Hyperband electro-optic modulator based on a two-pulley coupled lithium niobate racetrack resonator.

Integrated optical modulators (IOMs) are crucial components of on-chip photonic circuits. However, most conventional IOMs are restricted to specific spectral bands. Here, we leveraged the wide transparency window of lithium niobate in conjunction with the two-pulley coupled resonator method. This approach led to the development of a hyperband electro-optic (EO) modulator that operates over an expansive spectral range from 775 to 1550 nm on a single device. The demonstrated EO modulator exhibits half-wave voltage-length products of 0.25, 0.93, and 0.68 V·cm at wavelengths of 1539.50, 969.70, and 775.17 nm, respectively.

Electro-optic control of the external coupling strength of a high-quality-factor lithium niobate micro-resonator.

Controlling the optical coupling between a micro-resonator and waveguide plays a key role in on-chip photonic circuits. Here, we demonstrate a two-point coupled lithium niobate (LN) racetrack micro-resonator that enables us to electro-optically traverse a full set of the zero-, under-, critical-, and over-coupling regimes with minimized disturbance of the intrinsic properties of the resonant mode. The modulation between the zero- and critical-coupling conditions cost a resonant frequency shift of only ∼344.2 MHz and rarely changed the intrinsic quality (Q) factor of 4.6 × 105. Our device is a promising element in on-chip coherent photon storage/retrieval and its applications.

Terahertz continuous wave system using phase shift interferometry for measuring the thickness of sub-100-µm-thick samples without frequency sweep.

A terahertz continuous wave system is demonstrated for thickness measurement using Gouy phase shift interferometry without frequency sweep. One arm of the interferometer utilizes a collimated wave as a reference, and the other arm applies a focused beam for sample investigation. When the optical path difference (OPD) of the arms is zero, a destructive interference pattern is produced. Interference signal intensity changes induced by the OPD changes can be easily predicted by calculations. By minimizing the difference between the measured and the calculated signal against the OPD, the thicknesses of sub-100-µm-thick samples are determined at 625 GHz.

Remote N2O gas sensing by enhanced 910-m propagation of THz pulses.

We modified our 910-m long path THz system to increase the signal-to-noise ratio (S/N) with a nanostructure plasmonic THz transmitter (Tx) chip and a seven-mirror array reflector with 1 m diameter. When the THz pulse propagates the 910-m distance in the atmosphere, the S/N is up to 1170:1, which made the THz pulse measurable at a high water vapor density (WVD) of up to 25.2 g/m3. The time shift of the THz pulse according to the WVD measured for each meteorological season was matched well with the theoretical result. Due to the modified long-distance THz system, we were able to measure for the first time the resonances of N2O gas, which is located 455 m away from the Tx and receiver (Rx) chips and contained in a 1.5-m diameter rubber balloon under atmospheric pressure. Seven resonances can be detected except for one overlay of resonant frequency by water vapor.

Terahertz rectifier exploiting electric field-induced hot-carrier effect in asymmetric nano-electrode.

Rectifiers have been used to detect electromagnetic waves with very low photon energies. In these rectifying devices, different methods have been utilized, such as adjusting the bandgap and the doping profile, or utilizing the contact potential of the metal-semiconductor junction to produce current flow depending on the direction of the electric field. In this paper, it is shown that the asymmetric application of nano-electrodes to a metal-semiconductor-metal (MSM) structure can produce such rectification characteristics, and a terahertz (THz) wave detector based on the nano-MSM structure is proposed. Integrated with a receiving antenna, the fabricated device detects THz radiation up to a frequency of 1.5 THz with responsivity and noise equivalent power of 10.8 V/W and [Formula: see text] respectively, estimated at 0.3 THz. The unidirectional current flow is attributed to the thermionic emission of hot carriers accelerated by the locally enhanced THz field at the sharp end of the nano-electrode. This work not only demonstrates a new type of THz detector but also proposes a method for manipulating ultrafast charge-carrier dynamics through the field enhancement of the nano-electrode, which can be applied to ultrafast photonic and electronic devices.

Terahertz radiation using log-spiral-based low-temperature-grown InGaAs photoconductive antenna pumped by mode-locked Yb-doped fiber laser.

We demonstrate a terahertz (THz) radiation using log-spiral-based low-temperature-grown (LTG) InGaAs photoconductive antenna (PCA) modules and a passively mode-locked 1030 nm Yb-doped fiber laser. The passively mode-locked Yb-doped fiber laser is easily implemented with nonlinear polarization rotation in the normal dispersion using a 10-nm spectral filter. The laser generates over 250 mW of the average output power with positively chirped 1.58 ps pulses, which are dechirped to 127 fs pulses using a pulse compressor outside the laser cavity. In order to obtain THz radiation, a home-made emitter and receiver constructed from log-spiral-based LTG InGaAs PCA modules were used to generate and detect THz signals, respectively. We successfully achieved absorption lines over 1.5 THz for water vapor in free space. Therefore, we confirm that a mode-locked Yb-doped fiber laser has the potential to be used as an optical source to generate THZ waves.

