycling stability and excellent rate performance due to the great uniformity of mesopores and pyrolysis carbon distributed in the materials.

Cascading Boost Effect on the Capacity of Nitrogen-Doped Graphene Sheets for Li- and Na-Ion Batteries.

Specific capacity and cyclic performance are critically important for the electrode materials of rechargeable batteries. Herein, a capacity boost effect of Li- and Na-ion batteries was presented and clarified by nitrogen-doped graphene sheets. The reversible capacities progressively increased from 637.4 to 1050.4 mAh g-1 (164.8% increase) in Li-ion cell tests from 20 to 185 cycles, and from 187.3 to 247.5 mAh g-1 (132.1% increase) in Na-ion cell tests from 50 to 500 cycles. The mechanism of the capacity boost is proposed as an electrochemical induced cascading evolution of graphitic N to pyridinic and/or pyrrolic N, during which only these graphitic N adjacent pyridinic or pyrrolic structures can be taken precedence. The original and new generated pyridinic and pyrrolic N have strengthened binding energies to Li/Na atoms, thus increased the Li/Na coverage and delivered a progressive capacity boost with cycles until the entire favorable graphitic N transform into pyridinic and pyrrolic N.

Facilitated charge transport in ternary interconnected electrodes for flexible supercapacitors with excellent power characteristics.

Flexible and high performance supercapacitors are very critical in modern society. In order to develop the flexible supercapacitors with high power density, free-standing and flexible three-dimensional graphene/carbon nanotubes/MnO2 (3DG/CNTs/MnO2) composite electrodes with interconnected ternary 3D structures were fabricated, and the fast electron and ion transport channels were effectively constructed in the rationally designed electrodes. Consequently, the obtained 3DG/CNTs/MnO2 composite electrodes exhibit superior specific capacitance and rate capability compared to 3DG/MnO2 electrodes. Furthermore, the 3DG/CNTs/MnO2 based asymmetric supercapacitor demonstrates the maximum energy and power densities of 33.71 W h kg(-1) and up to 22,727.3 W kg(-1), respectively. Moreover, the asymmetric supercapacitor exhibits excellent cycling stability with 95.3% of the specific capacitance maintained after 1000 cycle tests. Our proposed synthesis strategy to construct the novel ternary 3D structured electrodes can be efficiently applied to other high performance energy storage/conversion systems.