Observation and enhancement through alkali metal doping of p-type conductivity in the layered oxyselenides Sr2ZnO2Cu2Se2 and Ba2Zn1-x O2-x Cu2Se2.

The optoelectronic properties of two layered copper oxyselenide compounds, with nominal composition Sr2ZnO2Cu2Se2 and Ba2ZnO2Cu2Se2, have been investigated to determine their suitability as p-type conductors. The structure, band gaps and electrical conductivity of pristine and alkali-metal-doped samples have been determined. We find that the strontium-containing compound, Sr2ZnO2Cu2Se2, adopts the expected tetragonal Sr 2 Mn 3 SbO 2 structure with I4/mmm symmetry, and has a band gap of 2.16 eV, and a room temperature conductivity of 4.8 × 10-1 S cm-1. The conductivity of the compound could be increased to 4.2 S cm-1 when sodium doped to a nominal composition of Na0.1Sr1.9ZnO2Cu2Se2. In contrast, the barium containing material was found to have a small zinc oxide deficiency, with a sample dependent compositional range of Ba2Zn1-x O2-x Cu2Se2 where 0.01 < x < 0.06, as determined by single crystal X-ray diffraction and powder neutron diffraction. The barium-containing structure could also be modelled using the tetragonal I4/mmm structure, but significant elongation of the oxygen displacement ellipsoid along the Zn-O bonds in the average structure was observed. This indicated that the oxide ion position was better modelled as a disordered split site with a displacement to change the local zinc coordination from square planar to linear. Electron diffraction data confirmed that the oxide site in Ba2Zn1-x O2-x Cu2Se2 does not adopt a long range ordered arrangement, but also that the idealised I4/mmm structure with an unsplit oxide site was not consistent with the extra reflections observed in the electron diffractograms. The band gap and conductivity of Ba2Zn1-x O2-x Cu2Se2 were determined to be 2.22 eV and 2.0 × 10-3 S cm-1 respectively. The conductivity could be increased to 1.5 × 10-1 S cm-1 with potassium doping in K0.1Ba1.9Zn1-x O2-x Cu2Se2. Hall measurements confirmed that both materials were p-type conductors with holes as the dominant charge carriers.

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb2Te3 Microstructures.

Doped Sb2Te3 narrow-band-gap semiconductors have been attracting considerable attention for different electronic and thermoelectric applications. Trivalent samarium (Sm)- and indium (In)-doped Sb2Te3 microstructures have been synthesized by the economical solvothermal method. Powder X-ray diffraction (PXRD) was used to verify the synthesis of single-phase doped and undoped Sb2Te3 and doping of Sm and In within the crystal lattice of Sb2Te3. Further, the morphology, structure elucidation, and stability have been investigated systematically by scanning electron microscopy (SEM), Raman analysis, and thermogravimetric analysis (TGA). These analyses verified the successful synthesis of hexagonal undoped Sb2Te3 (AT) and (Sm, In)-doped Sb2Te3 (SAT, IAT) microstructures. Moreover, the comparison of dielectric parameters, including dielectric constant, dielectric loss, and tan loss of AT, SAT, and IAT, was done in detail. An increment in the electrical conductivities, both AC and DC, from 1.92 × 10-4 to 4.9 × 10-3 Ω-1 m-1 and a decrease in thermal conductivity (0.68-0.60 W m-1 K-1) were observed due to the doping by trivalent (Sm, In) dopants. According to our best knowledge, the synthesis and dielectric properties of (Sm, In)-doped and undoped Sb2Te3 in comparison with their electrical properties and thermal conductivity have not been reported earlier. This implies that appropriate doping with (Sm, In) in Sb2Te3 is promising to enhance the electronic and thermoelectric behavior.

Correction: Investigation of factors affecting the stability of compounds formed by isovalent substitution in layered oxychalcogenides, leading to identification of Ba3Sc2O5Cu2Se2, Ba3Y2O5Cu2Se2, Ba3Sc2O5Ag2Se2 and Ba3In2O5Ag2Se2.

[This corrects the article DOI: 10.1039/D1TC05051F.].

Development and Investigation of High Performance PVA/NiO and PVA/CuO Nanocomposites with Improved Physical, Dielectric and Mechanical Properties.

