Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates.

Strain can modulate bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional strain-application methodologies relying on flexible/patterned/nanoindented substrates are limited by low thermal tolerance, poor tunability, and/or scalability. Here, we leverage the converse piezoelectric effect to electrically generate and control strain transfer from a piezoelectric thin film to electromechanically coupled 2D MoS2. Electrical bias polarity change across the piezo film tunes the nature of strain transferred to MoS2 from compressive (∼0.23%) to tensile (∼0.14%) as verified through Raman and photoluminescence spectroscopies and substantiated by density functional theory calculations. The device architecture, on silicon substrate, integrates an MoS2 field-effect transistor on a metal-piezoelectric-metal stack enabling strain modulation of transistor drain current (130×), on/off ratio (150×), and mobility (1.19×) with high precision, reversibility, and resolution. Large, tunable tensile (1056) and compressive (-1498) strain gauge factors, electrical strain modulation, and high thermal tolerance promise facile integration with silicon-based CMOS and micro-electromechanical systems.

Gigantic Anisotropy of Self-Induced Spin-Orbit Torque in Weyl Ferromagnet Co2MnGa.

Spin-orbit torque (SOT) is receiving tremendous attention from both fundamental and application-oriented aspects. Co2MnGa, a Weyl ferromagnet that is in a class of topological quantum materials, possesses cubic-based high structural symmetry, the L21 crystal ordering, which should be incapable of hosting anisotropic SOT in conventional understanding. Here we show the discovery of a gigantic anisotropy of self-induced SOT in Co2MnGa. The magnitude of the SOT is comparable to that of heavy metal/ferromagnet bilayer systems, despite the high inversion symmetry of the Co2MnGa structure. More surprisingly, a sign inversion of the self-induced SOT is observed for different crystal axes. This finding stems from the interplay of the topological nature of the electronic states and their strong modulation by external strain. Our research enriches the understanding of the physics of self-induced SOT and demonstrates a versatile method for tuning SOT efficiencies in a wide range of materials for topological and spintronic devices.

Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics.

Pn heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current-rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct heterointerface bandgap for enhanced photogeneration in high light-absorbing few-layer vdW materials remains unexplored. In this work, for the first time, density functional theory calculations show that the heterointerface of few-layer group-6 transition metal dichalcogenide (TMD) WSe2 with group-7 ReS2 results in a sizable (0.7 eV) near-direct type-II bandgap. The interlayer IR bandgap is confirmed through IR photodetection, and microphotoluminescence measurements demonstrate type-II alignment. Few-layer flakes exhibit ultrafast response time (5 µs), high responsivity (3 A/W), and large photocurrent-generation and responsivity-enhancement at the hetero-overlap region (10-100×). Large open-circuit voltage of 0.64 V and short-circuit current of 2.6 µA enable high output electrical power. Finally, long-term air-stability and facile single contact metal fabrication process make the multifunctional few-layer WSe2/ReS2 heterostructure diode technologically promising for next-generation optoelectronics.

Tunable electronic properties of partially edge-hydrogenated armchair boron-nitrogen-carbon nanoribbons.

We employ a first-principles calculations based density-functional-theory (DFT) approach to study the electronic properties of partially and fully edge-hydrogenated armchair boron-nitrogen-carbon (BNC) nanoribbons (ABNCNRs), with widths between 0.85 nm to 2.3 nm. Due to the partial passivation of edges, the electrons, which do not participate in the bonding, form new energy states located near the Fermi-level. Because of these additional bands, some ABNCNRs exhibit metallic behavior, which is quite uncommon in armchair nanoribbons. Our calculations reveal that metallic behavior is observed for the following passivation patterns: (i) when the B atom from one edge and the N atom from another edge are unpassivated. (ii) when the N atoms from both the edges are unpassivated. (iii) when the C atom from one edge and the N atom from another edge are unpassivated. Furthermore, spin-polarization is also observed for certain passivation schemes, which is also quite uncommon for armchair nanoribbons. Thus, our results suggest that the ABNCNRs exhibit a wide range of electronic and magnetic properties in that the fully edge-hydrogenated ABNCNRs are direct band gap semiconductors, while the partially edge-hydrogenated ones are either semiconducting, or metallic, while simultaneously exhibiting spin polarization, based on the nature of passivation. We also find that the ribbons with larger widths are more stable as compared to the narrower ones.

