Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors.

Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs). However, it remains challenging to integrate ultrathin and uniform high-κ dielectrics on 2D semiconductors to fabricate FETs with large gate capacitance. We report a versatile two-step approach to integrating high-quality dielectric film with sub-1 nm equivalent oxide thickness (EOT) on 2D semiconductors. Inorganic molecular crystal Sb2O3 is homogeneously deposited on 2D semiconductors as a buffer layer, which forms a high-quality oxide-to-semiconductor interface and offers a highly hydrophilic surface, enabling the integration of high-κ dielectrics via atomic layer deposition. Using this approach, we can fabricate monolayer molybdenum disulfide-based FETs with the thinnest EOT (0.67 nm). The transistors exhibit an on/off ratio of over 106 using an ultra-low operating voltage of 0.4 V, achieving unprecedently high gating efficiency. Our results may pave the way for the application of 2D materials in low-power ultrascaling electronics.

An Ultrathin Inorganic Molecular Crystal Interfacial Layer for Stable Zn Anode.

Zn metal anode suffers from dendrite growth and side reactions during cycling, significantly deteriorating the lifespan of aqueous Zn metal batteries. Herein, we introduced an ultrathin and ultra-flat Sb2 O3 molecular crystal layer to stabilize Zn anode. The in situ optical and atomic force microscopes observations show that such a 10 nm Sb2 O3 thin layer could ensure uniform under-layer Zn deposition with suppressed tip growth effect, while the traditional WO3 layer undergoes an uncontrolled up-layer Zn deposition. The superior regulation capability is attributed to the good electronic-blocking ability and low Zn affinity of the molecular crystal layer, free of dangling bonds. Electrochemical tests exhibit Sb2 O3 layer can significantly improve the cycle life of Zn anode from 72 h to 2800 h, in contrast to the 900 h of much thicker WO3 even in 100 nm. This research opens up the application of inorganic molecular crystals as the interfacial layer of Zn anode.

Giant Tunability of Charge Transport in 2D Inorganic Molecular Crystals by Pressure Engineering.

The unique intermolecular van der Waals force in emerging two-dimensional inorganic molecular crystals (2DIMCs) endows them with highly tunable structures and properties upon applying external stimuli. Using high pressure to modulate the intermolecular bonding, here we reveal the highly tunable charge transport behavior in 2DIMCs for the first time, from an insulator to a semiconductor. As pressure increases, 2D α-Sb2 O3 molecular crystal undergoes three isostructural transitions, and the intermolecular bonding enhances gradually, which results in a considerably decreased band gap by 25 % and a greatly enhanced charge transport. Impressively, the in situ resistivity measurement of the α-Sb2 O3 flake shows a sharp drop by 5 orders of magnitude in 0-3.2 GPa. This work sheds new light on the manipulation of charge transport in 2DIMCs and is of great significance for promoting the fundamental understanding and potential applications of 2DIMCs in advanced modern technologies.

Suppression of Persistent Photoconductivity of Rubrene Crystals using Gate-Tunable Rubrene/Bi2 Se3 Diodes with Photoinduced Negative Differential Resistance.

Organic single-crystalline semiconductors show great potential in high-performance photodetectors. However, they suffer from persistent photoconductivity (PPC) due to the charge trapping, which has severely hindered high-speed imaging applications. Here, a universal strategy of solving the PPC by integrating with topological insulator Bi2 Se3 is provided. The rubrene/Bi2 Se3 heterojunctions are selected as an example for general demonstration due to the reproducibly high mobility and broad optoelectronic applications of rubrene crystals. By virtue of high carrier concentration on Bi2 Se3 surface and the strong built-in electrical field, the photoresponse of the heterotransistor is significantly reduced for more than two orders (from over 10 s to 54 ms), meanwhile the photoresponsivity can reach 124 A W-1 . To the best of knowledge, this operating speed is among the fastest responses in organic-inorganic heterojunctions. The heterotransistor also shows unique negative differential resistance under positive gate bias, which can be explained by photoinduced de-trapping of electron trap states in the bulk rubrene crystals. Besides, the rubrene/Bi2 Se3 heterojunction behaves as a gate-tunable backward-like diode due to the inhomogenous carrier distribution in the thick rubrene crystal and inversion of relative Fermi level positions. The findings demonstrate versatile functionalities of the rubrene/Bi2 Se3 heterojunctions for various emerging optoelectronic applications.