Subsurface nanoimaging by broadband terahertz pulse near-field microscopy.

Combined with terahertz (THz) time-domain spectroscopy, THz near-field microscopy based on an atomic force microscope is a technique that, while challenging to implement, is invaluable for probing low-energy light-matter interactions of solid-state and biomolecular nanostructures, which are usually embedded in background media. Here, we experimentally demonstrate a broadband THz pulse near-field microscope that provides subsurface nanoimaging of a metallic grating embedded in a dielectric film. The THz near-field microscope can obtain broadband nanoimaging of the subsurface grating with a nearly frequency-independent lateral resolution of 90 nm, corresponding to ∼ λ/3300, at 1 THz, while the AFM only provides a flat surface topography.

Frequency modulation based continuous-wave terahertz homodyne system.

In this study, inspired by the frequency-modulated continuous-wave (FMCW) method, an operation scheme of continuous-wave (CW) terahertz (THz) homodyne system is proposed and evaluated. For this purpose, we utilized the fast and stable wavelength tuning characteristics of a dual-mode laser (DML) as a beating source. Using the frequency-modulated THz waves generated by DML, a cost-effective and robust operation of CW THz system to be applicable to the measurements of thickness or refractive index of a sample is demonstrated. We believe that the proposed scheme shows a potential to the implementations of compact and fast CW THz measurement systems that can be useful in many THz applications.

Metal-VO2 hybrid grating structure for a terahertz active switchable linear polarizer.

An active terahertz (THz) wave hybrid grating structure of Au/Ti metallic grating on VO2/Al2O3 (0001) was fabricated and evaluated. In our structure, it is shown that the metallic gratings on the VO2 layer strengthen the metallic characteristics to enhance the contrast of the metallic and dielectric phases of a VO2-based device. Especially, the metal grating-induced optical conductivity of the device is greatly enhanced, three times more than that of a metallic phase of bare VO2 films in the 0.1-2.0 THz spectral range. As an illustrative example, we fabricated an actively on/off switchable THz linear polarizer. The fabricated device has shown commercially comparable values in degree of polarization (DOP) and extinction ratio (ER). A high value of 0.89 in the modulation depth (MD) for the transmission field amplitude, superior to other THz wave modulators, is achieved. The experimental results show that the fabricated device can be highly useful in many applications, including active THz linear polarizers, THz wave modulators and variable THz attenuators.

Continuous-wave terahertz system based on a dual-mode laser for real-time non-contact measurement of thickness and conductivity.

Terahertz (THz) waves have been exploited for the non-contact measurements of thickness and refractive index, which has enormous industrial applicability. In this work, we demonstrate a 1.3-µm dual-mode laser (DML)-based continuous-wave THz system for the real-time measurement of a commercial indium-tin-oxide (ITO)-coated glass. The system is compact, cost-effective, and capable of performing broadband measurement within a second at the setting resolution of 1 GHz. The thickness of the glass and the sheet conductivity of the ITO film were successfully measured, and the measurements agree well with those of broadband pulse-based time domain spectroscopy and Hall measurement results.

Real-time continuous-wave terahertz line scanner based on a compact 1 × 240 InGaAs Schottky barrier diode array detector.

We demonstrate real-time continuous-wave terahertz (THz) line-scanned imaging based on a 1 × 240 InGaAs Schottky barrier diode (SBD) array detector with a scan velocity of 25 cm/s, a scan line length of 12 cm, and a pixel size of 0.5 × 0.5 mm². Foreign substances, such as a paper clip with a spatial resolution of approximately 1 mm that is hidden under a cracker, are clearly detected by this THz line-scanning system. The system consists of the SBD array detector, a 200-GHz gyrotron source, a conveyor system, and several optical components such as a high-density polyethylene cylindrical lens, metal cylindrical mirror, and THz wire-grid polarizer. Using the THz polarizer, the signal-to-noise ratio of the SBD array detector improves because the quality of the source beam is enhanced.

Low-temperature-grown InGaAs terahertz photomixer embedded in InP thermal spreading layer regrown by metalorganic chemical vapor deposition.

A novel buried photomixer for integrated photonic terahertz devices is proposed. The active region of the mesa-structure InGaAs photomixer is buried in an InP layer grown by metalorganic chemical vapor deposition (MOCVD) to improve heat dissipation, which is an important problem for terahertz photomixers. The proposed photomixer shows good thermal properties compared to a conventional planar-type photomixer. The MOCVD regrowth process indicates the possibility for THz photomixers to be integrated monolithically with conventional photonic devices.