Atomistic insights into the adsorption and stimuli-responsive behavior of poly(N-isopropylacrylamide)-graphene hybrid systems.

Non-covalent functionalization of graphene materials with responsive polymers is a promising approach for synthesizing new, hybrid composites with improved dispersibility and functional properties. However, the interplay between various components of the hybrid systems, their structural configurations, and stimuli-responsive behavior are not yet well understood at the atomic level. Here, we investigate the temperature-responsive behavior of physisorbed poly(N-isopropylacrylamide) (PNIPAM) on to graphene (G) and graphene oxide (GO) sheets in aqueous solution using large scale molecular dynamics simulations. It was observed that PNIPAM can be spontaneously anchored to the surfaces of both G and GO at 290 K with a macromolecular coil shape. However, the configuration of PNIPAM on G is markedly different in comparison with that on GO, leading to its distinct thermoresponsive behavior. Specifically, the adsorption on G gives rise to an increase in the temperature of the coil-to-globule transition when compared to the native polymer, the origin of which can be interpreted in terms of the interactions and the solvation behavior. The results obtained here are of significance to the design and manipulation of graphene-based stimuli-responsive hybrid systems with optimal functional properties.

Plasmon resonances of highly doped two-dimensional MoS2.

The exhibition of plasmon resonances in two-dimensional (2D) semiconductor compounds is desirable for many applications. Here, by electrochemically intercalating lithium into 2D molybdenum disulfide (MoS2) nanoflakes, plasmon resonances in the visible and near UV wavelength ranges are achieved. These plasmon resonances are controlled by the high doping level of the nanoflakes after the intercalation, producing two distinct resonance peak areas based on the crystal arrangements. The system is also benchmarked for biosensing using bovine serum albumin. This work provides a foundation for developing future 2D MoS2 based biological and optical units.

Exploring unconventional ferromagnetism in hole-doped LaCrAsO: insights into charge-transfer and magnetic interactions.

Itinerant ferromagnetism due to the canonical double exchange (CDE) mechanism always occurs at low doping concentrations. Here we demonstrate the occurrence of robust itinerant ferromagnetism that can persist high doping concentrations. Using experimentally synthesized LaCrAsO as an illustrative example, we study the effects of hole doping via first-principles calculations and observe that the parent G-type antiferromagnetism vanishes quickly at a low doping concentration (∼0.20) and the system becomes a ferromagnetic metal due to the CDE mechanism. As the doping concentration continues to increase, the As 4p orbitals are gradually pushed up to the Fermi level and doped with holes. These ligand holes participate in the exchange interactions and drive the system toward ferromagnetism. Therefore, itinerant ferromagnetism doesn't terminate at an intermediate doping concentration as the CDE mechanism usually predicts. Furthermore, our results reveal that both the nearest and the next-nearest ferromagnetic exchange coupling strengths keep growing with doping concentration monotonically, showing that the emergent ferromagnetism mediated by As 4p orbitals is "stronger" than that of the CDE picture. Our work unlocks a new mechanism of itinerant ferromagnetism and potentially paves the way towards novel magneto-transport properties.

Local gate control of Mott metal-insulator transition in a 2D metal-organic framework.

Electron-electron interactions in materials lead to exotic many-body quantum phenomena, including Mott metal-insulator transitions (MITs), magnetism, quantum spin liquids, and superconductivity. These phases depend on electronic band occupation and can be controlled via the chemical potential. Flat bands in two-dimensional (2D) and layered materials with a kagome lattice enhance electronic correlations. Although theoretically predicted, correlated-electron Mott insulating phases in monolayer 2D metal-organic frameworks (MOFs) with a kagome structure have not yet been realised experimentally. Here, we synthesise a 2D kagome MOF on a 2D insulator. Scanning tunnelling microscopy (STM) and spectroscopy reveal a MOF electronic energy gap of ∼200 meV, consistent with dynamical mean-field theory predictions of a Mott insulator. Combining template-induced (via work function variations of the substrate) and STM probe-induced gating, we locally tune the electron population of the MOF kagome bands and induce Mott MITs. These findings enable technologies based on electrostatic control of many-body quantum phases in 2D MOFs.