A series of polyvinyl alcohol (PVA)based composites with well dispersed nano fillers were fabricated and compared in terms of dielectric, mechanical, and optical properties. Specifically, NiO and CuO nano-fillers were utilized in a range of 0.2-0.6 wt% for thin film fabrication by solution deposition method. The characterization of nanocomposites was confirmed through FTIR, FESEM, and XRPD, whereas dielectric and mechanical properties were analyzed with respect to the filler concentrations. The bandgap of PVA/nano-filler composites reduced with an increase in NiO and CuO concentration from 0.2 to 0.6 wt%. The increase in the permittivity of the material was observed for 6 wt% of nano-fillers. The toughness of PVA/nano-filler composites was improved by increasing CuO and NiO concentration and Young's modulus of 30.9 and 27.2 MPa for 0.6 wt% of NiO and CuO-based nanocomposite, respectively, was observed. The addition of nano-fillers showed improved optical, dielectric, and mechanical properties.

A Sequenced Study of Improved Dielectric Properties of Carbon Nanotubes and Metal Oxide-Reinforced Polymer Composites.

Polymers have gained attraction at the industrial level owing to their elastic and lightweight nature, as well as their astonishing mechanical and electrical applications. Their scope is limited due to their organic nature, which eventually leads to the degradation of their properties. The aim of this work was to produce polymer composites with finely dispersed metal oxide nanofillers and carbon nanotubes (CNTs) for the investigation of their charge-storage applications. This work reports the preparation of different polymeric composites with varying concentrations of metal oxide (MO) nanofillers and single-walled carbon nanotubes (SWCNTs). The successful synthesis of nanofillers (i.e., NiO and CuO) was carried out via the sonication and precipitation methods, respectively. After, the smooth and uniform polymeric composite thin films were prepared via the solution-casting methodology. Spectroscopy and diffraction techniques were used for the preliminary characterization. Scanning electron microscopy was used to check the dispersion of carbon nanotubes (CNTs) and MOs in the polymer matrix. The addition of nanofillers and carbon nanotubes (CNTs) tuned the bandgap, reduced the strain, and enhanced the elastic limit of the polymer. The addition of CNT enhanced the mechanical strength of the composite; however, it increased the conductivity, which was tuned by using metal oxides. By increasing the concentration of NiO and CuO from 2% to 6% bandgap of PVA, which is 5-6 eV reduced to 4.41 and 4.34 eV, Young's moduli of up to 59 and 57.7 MPa, respectively, were achieved. Moreover, improved dielectric properties were achieved, which shows that the addition of metal oxide enhances the dielectric behavior of the material.

Investigation of factors affecting the stability of compounds formed by isovalent substitution in layered oxychalcogenides, leading to identification of Ba3Sc2O5Cu2Se2, Ba3Y2O5Cu2S2, Ba3Sc2O5Ag2Se2 and Ba3In2O5Ag2Se2.

Four novel compositions containing chalcogenide layers, adopting the Ba3M2O5M'2Ch2 layered structure have been identified: Ba3Sc2O5Cu2Se2, Ba3Y2O5Cu2S2, Ba3Sc2O5Ag2Se2 and Ba3In2O5Ag2Se2. A comprehensive comparison of experimental and computational results providing the crystallographic and electronic structure of the compounds under investigation has been conducted. Materials were synthesised at 800 °C under vacuum using a conventional ceramic synthesis route with combination of binary oxide and chalcogenide precursors. We report their structures determined by Rietveld refinement of X-ray powder diffraction patterns, and band gaps determined from optical measurements, which range from 1.44 eV to 3.04 eV. Through computational modelling we can also present detailed band structures and propose that, based on their predicted transport properties, Ba3Sc2O5Ag2Se2 has potential as a visible light photocatalyst and Ba3Sc2O5Cu2Se2 is of interest as a p-type transparent conductor. These four novel compounds are part of a larger series of sixteen compounds adopting the Ba3M2O5M'2Ch2 structure that we have considered, of which approximately half are stable and can be synthesized. Analysis of the compounds that cannot be synthesized from this group allows us to identify why compounds containing either M = La, or silver sulfide chalcogenide layers, cannot be formed in this structure type.

Crystal structure of novel Ni-Zn borides: first observation of a boron-metal nested cage unit: B20Ni6.

