From graphene to graphene oxide: the importance of extended topological defects.

Graphene oxide (GO) represents a complex family of materials related to graphene: easy to produce in large quantities, easy to process, and convenient to use as a basis for further functionalization, with the potential for wide-ranging applications such as in nanocomposites, electronic inks, biosensors and more. Despite their importance, the key structural traits of GO, and the impact of these traits on properties, are still poorly understood due to the inherently berthollide character of GO which complicates the establishment of clear structure/property relationships. Widely accepted structural models of GO frequently neglect the presence of extended topological defects, structural changes to the graphene basal plane that are not removed by reduction methods. Here, a combination of experimental approaches and molecular simulations demonstrate that extended topological defects are a common feature across GO and that the presence of these defects strongly influences the properties of GO. We show that these extended topological defects are produced following even controlled 'gentle' functionalization by atomic oxygen and are comparable to those obtained by a conventional modified Hummers' method. The presence of the extended topological defects is shown to play an important role in the retention of oxygen functional groups after reduction. As an exemplar of their effect on the physical properties, we show that the GO sheets display a dramatic decrease in strength and stiffness relative to graphene and, due to the presence of extended structural defects, no improvement is seen in the mechanical properties after reduction. These findings indicate the importance of extended topological defects to the structure and properties of functionalized graphene, which merits their inclusion as a key trait in simple structural models of GO.

Adsorbate-induced curvature and stiffening of graphene.

The adsorption of the alkane tetratetracontane (TTC, C44H90) on graphene induces the formation of a curved surface stabilized by a gain in adsorption energy. This effect arises from a curvature-dependent variation of a moiré pattern due to the mismatch of the carbon-carbon separation in the adsorbed molecule and the period of graphene. The effect is observed when graphene is transferred onto a deformable substrate, which in our case is the interface between water layers adsorbed on mica and an organic solvent, but is not observed on more rigid substrates such as boron nitride. Our results show that molecular adsorption can be influenced by substrate curvature, provide an example of two-dimensional molecular self-assembly on a soft, responsive interface, and demonstrate that the mechanical properties of graphene may be modified by molecular adsorption, which is of relevance to nanomechanical systems, electronics, and membrane technology.

Covalently Binding Atomically Designed Au9 Clusters to Chemically Modified Graphene.

Atomic-resolution transmission electron microscopy was used to identify individual Au9 clusters on a sulfur-functionalized graphene surface. The clusters were preformed in solution and covalently attached to the surface without any dispersion or aggregation. Comparison of the experimental images with simulations allowed the rotational motion, without lateral displacement, of individual clusters to be discerned, thereby demonstrating a robust covalent attachment of intact clusters to the graphene surface.

Sulfur-functionalized graphene oxide by epoxide ring-opening.

The treatment of graphene oxide (GO) with potassium thioacetate followed by an aqueous work-up yields a new material via the ring-opening of the epoxide groups. The new material is a thiol-functionalized GO (GO-SH) which is able to undergo further functionalization. Reaction with butyl bromide gives another new material, GO-SBu, which shows significantly enhanced thermal stability compared to both GO and GO-SH. The thiol-functionalized GO material showed a high affinity for gold, as demonstrated by the selective deposition of a high density of gold nanoparticles.

Graphene-Based Materials as Strain Sensors in Glass Fiber/Epoxy Model Composites.

The ability of graphene-based materials to act as strain sensors in glass fiber/epoxy model composites by using Raman spectroscopy has been investigated. The strain reporting performance of two types of graphene nanoplatelets (GNPs) was compared with that of graphene produced by chemical vapor deposition (CVD). The strain sensitivity of the thicker GNPs was impeded by their limited aspect ratio and weak interaction between flakes and fibers. The discontinuity of the GNP coating and inconsistency in properties among individual platelets led to scatter in the reported strains. In comparison, continuous and homogeneous CVD grown graphene was more accurate as a strain sensor and suitable for point-by-point strain reporting. The Raman mapping results of CVD graphene and its behavior under cyclic deformation show reversible and reliable strain sensing at low strain levels (up to 0.6% matrix strain), above which interfacial sliding of the CVD graphene layer was observed through an in situ Raman spectroscopic study.

Synthetic 2-D lead tin sulfide nanosheets with tuneable optoelectronic properties from a potentially scalable reaction pathway.