Cryogenic Thermal Shock Effects on Optical Properties of Quantum Emitters in Hexagonal Boron Nitride.

Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color centers in hexagonal boron nitride have garnered tremendous traction in recent years, thanks to their environmental robustness, high brightness, and room-temperature operation. Most recently, these quantum emitters have been employed for satellite-based quantum key distribution. One of the most important requirements to qualify these emitters for space-based applications is their optical stability against cryogenic thermal shock. Such an understanding has, however, remained elusive to date. Here, we report on the effects caused by such thermal shock that induces random, irreversible changes in the spectral characteristics of the quantum emitters. By employing a combination of structural characterizations and density functional calculations, we attribute the observed changes to lattice strain caused by cryogenic temperature shock. Our study sheds light on the stability of the quantum emitters under extreme conditions─similar to those countered in outer space.

Efficient atomic-scale kinetics through a complex heterophase interface.

Atomic-scale imaging and first-principles modeling are applied to the heterophase interface between the Al-Cu solid solution (αCu) and θ' (Al2Cu) phases. Contrary to recent studies, our observations reveal a diffuse interface of complex but well-defined structure that enables the progression from αCu to θ' over a distance of ≈1 nm. We demonstrate that, surprisingly, the observed interfacial structure is not preferred on energetic grounds. Rather, the excess in interfacial energy is compensated by efficient atomic-scale kinetics of the αCu→θ' phase transformation.

Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions.

The presence of the van der Waals gap in layered materials creates a wealth of intriguing phenomena different to their counterparts in conventional materials. For example, pressurization can generate a large anisotropic lattice shrinkage along the stacking orientation and/or a significant interlayer sliding, and many of the exotic pressure-dependent properties derive from these mechanisms. Here we report a giant piezoresistivity in pressurized ß'-In2Se3. Upon compression, a six-orders-of-magnitude drop of electrical resistivity is obtained below 1.2 GPa in ß'-In2Se3 flakes, yielding a giant piezoresistive gauge πp of -5.33 GPa-1. Simultaneously, the sample undergoes a semiconductor-to-semimetal transition without a structural phase transition. Surprisingly, linear dichroism study and theoretical first principles modelling show that these phenomena arise not due to shrinkage or sliding at the van der Waals gap, but rather are dominated by the layer-dependent atomic motions inside the quintuple layer, mainly from the shifting of middle Se atoms to their high-symmetric location. The atomic motions link to both the band structure modulation and the in-plane ferroelectric dipoles. Our work not only provides a prominent piezoresistive material but also points out the importance of intralayer atomic motions beyond van der Waals gap.

Influence of electric field on SERS: frequency effects, intensity changes, and susceptible bonds.

The fundamental mechanism proposed to explain surface-enhanced Raman scattering (SERS) relies on electromagnetic field enhancement at optical frequencies. In this work, we demonstrate the use of microfabricated, silver nanotextured electrode pairs to study, in situ, the influence of low frequency (5 mHz to 1 kHz) oscillating electric fields on the SERS spectra of thiophenol. This applied electric field is shown to affect SERS peak intensities and influence specific vibrational modes of the analyte. The applied electric field perturbs the polar analyte, thereby altering the scattering cross section. Peaks related to the sulfurous bond which binds the molecule to the silver nanotexture exhibit strong and distinguishable responses to the applied field, due to varying bending and stretching mechanics. Density functional theory simulations are used to qualitatively verify the experimental observations. Our experimental and simulation results demonstrate that the SERS spectral changes relate to electric field induced molecular reorientation, with dependence on applied field strength and frequency. This demonstration creates new opportunities for external dynamic tuning and multivariate control of SERS measurements.

Discriminative separation of gases by a "molecular trapdoor" mechanism in chabazite zeolites.

