Polymorphs of two dimensional phosphorus and arsenic: insight from an evolutionary search.

Using an evolutionary algorithm, in conjunction with density functional theory (DFT) based electronic, ionic and cell relaxation, we perform an extensive search for the crystal structures of possible two dimensional (2D) allotropes of phosphorus and arsenic. In addition to previously reported allotropes like α, ß, γ and δ, we discover four new allotropes, whose cohesive energies differ from that of the ground state (α and ß, in the case of P and As, respectively) by merely ∼2-10 meV per atom. In terms of electrical properties, all of them are semiconductors, although the magnitude and nature of the bandgap (direct/indirect) vary considerably. We explain the diversity in terms of the atomic character of the valence and conduction bands of the allotropes. Barring a few exceptions, we find that the effective mass of both the electron and hole has marked anisotropies for most of the allotropes.

First principles prediction of amorphous phases using evolutionary algorithms.

We discuss the efficacy of evolutionary method for the purpose of structural analysis of amorphous solids. At present, ab initio molecular dynamics (MD) based melt-quench technique is used and this deterministic approach has proven to be successful to study amorphous materials. We show that a stochastic approach motivated by Darwinian evolution can also be used to simulate amorphous structures. Applying this method, in conjunction with density functional theory based electronic, ionic and cell relaxation, we re-investigate two well known amorphous semiconductors, namely silicon and indium gallium zinc oxide. We find that characteristic structural parameters like average bond length and bond angle are within ∼2% of those reported by ab initio MD calculations and experimental studies.

Nanometric Moiré Stripes on the Surface of Bi2Se3 Topological Insulator.

Mismatch between adjacent atomic layers in low-dimensional materials, generating moiré patterns, has recently emerged as a suitable method to tune electronic properties by inducing strong electron correlations and generating novel phenomena. Beyond graphene, van der Waals structures such as three-dimensional (3D) topological insulators (TIs) appear as ideal candidates for the study of these phenomena due to the weak coupling between layers. Here we discover and investigate the origin of 1D moiré stripes on the surface of Bi2Se3 TI thin films and nanobelts. Scanning tunneling microscopy and high-resolution transmission electron microscopy reveal a unidirectional strained top layer, in the range 14-25%, with respect to the relaxed bulk structure, which cannot be ascribed to the mismatch with the substrate lattice but rather to strain induced by a specific growth mechanism. The 1D stripes are characterized by a spatial modulation of the local density of states, which is strongly enhanced compared to the bulk system. Density functional theory calculations confirm the experimental findings, showing that the TI surface Dirac cone is preserved in the 1D moiré stripes, as expected from the topology, though with a heavily renormalized Fermi velocity that also changes between the top and valley of the stripes. The strongly enhanced density of surface states in the TI 1D moiré superstructure can be instrumental in promoting strong correlations in the topological surface states, which can be responsible for surface magnetism and topological superconductivity.