Solventless thermolysis of molecular precursors followed by liquid phase exfoliation allows access to two-dimensional IV-VI semiconductor nanomaterials hitherto unreachable by a scalable processing pathway. Firstly, the use of metal dithiocarbamate precursors to produce bulk alloys in the series Pb1-x Sn x S (0 ≤ x ≤ 1) by thermolysis is demonstrated. The bulk powders are characterised by powder X-ray diffraction (pXRD), Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectroscopy. It was found that there is a transition from cubic structures for the Pb-rich alloys including the end compound, PbS (0 ≤ x ≤ 0.4) to layered orthorhombic structures for Sn-rich alloys and the end compound SnS (0.5 ≤ x ≤ 1.0). A smooth elemental progression from lead-rich to tin-rich monochalcogenides across the series of materials is observed. Liquid phase exfoliation was applied to produce two dimensional (2D) nanosheets for a mixed Pb1-x Sn x S alloy (where x = 0.8) in 1-methyl-2-pyrrolidone (NMP) using the synthetic bulk powder as starting material. The nanosheet products were characterized by SEM, atomic force microscopy (AFM) and high angle annular dark field scanning transmission electron microscopy (HAADF STEM). First principle calculations of Pb1-x Sn x S alloys show that the Sn content x modifies the size of the band gap by several 100 meV and that x changes the gap type from indirect in SnS to direct in Pb0.2Sn0.8S. These results are supported by UV-Vis spectroscopy of exfoliated Pb0.2Sn0.8S. The method employed demonstrates a new, scalable, processing pathway which can potentially be used to synthesize a range of synthetic layered structures that can be exfoliated to as-yet unaccessed 2D materials with tunable electronic properties.

Correction: Synthetic 2-D lead tin sulfide nanosheets with tuneable optoelectronic properties from a potentially scalable reaction pathway.

[This corrects the article DOI: 10.1039/C8SC04018D.].

Long-range oriented graphene-like nanosheets with corrugated structure.

A facile molten-salt (MS) route for the scalable synthesis of free-standing, long-range oriented and corrugated graphene-like sheets from a copper phthalocyanine (CuPc) precursor is reported. Their unique arrangement and transformation behavior in molten potassium chloride (KCl) play a key role in promoting the successful synthesis of the anisotropic nanostructure.

Enhanced Photoluminescence of Solution-Exfoliated Transition Metal Dichalcogenides by Laser Etching.

Using a conventional Raman experimental apparatus, we demonstrate that the photoluminescent (PL) yield from ultrasonication-exfoliated transition metal dichalcogenides (TMDs) (MoS2 and WS2) can be increased by up to 8-fold by means of a laser etching procedure. This laser etching process allows us to controllably pattern and reduce the number of layers of the solution-exfoliated material, overcoming the key drawback to solvent-based exfoliation of two-dimensional (2D) semiconducting materials for applications in optoelectronics. The successful laser thinning of the exfoliated 2D crystals was investigated systematically by changes in both Raman and PL spectra. A simple proof-of-principle of the scalability of this laser etching technique for solution-exfoliated TMD crystals was also demonstrated. As well as being applicable for individual materials, it is also possible to use this simple laser etching technique to investigate the structure of solution-generated van der Waals heterostructures, consisting of layers of both MoS2 and WS2.

Monolayer-to-thin-film transition in supramolecular assemblies: the role of topological protection.

The ability to control the transition from a two-dimensional (2D) monolayer to the three-dimensional (3D) molecular structure in the growth of organic layers on surfaces is essential for the production of functional thin films and devices. This has, however, proved to be extremely challenging, starting from the currently limited ability to attain a molecular scale characterization of this transition. Here, through innovative application of low-dose electron diffraction and aberration-corrected transmission electron microscopy (acTEM), combined with scanning tunneling microscopy (STM), we reveal the structural changes occurring as film thickness is increased from monolayer to tens of nanometers for supramolecular assembly of two prototypical benzenecarboxylic acids - terephthalic acid (TPA) and trimesic acid (TMA) - on graphene. The intermolecular hydrogen bonding in these molecules is similar and both form well-ordered monolayers on graphene, but their structural transitions with film thickness are very different. While the structure of TPA thin films varies continuously towards the 3D lattice, TMA retains its planar monolayer structure up to a critical thickness, after which a transition to a polycrystalline film occurs. These distinctive structural evolutions can be rationalized in terms of the topological differences in the 3D crystallography of the two molecules. The templated 2D structure of TPA can smoothly map to its 3D structure through continuous molecular tilting within the unit cell, whilst the 3D structure of TMA is topologically distinct from its 2D form, so that only an abrupt transition is possible. The concept of topological protection of the 2D structure gives a new tool for the molecular design of nanostructured films.

Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures.

Combining monolayers of different two-dimensional semiconductors into heterostructures creates new phenomena and device possibilities. Understanding and exploiting these phenomena hinge on knowing the electronic structure and the properties of interlayer excitations. We determine the key unknown parameters in MoSe2/WSe2 heterobilayers by using rational device design and submicrometer angle-resolved photoemission spectroscopy (µ-ARPES) in combination with photoluminescence. We find that the bands in the K-point valleys are weakly hybridized, with a valence band offset of 300 meV, implying type II band alignment. We deduce that the binding energy of interlayer excitons is more than 200 meV, an order of magnitude higher than that in analogous GaAs structures. Hybridization strongly modifies the bands at Γ, but the valence band edge remains at the K points. We also find that the spectrum of a rotationally aligned heterobilayer reflects a mixture of commensurate and incommensurate domains. These results directly answer many outstanding questions about the electronic nature of MoSe2/WSe2 heterobilayers and demonstrate a practical approach for high spectral resolution in ARPES of device-scale structures.