Separation of molecules based on molecular size in zeolites with appropriate pore aperture dimensions has given rise to the definition of "molecular sieves" and has been the basis for a variety of separation applications. We show here that for a class of chabazite zeolites, what appears to be "molecular sieving" based on dimension is actually separation based on a difference in ability of a guest molecule to induce temporary and reversible cation deviation from the center of pore apertures, allowing for exclusive admission of certain molecules. This new mechanism of discrimination permits "size-inverse" separation: we illustrate the case of admission of a larger molecule (CO) in preference to a smaller molecule (N(2)). Through a combination of experimental and computational approaches, we have uncovered the underlying mechanism and show that it is similar to a "molecular trapdoor". Our materials show the highest selectivity of CO(2) over CH(4) reported to date with important application to natural gas purification.

Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2/SnSe2 Diode with Large Negative Responsivity.

Excellent light-matter interaction and a wide range of thickness-tunable bandgaps in layered vdW materials coupled by the facile fabrication of heterostructures have enabled several avenues for optoelectronic applications. Realization of high photoresponsivity at fast switching speeds is a critical challenge for 2D optoelectronics to enable high-performance photodetection for optical communication. Moving away from conventional type-II heterostructure pn junctions towards a WSe2/SnSe2 type-III configuration, we leverage the steep change in tunneling current along with a light-induced heterointerface band shift to achieve high negative photoresponsivity, while the fast carrier transport under tunneling results in high speed. In addition, the photocurrent can be controllably switched from positive to negative values, with ∼104× enhancement in responsivity, by engineering the band alignment from type-II to type-III using either the drain or the gate bias. This is further reinforced by electric-field dependent interlayer band structure calculations using density functional theory. The high negative responsivity of 2 × 104 A/W and fast response time of ∼1 µs coupled with a polarity-tunable photocurrent can lead to the development of next-generation multifunctional optoelectronic devices.

Large Magnetic Gap in a Designer Ferromagnet-Topological Insulator-Ferromagnet Heterostructure.

Combining magnetism and nontrivial band topology gives rise to quantum anomalous Hall (QAH) insulators and exotic quantum phases such as the QAH effect where current flows without dissipation along quantized edge states. Inducing magnetic order in topological insulators via proximity to a magnetic material offers a promising pathway toward achieving the QAH effect at a high temperature for lossless transport applications. One promising architecture involves a sandwich structure comprising two single-septuple layers (1SL) of MnBi2 Te4 (a 2D ferromagnetic insulator) with ultrathin few quintuple layer (QL) Bi2 Te3 in the middle, and it is predicted to yield a robust QAH insulator phase with a large bandgap greater than 50 meV. Here, the growth of a 1SL MnBi2 Te4 /4QL Bi2 Te3 /1SL MnBi2 Te4 heterostructure via molecular beam epitaxy is demonstrated and the electronic structure probed using angle-resolved photoelectron spectroscopy. Strong hexagonally warped massive Dirac fermions and a bandgap of 75 ± 15 meV are observed. The magnetic origin of the gap is confirmed by the observation of the exchange-Rashba effect, as well as the vanishing bandgap above the Curie temperature, in agreement with density functional theory calculations. These findings provide insights into magnetic proximity effects in topological insulators and reveal a promising platform for realizing the QAH effect at elevated temperatures.

Molecularly Controlled Quantum Well Width Distribution and Optoelectronic Properties in Quasi-2D Perovskite Light-Emitting Diodes.

Owing to their excellent optoelectronic properties, quasi-2D perovskites with self-assembled multiple quantum well (MQW) structures have shown great potential in light-emitting diode (LED) applications. Understanding the correlation between the bulky cation, quantum well assembly, and optoelectronic properties of a quasi-2D perovskite is important. Here, we demonstrate that the dipole moment of the bulky cation can be one of the fundamental factors that controls the distribution and crystallinity of different quantum wells. We find that the bulky cation with a moderate dipole moment leads to moderately distributed well-width MQWs, resulting in a superior device efficiency due to the simultaneous achievement of favorable optical and electronic properties. The peak external quantum efficiency and the maximum luminance of the champion device are 10.8% and 19082 cd m-2, respectively, positioning it among the best-performing quasi-2D green perovskite LEDs without further surface passivation or additive doping. This work provides a perspective on the rational design of bulky cations in quasi-2D perovskite LEDs, which is also essential for the development of other mixed-dimensional perovskite optoelectronic devices.

Spatial calcium kinetics after a traumatic brain injury.