Atomically Thin Oxyhalide Solar-Blind Photodetectors.

2D wide-bandgap semiconductors demonstrate great potential in fabricating solar-blind ultraviolet (SBUV) photodetectors. However, the low responsivity of 2D solar-blind photodetectors still limits their practical applications. Here, high-responsivity solar-blind photodetectors are achieved based on 2D bismuth oxychloride (BiOCl) flakes. The 2D BiOCl photodetectors exhibit a responsivity up to 35.7 A W-1 and a specific detectivity of 2.2 × 1010 Jones under 250 nm illumination with 17.8 µW cm-2 power density. In particular, the enhanced photodetective performances are demonstrated in BiOCl photodetectors with increasing ambient temperature. Surprisingly, their responsivity can reach 2060 A W-1 at 450 K under solar-blind light illumination, maybe owing to the formation of defective BiOCl grains evidenced by in situ transmission electron microscopy. The high responsivity throughout the solar-blind range indicates that 2D BiOCl is a promising candidate for SBUV detection.

2D Metal Chalcogenides for IR Photodetection.

Infrared (IR) photodetectors are finding diverse applications in imaging, information communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing interest in view of their unique structures and extraordinary physical properties. They have demonstrated outstanding IR detection performance including high responsivity and detectivity, high on/off ratio, fast response rate, stable room temperature operability, and good mechanical flexibility, which has opened up a new prospect in next-generation IR photodetectors. This Review presents a comprehensive summary of recent progress in advanced IR photodetectors based on 2DMCs. The rationale of the photodetectors containing photocurrent generation mechanisms and performance parameters are briefly introduced. The device performances of 2DMCs-based IR photodetectors are also systematically summarized, and some representative achievements are highlighted as well. Finally, conclusions and outlooks are delivered as a guideline for this thriving field.

Tailoring Strain and Morphology of Core-Shell SiGe Nanowires by Low-Temperature Ge Condensation.

Selective oxidation of the silicon element of silicon germanium (SiGe) alloys during thermal oxidation is a very important and technologically relevant mechanism used to fabricate a variety of microelectronic devices. We develop here a simple integrative approach involving vapor-liquid-solid (VLS) growth followed by selective oxidation steps to the construction of core-shell nanowires and higher-level ordered systems with scalable configurations. We examine the selective oxidation/condensation process under nonequilibrium conditions that gives rise to spontaneous formation of core-shell structures by germanium condensation. We contrast this strategy that uses reaction-diffusion-segregation mechanisms to produce coherently strained structures with highly configurable geometry and abrupt interfaces with growth-based processes which lead to low strained systems with nonuniform composition, three-dimensional morphology, and broad core-shell interface. We specially focus on SiGe core-shell nanowires and demonstrate that they can have up to 70% Ge-rich shell and 2% homogeneous strain with core diameter as small as 14 nm. Key elements of the building process associated with this approach are identified with regard to existing theoretical models. Moreover, starting from results of ab initio calculations, we discuss the electronic structure of these novel nanostructures as well as their wide potential for advanced device applications.

Emerging van der Waals Dielectrics of Inorganic Molecular Crystals for 2D Electronics.

In the landscape of continuous downscaling metal-oxide-semiconductor field-effect transistors, two-dimensional (2D) semiconductors with atomic thinness emerge as promising channel materials for ultimate scaled devices. However, integrating compatible dielectrics with 2D semiconductors, particularly in a scalable way, remains a critical challenge that hinders the development of 2D devices. Recently, 2D inorganic molecular crystals (IMCs), which are free of dangling bonds and possess excellent dielectric properties and simplicity for scalable fabrication, have emerged as alternatives for gate dielectric integration in 2D devices. In this Perspective, we start with the introduction of structure and synthesis methods of IMCs and then discuss the explorations of using IMCs as the dielectrics, as well as some remaining relevant issues to be unraveled. Moreover, we look at the future opportunities of IMC dielectrics in 2D devices both for practical applications and fundamental research.

Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook.

2D semiconductors have emerged both as an ideal platform for fundamental studies and as promising channel materials in beyond-silicon field-effect-transistors due to their outstanding electrical properties and exceptional tunability via external field. However, the lack of proper dielectrics for 2D semiconductors has become a major roadblock for their further development toward practical applications. The prominent issues between conventional 3D dielectrics and 2D semiconductors arise from the integration and interface quality, where defect states and imperfections lead to dramatic deterioration of device performance. In this review article, the root causes of such issues are briefly analyzed and recent advances on some possible solutions, including various approaches of adapting conventional dielectrics to 2D semiconductors, and the development of novel dielectrics with van der Waals surface toward high-performance 2D electronics are summarized. Then, in the perspective, the requirements of ideal dielectrics for state-of-the-art 2D devices are outlined and an outlook for their future development is provided.

Building intercalation structure for high ionic conductivity via aliovalent substitution.

Two-dimensional (2D) materials, which possess robust nanochannels, high flux and allow scalable fabrication, provide new platforms for nanofluids. Highly efficient ionic conductivity can facilitate the application of nanofluidic devices for modern energy conversion and ionic sieving. Herein, we propose a novel strategy of building an intercalation crystal structure with negative surface charge and mobile interlamellar ions via aliovalent substitution to boost ionic conductivity. The Li2xM1-xPS3 (M = Cd, Ni, Fe) crystals obtained by the solid-state reaction exhibit distinct capability of water absorption and apparant variation of interlayer spacing (from 0.67 to 1.20 nm). The assembled membranes show the ultrahigh ionic conductivity of 1.20 S/cm for Li0.5Cd0.75PS3 and 1.01 S/cm for Li0.6Ni0.7PS3. This facile strategy may inspire the research in other 2D materials with higher ionic transport performance for nanofluids.

Emerging Two-Dimensional Inorganic Molecular Crystals: The Concept and Beyond.

The concept of two-dimensional (2D) inorganic molecular crystals (IMCs) was first introduced by Zhai and coauthors in 2019. In contrast to the layered structures of graphene-like 2D materials, 2D IMCs consist of tiny inorganic molecules bonded together through all-around van der Waals (vdW) interactions. Their structural peculiarities lead to some special behaviors and appealing properties in their synthesis and applications. In this Perspective, we first introduce the concept of 2D IMCs and present the very first synthesis of 2D IMCs using a surface-passivated growth approach. The special intermolecular effects between the inorganic molecules are also summarized. In addition, because of its molecular structure, a vdW film of IMCs can be facilely fabricated, which exhibits appealing potential in integrated 2D devices. More importantly, we give a general outlook for the further development of 2D IMCs with the goal of attracting more attention to this emerging research frontier.

A Shift from Efficiency to Adaptability: Recent Progress in Biomimetic Interactive Soft Robotics in Wet Environments.

Research field of soft robotics develops exponentially since it opens up many imaginations, such as human-interactive robot, wearable robots, and transformable robots in unpredictable environments. Wet environments such as sea and in vivo represent dynamic and unstructured environments that adaptive soft robots can reach their potentials. Recent progresses in soft hybridized robotics performing tasks underwater herald a diversity of interactive soft robotics in wet environments. Here, the development of soft robots in wet environments is reviewed. The authors recapitulate biomimetic inspirations, recent advances in soft matter materials, representative fabrication techniques, system integration, and exemplary functions for underwater soft robots. The authors consider the key challenges the field faces in engineering material, software, and hardware that can bring highly intelligent soft robots into real world.

Scalable Van der Waals Encapsulation by Inorganic Molecular Crystals.

Encapsulation is critical for devices to guarantee their stability and reliability. It becomes an even more essential requirement for devices based on 2D materials with atomic thinness and far inferior stability compared to their bulk counterparts. Here a general van der Waals (vdW) encapsulation method for 2D materials using Sb2 O3 layer of inorganic molecular crystal fabricated via thermal evaporation deposition is reported. It is demonstrated that such a scalable encapsulation method not only maintains the intrinsic properties of typical air-susceptible 2D materials due to their vdW interactions but also remarkably improves their environmental stability. Specifically, the encapsulated black phosphorus (BP) exhibits greatly enhanced structural stability of over 80 days and more sustaining-electrical properties of 19 days, while the bare BP undergoes degradation within hours. Moreover, the encapsulation layer can be facilely removed by sublimation in vacuum without damaging the underlying materials. This scalable encapsulation method shows a promising pathway to effectively enhance the environmental stability of 2D materials, which may further boost their practical application in novel (opto)electronic devices.

Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution.

Strain engineering is a promising method for tuning the electronic properties of two-dimensional (2D) materials, which are capable of sustaining enormous strain thanks to their atomic thinness. However, applying a large and homogeneous strain on these 2D materials, including the typical semiconductor MoS2, remains cumbersome. Here we report a facile strategy for the fabrication of highly strained MoS2 via chalcogenide substitution reaction (CSR) of MoTe2 with lattice inheritance. The MoS2 resulting from the sulfurized MoTe2 sustains ultra large in-plane strain (approaching its strength limit ~10%) with great homogeneity. Furthermore, the strain can be deterministically and continuously tuned to ~1.5% by simply varying the processing temperature. Thanks to the fine control of our CSR process, we demonstrate a heterostructure of strained MoS2/MoTe2 with abrupt interface. Finally, we verify that such a large strain potentially allows the modulation of MoS2 bandgap over an ultra-broad range (~1 eV). Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices.

2D Cu9 S5 /PtS2 /WSe2 Double Heterojunction Bipolar Transistor with High Current Gain.

Bipolar junction transistor (BJT) as one important circuit element is now widely used in high-speed computation and communication for its capability of high-power signal amplification. 2D materials and their heterostructures are promising in building high-amplification and high-frequency BJTs because they can be naturally thin and highly designable in tailoring components properties. However, currently the low emitter injection efficiency results in only moderate current gain achieved in the pioneer researches, severely restraining its future development. Herein, it is shown that an elaborately designed double heterojunction bipolar transistor (DHBT) can greatly promote the injection efficiency, improving the current gain by order of magnitude. In this DHBT high-doping-density wide-bandgap 2D Cu9 S5 is used as emitter and narrow-bandgap PtS2 as base. This heterostructure efficiently suppresses the reverse electron flux from base and increase the injection efficiency. Consequently, the DHBT achieves an excellent current gain (ß ≈ 910). This work systematically explores the electrical behavior of 2D materials based DHBT, and provides deep insight of the architecture design for building high gain DHBT, which may promote the applications of 2Dheterojunctions in the fields of integrated circuits.

Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse.

Broken-gap van der Waals (vdW) heterojunctions based on 2D materials are promising structures to fabricate high-speed switching and low-power multifunctional devices thanks to its charge transport versus quantum tunneling mechanism. However, the tunneling current is usually generated under both positive and negative bias voltage, resulting in small rectification and photocurrent on/off ratio. In this paper, we report a broken-gap vdW heterojunction PtS2/WSe2 with a bilateral accumulation region design and a big band offset by utilizing thick PtS2 as an effective carrier-selective contact, which exhibits an ultrahigh reverser rectification ratio approaching 108 and on/off ratio over 108 at room temperature. We also find excellent photodetection properties in such a heterodiode with a large photocurrent on/off ratio over 105 due to its ultralow forward current and a comparable photodetectivity of 3.8 × 1010 Jones. In addition, the response time of such a photodetector reaches 8 µs owing to the photoinduced tunneling mechanism and reduced interface trapping effect. The proposed heterojunction not only demonstrates the high-performance broken-gap heterodiode but also provides in-depth understanding of the tunneling mechanism in the development of future electronic and optoelectronic applications.

Novel glycoside hydrolases identified by screening a Chinese Holstein dairy cow rumen-derived metagenome library.

One clone encoding glycoside hydrolases was identified through functional screening of a rumen bacterial artificial chromosome (BAC) library. Of the 68 open reading frames (ORFs) predicted, one ORF encodes a novel endo-ß-1,4-xylanase with two catalytic domains of family GH43 and two cellulose-binding modules (CBMs) of family IV. Partial characterization showed that this endo-xylanase has a greater specific activity than a number of other xylanases over a wide temperature range at neutral pH and could be useful in some industrial applications.

