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1.
Nanotechnology ; 22(42): 425202, 2011 Oct 21.
Artigo em Inglês | MEDLINE | ID: mdl-21941036

RESUMO

Synthesis of colloidal nanocrystals of II-VI semiconductor materials has been refined in recent decades and their size dependent optoelectronic properties have been well established. Here we report a facile synthesis of CdSe-CdS core-shell heterostructures using a two-step hot injection process. Red-shifts in absorption and photoluminescence spectra show that the obtained quantum dots have quasi-type-II alignment of energy levels. The obtained nanocrystals have a heterostructure with a large and highly faceted tetrahedral CdS shell grown epitaxially over a spherical CdSe core. The obtained morphology as well as high resolution electron microscopy confirms that the tetrahedral shell have a zinc blende crystal structure. A phenomenological mechanism for the growth and morphology of the nanocrystals is discussed.

2.
Opt Express ; 18(2): 1041-8, 2010 Jan 18.
Artigo em Inglês | MEDLINE | ID: mdl-20173925

RESUMO

The pulse evolution in Bi-doped soliton fiber laser with slow and fast saturable absorber has been studied both experimentally and numerically. Semiconductor saturable absorbers with balanced slow and fast absorption recovery mechanisms exhibit a bi-temporal recovery dynamics which permits both reliable start-up of passive mode-locking and short pulse generation and stabilization. The pulse dynamics within the Bi fiber laser cavity have been investigated.


Assuntos
Bismuto/química , Tecnologia de Fibra Óptica/instrumentação , Lasers Semicondutores , Dispositivos Ópticos , Processamento de Sinais Assistido por Computador/instrumentação , Desenho Assistido por Computador , Desenho de Equipamento , Análise de Falha de Equipamento
3.
Opt Lett ; 30(20): 2793-5, 2005 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-16252777

RESUMO

Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 microm thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW.

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