Bioelectronic silicon nanowire devices using functional membrane proteins.

Modern means of communication rely on electric fields and currents to carry the flow of information. In contrast, biological systems follow a different paradigm that uses ion gradients and currents, flows of small molecules, and membrane electric potentials. Living organisms use a sophisticated arsenal of membrane receptors, channels, and pumps to control signal transduction to a degree that is unmatched by manmade devices. Electronic circuits that use such biological components could achieve drastically increased functionality; however, this approach requires nearly seamless integration of biological and manmade structures. We present a versatile hybrid platform for such integration that uses shielded nanowires (NWs) that are coated with a continuous lipid bilayer. We show that when shielded silicon NW transistors incorporate transmembrane peptide pores gramicidin A and alamethicin in the lipid bilayer they can achieve ionic to electronic signal transduction by using voltage-gated or chemically gated ion transport through the membrane pores.

Carbon nanotube transistor controlled by a biological ion pump gate.

We report a hybrid bionanoelectronic transistor that has a local ATP-powered protein gate. ATP-dependent activity of a membrane ion pump, Na(+)/K(+)-ATPase, embedded in a lipid membrane covering the carbon nanotube, modulates the transistor output current by up to 40%. The ion pump gates the device by shifting the pH of the water layer between the lipid bilayer and nanotube surface. This transistor is a versatile bionanoelectronic platform that can incorporate other membrane proteins.

Functional integration of membrane proteins with nanotube and nanowire transistor devices.

Biological molecules perform a sophisticated array of transport and signaling functions that rival anything that the modern electronics industry can create. Incorporating such building blocks into nanoelectronic devices could enable new generations of electronic circuits that use biomimetics to perform complicated tasks. Such types of circuits could ultimately blur the interface between living biological organisms and synthetic structures. Our laboratory has recently developed a versatile and flexible platform for integrating ion channels and pumps into single-walled carbon nanotube (SWNT) and silicon nanowire (SiNW) transistor devices, in which membrane proteins are embedded in a lipid bilayer shell covering the nanotube or nanowire component. In this chapter, we provide details for the fabrication of these devices and outline procedures for incorporating biological molecules into them. In addition, we also provide several examples of the use of these devices to couple biological transport to electronic signaling.

Highly efficient biocompatible single silicon nanowire electrodes with functional biological pore channels.

Nanoscale electrodes based on one-dimensional inorganic conductors could possess significant advantages for electrochemical measurements over their macroscopic counterparts in a variety of electrochemical applications. We show that the efficiency of the electrodes constructed of individual highly doped silicon nanowires greatly exceeds the efficiency of flat Si electrodes. Modification of the surfaces of the nanowire electrodes with phospholipid bilayers produces an efficient biocompatible barrier to transport of the solution redox species to the nanoelectrode surface. Incorporating functional alpha-hemolysin protein pores in the lipid bilayer results in a partial recovery of the Faradic current due to the specific transport through the protein pore. These assemblies represent a robust and versatile platform for building a new generation of highly specific biosensors and nano/bioelectronic devices.

Imaging dielectric properties of Si nanowire oxide with conductive atomic force microscopy complemented with femtosecond laser illumination.

In most Si nanowire (NW) applications, Si oxide provides insulation or a medium of controlled electron tunneling. This work revealed both similarities and differences in the dielectric properties of NW oxide compared with that grown on wafers. The interface barrier to electron transit from the semiconductor to the dielectric and the threshold electric field for current flow are quite similar to those in the planar geometry. This is not true for the lowest currents measured which are not uniformly distributed, indicating variations of trap density in the gap of NW oxide.