Elastic and inelastic strain in submicron-thick ZnO epilayers grown on r-sapphire substrates by metal-organic vapour phase deposition.

A significant part of the present and future of optoelectronic devices lies on thin multilayer heterostructures. Their optical properties depend strongly on strain, being essential to the knowledge of the stress level to optimize the growth process. Here the structural and microstructural characteristics of sub-micron a-ZnO epilayers (12 to 770 nm) grown on r-sapphire by metal-organic chemical vapour deposition are studied. Morphological and structural studies have been made using scanning electron microscopy and high-resolution X-ray diffraction. Plastic unit-cell distortion and corresponding strain have been determined as a function of film thickness. A critical thickness has been observed as separating the non-elastic/elastic states with an experimental value of 150-200 nm. This behaviour has been confirmed from ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy measurements. An equation that gives the balance of strains is proposed as an interesting method to experimentally determine this critical thickness. It is concluded that in the thinnest films an elongation of the Zn-O bond takes place and that the plastic strained ZnO films relax through nucleation of misfit dislocations, which is a consequence of three-dimensional surface morphology.

White light emission from lead-free mixed-cation doped Cs2SnCl6 nanocrystals.

We have designed a synthesis procedure to obtain Cs2SnCl6 nanocrystals (NCs) doped with metal ion(s) to emit visible light. Cs2SnCl6 NCs doped with Bi3+, Te4+ and Sb3+ ions emitted blue, yellow and red light, respectively. In addition, NCs simultaneously doped with Bi3+ and Te4+ ions were synthesized in a single run. Combination of both dopant ions together gives rise to the white emission. The photoluminescence quantum yields of the blue, yellow and white emissions are up to 26.5, 28, and 16.6%, respectively under excitation at 350, 390, and 370 nm. Pure white-light emission with CIE chromaticity coordinates of (0.32, 0.33) and (0.32, 0.32) at 340 and 370 nm excitation wavelength, respectively, was obtained. The as-prepared NCs were found to demonstrate a long-time stability, resistance to humidity, and an ability to be well-dispersed in polar solvents without property degradation due to their hydrophilicity, which could be of significant interest for wide application purposes.

Unravelling the Photocatalytic Behavior of All-Inorganic Mixed Halide Perovskites: The Role of Surface Chemical States.

Within the most mesmerizing materials in the world of optoelectronics, mixed halide perovskites (MHPs) have been distinguished because of the tunability of their optoelectronic properties, balancing both the light-harvesting efficiency and the charge extraction into highly efficient solar devices. This feature has drawn the attention of analogous hot topics as photocatalysis for carrying out more efficiently the degradation of organic compounds. However, the photo-oxidation ability of perovskite depends not only on its excellent light-harvesting properties but also on the surface chemical environment provided during its synthesis. Accordingly, we studied the role of surface chemical states of MHP-based nanocrystals (NCs) synthesized by hot-injection (H-I) and anion-exchange (A-E) approaches on their photocatalytic (PC) activity for the oxidation of ß-naphthol as a model system. We concluded that iodide vacancies are the main surface chemical states that facilitate the formation of superoxide ions, O2●-, which are responsible for the PC activity in A-E-MHP. Conversely, the PC performance of H-I-MHP is related to the appropriate balance between band gap and a highly oxidizing valence band. This work offers new insights on the surface properties of MHP related to their catalytic activity in photochemical applications.

Controlling the Phase Segregation in Mixed Halide Perovskites through Nanocrystal Size.

Mixed halide perovskites are one of the promising candidates in developing solar cells and light-emitting diodes (LEDs), among other applications, because of their tunable optical properties. Nonetheless, photoinduced phase segregation, by formation of segregated Br-rich and I-rich domains, limits the overall applicability. We tracked the phase segregation with increasing crystalline size of CsPbBr3-x I x and their photoluminescence under continuous-wave laser irradiation (405 nm, 10 mW cm-2) and observed the occurrence of the phase segregation from the threshold size of 46 ± 7 nm. These results have an outstanding agreement with the diffusion length (45.8 nm) calculated also experimentally from the emission lifetime and segregation rates. Furthermore, through Kelvin probe force microscopy, we confirmed the correlation between the phase segregation and the reversible halide ion migration among grain centers and boundaries. These results open a way to achieve segregation-free mixed halide perovskites and improve their performances in optoelectronic devices.