Simple and cost-effective thickness measurement terahertz system based on a compact 1.55 µm λ/4 phase-shifted dual-mode laser.

A simple thickness measurement method based on the coherent homodyne CW THz system was demonstrated; it does not require precise control of the frequencies of the beat source, and only accurate scanning of the optical delay line is needed. Three beat frequencies are sufficient for measuring the thickness of a sample without considering the modulo 2π ambiguity. A novel compact 1.55 µm λ/4 phase-shifted dual-mode laser (DML) was developed as an optical beat source for the CW THz system. The thickness of a sample was accurately estimated from the measurements using the proposed method. Our results clearly show the possibility of a compact, simple, and cost-effective CW THz system for practical applications.

Quantitative analysis and measurements of near-field interactions in terahertz microscopes.

We demonstrated quantitative analysis and measurements of near-fields interactions in a terahertz pulse near-field microscope. We developed a self-consistent line dipole image method for the quantitative analysis of the near-field interaction in THz scattering-type scanning optical microscopes. The measurements of approach curves and relative contrasts on gold and silicon substrates were in excellent agreement with calculations.

CD99-PTPN12 Axis Suppresses Actin Cytoskeleton-Mediated Dimerization of Epidermal Growth Factor Receptor.

The epidermal growth factor receptor (EGFR), a member of ErbB receptor tyrosine kinase (RTK) family, is activated through growth factor-induced reorganization of the actin cytoskeleton and subsequent dimerization. We herein explored the molecular mechanism underlying the suppression of ligand-induced EGFR dimerization by CD99 agonists and its relevance to tumor growth in vivo. Epidermal growth factor (EGF) activated the formation of c-Src/focal adhesion kinase (FAK)-mediated intracellular complex and subsequently induced RhoA-and Rac1-mediated actin remodeling, resulting in EGFR dimerization and endocytosis. In contrast, CD99 agonist facilitated FAK dephosphorylation through the HRAS/ERK/PTPN12 signaling pathway, leading to inhibition of actin cytoskeletal reorganization via inactivation of the RhoA and Rac1 signaling pathways. Moreover, CD99 agonist significantly suppressed tumor growth in a BALB/c mouse model injected with MDA-MB-231 human breast cancer cells. Taken together, these results indicate that CD99-derived agonist ligand inhibits epidermal growth factor (EGF)-induced EGFR dimerization through impairment of cytoskeletal reorganization by PTPN12-dependent c-Src/FAK inactivation, thereby suppressing breast cancer growth.

Computed terahertz near-field mapping of molecular resonances of lactose stereo-isomer impurities with sub-attomole sensitivity.

Terahertz near-field microscopy (THz-NFM) could locally probe low-energy molecular vibration dynamics below diffraction limits, showing promise to decipher intermolecular interactions of biomolecules and quantum matters with unique THz vibrational fingerprints. However, its realization has been impeded by low spatial and spectral resolutions and lack of theoretical models to quantitatively analyze near-field imaging. Here, we show that THz scattering-type scanning near-field optical microscopy (THz s-SNOM) with a theoretical model can quantitatively measure and image such low-energy molecular interactions, permitting computed spectroscopic near-field mapping of THz molecular resonance spectra. Using crystalline-lactose stereo-isomer (anomer) mixtures (i.e., α-lactose (≥95%, w/w) and ß-lactose (≤4%, w/w)), THz s-SNOM resolved local intermolecular vibrations of both anomers with enhanced spatial and spectral resolutions, yielding strong resonances to decipher conformational fingerprint of the trace ß-anomer impurity. Its estimated sensitivity was ~0.147 attomoles in ~8 × 10-4 µm3 interaction volume. Our THz s-SNOM platform offers a new path for ultrasensitive molecular fingerprinting of complex mixtures of biomolecules or organic crystals with markedly enhanced spatio-spectral resolutions. This could open up significant possibilities of THz technology in many fields, including biology, chemistry and condensed matter physics as well as semiconductor industries where accurate quantitative mappings of trace isomer impurities are critical but still challenging.

Bias field tailored plasmonic nano-electrode for high-power terahertz photonic devices.

Photoconductive antennas with nano-structured electrodes and which show significantly improved performances have been proposed to satisfy the demand for compact and efficient terahertz (THz) sources. Plasmonic field enhancement was previously considered the dominant mechanism accounting for the improvements in the underlying physics. However, we discovered that the role of plasmonic field enhancement is limited and near-field distribution of bias field should be considered as well. In this paper, we clearly show that the locally enhanced bias field due to the size effect is much more important than the plasmonic enhanced absorption in the nano-structured electrodes for the THz emitters. Consequently, an improved nano-electrode design is presented by tailoring bias field distribution and plasmonic enhancement. Our findings will pave the way for new perspectives in the design and analysis of plasmonic nano-structures for more efficient THz photonic devices.