Accurate modelling of intracellular calcium ion ([Formula: see text]) concentration evolution is valuable as it is known to rapidly increase during a Traumatic Brain Injury. In the work presented here, our older non-spatial model dealing with the effect of mechanical stress upon the [Formula: see text] transportation in a neuron is spatialized by considering the brain tissue as a solid continuum with the [Formula: see text] activity occurring at every material point. Starting with one-dimensional representation, the brain tissue geometry is progressively made realistic and under the action of pressure or kinematic impulses, the effect of dimensionality and material behaviour on the correlation between the stress and concomitant [Formula: see text] concentration is investigated. The spatial calcium kinetics model faithfully captures the experimental observations concerning the [Formula: see text] concentration, load rate, magnitude and duration and most importantly shows that the critical location for primary injury may not be the most important location as far as secondary injury is concerned.

Detection of Halomethanes Using Cesium Lead Halide Perovskite Nanocrystals.

The extensive use of halomethanes (CH3X, X = F, Cl, Br, I) as refrigerants, propellants, and pesticides has drawn serious concern due to their adverse biological and atmospheric impact. However, there are currently no portable rapid and accurate monitoring systems for their detection. This work introduces an approach for the selective and sensitive detection of halomethanes using photoluminescence spectral shifts in cesium lead halide perovskite nanocrystals. Focusing on iodomethane (CH3I) as a model system, it is shown that cesium lead bromide (CsPbBr3) nanocrystals can undergo rapid (<5 s) halide exchange, but only after exposure to oleylamine to induce nucleophilic substitution of the CH3I and release the iodide species. The extent of the halide exchange is directly dependent on the CH3I concentration, with the photoluminescence emission of the CsPbBr3 nanocrystals exhibiting a redshift of more than 150 nm upon the addition of 10 ppmv of CH3I. This represents the widest detection range and the highest sensitivity to the detection of halomethanes using a low-cost and portable approach reported to date. Furthermore, inherent selectivity for halomethanes compared to other organohalide analogues is achieved through the dramatic differences in their alkylation reactivity.

A saccharide-based binder for efficient polysulfide regulations in Li-S batteries.

The viability of lithium-sulfur batteries as an energy storage technology depends on unlocking long-term cycle stability. Most instability stems from the release and transport of polysulfides from the cathode, which causes mossy growth on the lithium anode, leading to continuous consumption of electrolyte. Therefore, development of a durable cathode with minimal polysulfide escape is critical. Here, we present a saccharide-based binder system that has a capacity for the regulation of polysulfides due to its reducing properties. Furthermore, the binder promotes the formation of viscoelastic filaments during casting which endows the sulfur cathode with a desirable web-like microstructure. Taken together this leads to 97% sulfur utilisation with a cycle life of 1000 cycles (9 months) and capacity retention (around 700 mAh g-1 after 1000 cycles). A pouch cell prototype with a specific energy of up to 206 Wh kg-1 is produced, demonstrating the promising potential for practical applications.

Crossover from 2D Ferromagnetic Insulator to Wide Band Gap Quantum Anomalous Hall Insulator in Ultrathin MnBi2Te4.

Intrinsic magnetic topological insulators offer low disorder and large magnetic band gaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the quantum anomalous Hall (QAH) effect and axion insulator phases have been realized. These observations occur at temperatures significantly lower than the Néel temperature of bulk MnBi2Te4, and measurement of the magnetic energy gap at the Dirac point in ultrathin MnBi2Te4 has yet to be achieved. Critical to achieving the promise of this system is a direct measurement of the layer-dependent energy gap and verification of a temperature-dependent topological phase transition from a large band gap QAH insulator to a gapless TI paramagnetic phase. Here we utilize temperature-dependent angle-resolved photoemission spectroscopy to study epitaxial ultrathin MnBi2Te4. We directly observe a layer-dependent crossover from a 2D ferromagnetic insulator with a band gap greater than 780 meV in one septuple layer (1 SL) to a QAH insulator with a large energy gap (>70 meV) at 8 K in 3 and 5 SL MnBi2Te4. The QAH gap is confirmed to be magnetic in origin, as it becomes gapless with increasing temperature above 8 K.