The crystal structures of three ternary Ni-Zn borides have been elucidated by means of X-ray single-crystal diffraction (XSC) and X-ray powder diffraction techniques (XPD) in combination with electron microprobe analyses (EMPA) defining the Ni/Zn ratio. Ni(21)Zn(2)B(24) crystallizes in a unique structure type (space group I4/mmm; a = 0.72103(1) nm and c = 1.42842(5) nm; R(F)(2) = 0.017), which contains characteristic isolated cages of B(20) units composed of two corrugated octogonal boron rings, which are linked at four positions via boron atoms. The B(20) units appear to have eight-membered rings on all six faces like the faces of a cube. Each face is centered by a nickel atom. The six nickel atoms are arranged in the form of an octahedron nested within the B(20) unit. Such a boron aggregation is unique and has never been encountered before in metal-boron chemistry. The crystal structure of Ni(12)ZnB(8-x) (x = 0.43; space group Cmca, a = 1.05270(2) nm, b = 1.45236(3) nm, c = 1.45537(3) nm; R(F)(2) = 0.028) adopts the structure type of Ni(12)AlB(8) with finite zigzag chains of five boron atoms. The compound Ni(3)ZnB(2) crystallizes in a unique structure type (space group C2/m, a = 0.95101(4) nm, b = 0.28921(4) nm, c = 0.84366(3) nm, ß = 101.097(3)°, and R(F)(2) = 0.020) characterized by B(4) zigzag chain fragments with B-B bond lengths of 0.183-0.185 nm. The Ni(3)ZnB(2) structure is related to the Dy(3)Ni(2) type.

Direct chemical vapor deposition synthesis of large area single-layer brominated graphene.

Graphene and its derivatives such as functionalized graphene are considered to hold significant promise in numerous applications. Within that context, halogen functionalization is exciting for radical and nucleophilic substitution reactions as well as for the grafting of organic moieties. Historically, the successful covalent doping of sp2 carbon with halogens, such as bromine, was demonstrated with carbon nanotubes. However, the direct synthesis of brominated graphene has thus far remained elusive. In this study we show how large area brominated graphene with C-Br bonds can be achieved directly (i.e. a single step) using hydrogen rich low pressure chemical vapor deposition. The direct synthesis of brominated graphene could lead to practical developments.

Correction: Direct chemical vapor deposition synthesis of large area single-layer brominated graphene.

[This corrects the article DOI: 10.1039/C9RA01152H.].

BaAl4 derivative phases in the sections {La,Ce}Ni2Si2-{La,Ce}Zn2Si2: phase relations, crystal structures and physical properties.

Phase relations and crystal structures have been evaluated within the sections LaNi2Si2-LaZn2Si2 and CeNi2Si2-CeZn2Si2 at 800 °C using electron microprobe analysis and X-ray powder and single crystal structure analyses. Although the systems La-Zn-Si and Ce-Zn-Si at 800 °C do not reveal compounds such as "LaZn2Si2" or "CeZn2Si2", solid solutions {La,Ce}(Ni1-xZnx)2Si2 exist with the Ni/Zn substitution starting from {La,Ce}Ni2Si2 (ThCr2Si2-type; I4/mmm) up to x = 0.18 for Ce(Ni1-xZnx)2Si2 and x = 0.125 for La(Ni1-xZnx)2Si2. For higher Zn-contents 0.25 ≤ x ≤ 0.55 the solutions adopt the CaBe2Ge2-type (P4/nmm). The investigations are backed by single crystal X-ray diffraction data for Ce(Ni0.61Zn0.39)2Si2 (P4/nmm; a = 0.41022(1) nm, c = 0.98146(4) nm; RF = 0.012) and by Rietveld refinement for La(Ni0.56Zn0.44)2Si2 (P4/nmm; a = 0.41680(6) nm, c = 0.99364(4) nm; RF = 0.043). Interestingly, the Ce-Zn-Si system contains a ternary phase CeZn2(Si1-xZnx)2 of the ThCr2Si2 structure type (0.25 ≤ x ≤ 0.30 at 600 °C), which forms peritectically at T = 695 °C but does not include the composition "CeZn2Si2". The primitive high temperature tetragonal phase with the CaBe2Ge2-type has also been observed for the first time in the Ce-Ni-Si system at CeNi2+xSi2-x, x = 0.33 (single crystal data, P4/nmm; a = 0.40150(2) nm, c = 0.95210(2) nm; RF = 0.0163). Physical properties (from 400 mK to 300 K) including specific heat, electrical resistivity and magnetic susceptibility have been elucidated for Ce(Ni0.61Zn0.39)2Si2 and La(Ni0.56Zn0.44)2Si2. Ce(Ni0.61Zn0.39)2Si2 exhibits a Kondo-type ground state. Low temperature specific heat data of La(Ni0.56Zn0.44)2Si2 suggest a spin fluctuation scenario with an enhanced value of the Sommerfeld constant.