Isolation and biochemical characterization of two lipases from a metagenomic library of China Holstein cow rumen.

Two novel lipase genes RlipE1 and RlipE2 which encoded 361- and 265-amino acid peptides, respectively, were recovered from a metagenomic library of the rumen microbiota of Chinese Holstein cows. A BLAST search revealed a high similarity (90%) between RlipE2 and a carboxylesterase from Thermosinus carboxydivorans Nor1, while there was a low similarity (below 50%) between RlipE1 and other lipases. Phylogenetic analysis indicated that RlipE2 clustered with the lipolytic enzymes from family V while RlipE1 clustered with six other putative bacterial lipases which might constitute a new subfamily. The recombinant lipases were thermally unstable and retained 60% activity over a pH range of 6.5-8.5. Substrate specificity assay indicated that both enzymes had higher hydrolytic activity toward laurate (C(12)), palmitate (C(16)) and stearate (C(18)). The novel phylogenetic affiliation and high specificity of both enzymes for long-chain fatty acid make them interesting targets for manipulation of rumen lipid metabolism.

[Effects of exogenous nitric oxide on chlorophyll in cadmium-induced tomato seedlings].

Cadmium (Cd) is an important heavy metal pollution, and NO is a bioactive molecule, which was found to participate in the reaction of plant to Cd. Leaves from tomato seedlings pretreated with 100 micromol x L(-1) sodium nitroprusside (SNP, as NO donor) 1 day prior to being treated with 50 micromol x L(-1) Cd for 7 days were used as materials, and chloroplasts were isolated from the leaves to study the effects of NO on the spectroscopic characteristics of chlorophyll. The results of absorption spectra of chloroplasts showed that NO alleviated the effects of Cd on absorption spectra of chloroplast by raising the relative absorbance at 436 nm, 480 nm and 470 nm, which caused lower contents of carotinoid and chlorophyll. Fluorescence emission spectra of chloroplasts indicated that NO alleviated effect of Cd, and the relative absorbance at 686 nm and 734 nm decreased 17% and 10% respectively, while they decreased 33% and 23% respectively in chloroplasts treated with Cd. DCPIP analysis results showed that NO alleviated the inhibition of photosynthetic electron transport by Cd, and consequently the electron transport rate reached the same level of control.

[Application of near-infrared spectroscopy to quality detection of milk and its products].

Milk and its products as a kind of ideal comprehensive nutritional food, has becoming an indispensable part of people's daily, life. But at the same time, the quality of dairy products has been also increasingly concerned by consumers. Real-time, rapid and accurate detection of milk and its products in terms of component, adulterants, residues and preservatives is the primary condition for improving the dairy products quality and controlling the production process. Quality predication of milk and its products was often completed by laboratory analysis in the past, which was complicated and time-consuming and could not satisfy the needs for evaluating the milk products quality and monitoring the production proceeding effectively. How to predict the quality of milk and its products quickly and accurately is a practical problem that needs to be resolved. Near-infrared spectroscopy (NIRS) is a rapid, convenient, highly efficient, non-destructive and low-cost analytical technique, which has been widely used in various fields for quantitative and qualitative analysis. As a new analysis technique, NIRS has great potential of application to milk and its products detection, owning to its quick, concise and non--destructive characteristics. The main nutrient components were the major index of milk and its products quality evaluation. Determining the main nutrient components of milk and its products rapidly can provide sound basis for evaluating the products quality. At the same time, adulterants, residues and preservatives were also distinct fingerprint characteristics in the NIR spectra just like the main nutrient components. So this new approaches could also be used in quality distinguishing and on-line detection of milk and its products. Many researches have also concluded that NIRS technology has good stability and high prediction ability on dairy products analysis, exhibites well correlation with the result by labor analysis method. In the present paper, the principles and advantages of NIRS were described. The research advancement of NIRS utilization for milk products nutrient component determination, quality estimation and on-line detection and the application prospect were comprehensively reviewed. With the development of spectral technique, the prediction model gained through NIRS will be more and more reliable and practicable, and the NIRS technique will be more widely used in milk and its products determination, quality estimation and on-line detection.