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1.
Phys Rev Lett ; 130(11): 111002, 2023 Mar 17.
Artigo em Inglês | MEDLINE | ID: mdl-37001110

RESUMO

A novel analysis is performed, incorporating time-of-flight (TOF) information to study the interactions of dark matter (DM) with standard model particles. After supernova (SN) explosions, DM with mass m_{χ}≲O(MeV) in the halo can be boosted by SN neutrinos (SNν) to relativistic speed. The SNν boosted DM (BDM) arrives on Earth with TOF which depends only on m_{χ} and is independent of the cross section. These BDMs can interact with detector targets in low-background experiments and manifest as afterglow events after the arrival of SNν. The characteristic TOF spectra of the BDM events can lead to large background suppression and unique determination of m_{χ}. New cross section constraints on sqrt[σ_{χe}σ_{χν}] are derived from SN1987a in the Large Magellanic Cloud with data from the Kamiokande and Super-Kamiokande experiments. Potential sensitivities for the next galactic SN with Hyper-Kamiokande are projected. This analysis extends the existing bounds on sqrt[σ_{χe}σ_{χν}] over a broad range of r_{χ}=σ_{χν}/σ_{χe}. In particular, the improvement is by 1-3 orders of magnitude for m_{χ}

2.
J Phys Chem A ; 125(17): 3614-3621, 2021 May 06.
Artigo em Inglês | MEDLINE | ID: mdl-33885302

RESUMO

Dronpa, a GFP (green fluorescent protein)-like fluorescent protein, allows its fluorescent and nonfluorescent states to be switched to each other reversibly by light or heat through E-Z isomerization of the GFP chromophore. In this article, a GFP chromophore (p-HBDI) in water is used as a model to explore this E-Z isomerization mechanism. Based on the experimental solvent isotope effect (kH2O/kD2O = 2.30), the E-Z isomerization of p-HBDI in water is suggested to go through the remote-proton-dissociation-regulated direct mechanism with a proton transfer in the rate-determining step. The fractionation factor (ϕ) of the water-associated phenol proton of p-HBDI in the transition state is found to be 0.43, which is exactly in the range of 0.1-0.6 for the fractionation factor (ϕ) of the transferring proton in the transition state of R2O···H···O+H2 in water. This means that the phenol proton of E-p-HBDI in the transition state is on the way to the associated water oxygen during the E-Z isomerization. The proton dissociation from the phenol group of p-HBDI remotely regulates its E-Z isomerization. Less proton dissociation from the phenol group (pKa = 8.0) at pH = 1-4 results in a modest reduction in the E-Z isomerization rate of p-HBDI, while complete proton dissociation from the phenol group at pH = 11-12 also reduces its E-Z isomerization rate by one order of magnitude because of the larger charge separation in the transition state of the p-HBDI anion. All of these results are consistent with the remote-proton-dissociation-regulated direct mechanism but against the water-assisted addition/elimination mechanism.


Assuntos
Compostos de Benzilideno/química , Proteínas de Fluorescência Verde/química , Imidazóis/química , Fenóis/química , Prótons , Compostos de Benzilideno/efeitos da radiação , Imidazóis/efeitos da radiação , Modelos Químicos , Estrutura Molecular , Fenóis/efeitos da radiação , Estereoisomerismo , Raios Ultravioleta
3.
ACS Nano ; 16(2): 2369-2380, 2022 Feb 22.
Artigo em Inglês | MEDLINE | ID: mdl-35099945

RESUMO

To realize the quantum anomalous Hall effect (QAHE) at elevated temperatures, the approach of magnetic proximity effect (MPE) was adopted to break the time-reversal symmetry in the topological insulator (Bi0.3Sb0.7)2Te3 (BST) based heterostructures with a ferrimagnetic insulator europium iron garnet (EuIG) of perpendicular magnetic anisotropy. Here we demonstrate large anomalous Hall resistance (RAHE) exceeding 8 Ω (ρAHE of 3.2 µΩ·cm) at 300 K and sustaining to 400 K in 35 BST/EuIG samples, surpassing the past record of 0.28 Ω (ρAHE of 0.14 µΩ·cm) at 300 K. The large RAHE is attributed to an atomically abrupt, Fe-rich interface between BST and EuIG. Importantly, the gate dependence of the AHE loops shows no sign change with varying chemical potential. This observation is supported by our first-principles calculations via applying a gradient Zeeman field plus a contact potential on BST. Our calculations further demonstrate that the AHE in this heterostructure is attributed to the intrinsic Berry curvature. Furthermore, for gate-biased 4 nm BST on EuIG, a pronounced topological Hall effect-like (THE-like) feature coexisting with AHE is observed at the negative top-gate voltage up to 15 K. Interface tuning with theoretical calculations has realized topologically distinct phenomena in tailored magnetic TI-based heterostructures.

4.
Nanomaterials (Basel) ; 10(8)2020 Aug 02.
Artigo em Inglês | MEDLINE | ID: mdl-32748811

RESUMO

The role of an atomic-layer thick periodic Y-O array in inducing the epitaxial growth of single-crystal hexagonal YAlO3 perovskite (H-YAP) films was studied using high-angle annular dark-field and annular bright-field scanning transmission electron microscopy in conjunction with a spherical aberration-corrected probe and in situ reflection high-energy electron diffraction. We observed the Y-O array at the interface of amorphous atomic layer deposition (ALD) sub-nano-laminated (snl) Al2O3/Y2O3 multilayers and GaAs(111)A, with the first film deposition being three cycles of ALD-Y2O3. This thin array was a seed layer for growing the H-YAP from the ALD snl multilayers with 900 °C rapid thermal annealing (RTA). The annealed film only contained H-YAP with an excellent crystallinity and an atomically sharp interface with the substrate. The initial Y-O array became the bottom layer of H-YAP, bonding with Ga, the top layer of GaAs. Using a similar ALD snl multilayer, but with the first film deposition of three ALD-Al2O3 cycles, there was no observation of a periodic atomic array at the interface. RTA of the sample to 900 °C resulted in a non-uniform film, mixing amorphous regions and island-like H-YAP domains. The results indicate that the epitaxial H-YAP was induced from the atomic-layer thick periodic Y-O array, rather than from GaAs(111)A.

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