RESUMO
A series of two-dimensional (2D) single-layer binary group VA-VA crystals, where VA represents P, As, Sb and Bi, are explored by the first-principles calculations. Unlike the orthorhombic α-phase and hexagonal ß-phase, these crystals have a tetragonal haeckelite lattice and are named as T-VA-VAs. These ultrathin 2D materials have high thermal stability and are semiconductors with moderate band gaps ranging from 0.80 to 2.68 eV (HSE06). The band gaps show a prevalent linear correlation with average ionization energies (AIEs) of different composites, and thus can be effectively designed. Furthermore, these materials exhibit superior carrier mobility, e.g. 2.96 × 103 cm-2 V-1 s-1 of T-SbBi, and considerable visible light absorption index. These novel 2D binary materials are expected to be fabricated and used as nanoelectronics and for solar energy harvesting.
RESUMO
The title compound, C(16)H(14)Cl(2)O(4)S, was obtained by the reaction of eugenol (4-allyl-2-meth-oxy-phenol) and 3,4-dichloro-benzene-sulfonyl chloride. The dihedral angle between the benzene rings in the mol-ecule is 40.53â (4)°. No significantly short inter-molecular contacts are observed in the crystal structure.