Study of the Partial Substitution of Pb by Sn in Cs-Pb-Sn-Br Nanocrystals Owing to Obtaining Stable Nanoparticles with Excellent Optical Properties.

Halide perovskites are revolutionizing the photovoltaic and optoelectronic fields with outstanding performances obtained in a remarkably short time. However, two major challenges remain: the long-term stability and the Pb content, due to its toxicity. Despite the great effort carried out to substitute the Pb by a less hazardous element, lead-free perovskite still remains more unstable than lead-containing perovskites and presents lower performance as well. In this work, we demonstrate the colloidal preparation of Cs-Pb-Sn-Br nanoparticles (NPs) where Sn is incorporated up to 18.8%. Significantly, we have demonstrated that the partial substitution of Pb by Sn does not produce a deleterious effect in their optical performance in terms of photoluminescence quantum yield (PLQY). We observed for the first time a positive effect in terms of enhancement of PLQY when Sn partially substitutes Pb in a considerable amount (i.e., higher than 5%). PLQYs as high as 73.4% have been obtained with a partial Pb replacement of 7% by Sn. We present a systematic study of the synthesis process in terms of different growth parameters (i.e., precursor concentration, time, and temperature of reaction) and how they influence the Sn incorporation and the PLQY. This high performance and long-term stability is based on a significant stabilization of Sn2+ in the NPs for several months, as determined by XPS analysis, and opens an interesting way to obtain less Pb-containing perovskite NPs with excellent optoelectronic properties.

Nanogoniometry with scanning force microscopy: a model study of CdTe thin films.

In this paper scanning force microscopy is combined with simple but powerful data processing to determine quantitatively, on a sub-micrometer scale, the orientation of surface facets present on crystalline materials. A high-quality scanning force topography image is used to determine an angular histogram of the surface normal at each image point. In addition to the known method for the assignment of Miller indices to the facets appearing on the surface, a quantitative analysis is presented that allows the characterization of the relative population and morphological quality of each of these facets. Two different CdTe thin films are used as model systems to probe the capabilities of this method, which enables further information to be obtained about the thermodynamic stability of particular crystallographic facets. The method, which is referred to as nanogoniometry, will be a powerful tool to study in detail the surface of crystalline materials, particularly thin films, with sub-micrometer resolution.

Formation and rupture of Schottky nanocontacts on ZnO nanocolumns.

In this paper, the electrical transport and mechanical properties of Pt/ZnO Schottky nanocontacts have been studied simultaneously during the formation and rupture of the nanocontacts. By combining multidimensional conducting scanning force spectroscopy with appropriated data processing, the physical relevant parameters (the ideality factor, the Schottky barrier height, and the rupture voltage) are obtained. It has been found that the transport curves strongly depend on the loading force. For loading forces higher than a threshold value, the transport characteristics are similar to those of large-area Schottky contact, while below this threshold deviations from strictly thermionic emission are detected. Above the threshold, stable and reproducible Pt/ZnO nanocontacts with ideality factors of about 2 and Schottky barrier heights of around 0.45 eV have been obtained.

Polarity effects on ZnO films grown along the nonpolar [1120] direction.

The surface electrical properties of ZnO thin films grown along the nonpolar [1120] direction have been investigated by Kelvin probe microscopy on a nanometer scale. Two different charge domains, with a 75 meV work function difference, coexist within the ZnO surface, which is covered by rhombohedral pyramids whose sidewalls are shown to be {1011}-type planes. The presence and relative orientation of the two kinds of charge domains are explained in terms of the atomic arrangement at the {1011} polar surfaces.