Fabrication of isolated CoGdTb magnetic nanodots with perpendicular magnetic anisotropy.

The authors report that a closely-packed hybrid nanostructure can be fabricated by using simple sputtering deposition and anodized aluminum oxide (AAO) templates. In order to isolate CoGdTb magnetic materials with the AAO template, carbon nanotubes (CNTs) were incorporated into the AAO template. Scanning electron microscopy reveals that the nanodots are formed exactly on the top of CNTs, which are placed in a regular arrangement over a wide range area. This indicates that magnetic nanodots, well-arranged over a large area, can be formed using simple sputtering deposition. Isothermal magnetization shows that the CoGdTb nanodots have perpendicular magnetic anisotropy and the strength of the dipolar interaction between the magnetic nanodots can be also controlled by adjusting the spacing between the dots.

Asymmetric angular dependence of domain wall motion in magnetic nanowires.

An angular dependence of domain wall (DW) motion is studied in a magnetic wire consisting of a giant-magnetoresistance spin-valve. A DW pinning site is formed by a single notch, where a conventional linear one and a specially designed tilted one are compared. The asymmetric angular dependence was found in the DW depinning behavior with the tilted notch. The geometry control of the pinning site can be useful for DW diode devices using a rotating magnetic field.

Current-induced domain wall nucleation and its pinning characteristics at a notch in a spin-valve nanowire.

The characteristics of domain wall (DW) pinning at a notch in a spin-valve nanowire were investigated when a DW was created by a current, flowing into a spin-valve nanowire. It was found that DW pinning at a notch is quite sensitive to the magnitude of the current and its polarity. The current-polarity dependence of DW pinning is likely due to the spin structure in the core of the DW, which is determined by an Oersted field from the current in a Cu layer. This indicates that the control of DW pinning at a notch in a nanowire can be achieved by a current acting on its own, which is an important advantage of this method, compared with field-induced DW control.

Insertion of a specular reflective and transmissive nano-oxide layer into giant magnetoresistance spin-valve structure.

We have studied the influence of the insertion of a nano-oxide layer (NOL) into a magnetic GMR spin-valve. It was found that the spin-valve with NOL has a higher GMR ratio than that of the normal spin-valve without NOL. Naturally formed NOL without vacuum break shows a uniform layer, which effectively suppresses the current shunt, resulting in the reduction of the sheet resistance of GMR. The NOL spin-valve also shows a lower interlayer coupling (Hin) than that of the optimal normal spin-valve, which is consistent with AFM measurement showing lower roughness of NOL formed CoFe surface. Based on the advantage of NOL, we succeeded in lowering Hin while maintaining GMR ratio by insertion of NOL inside the CoFe free layer, where the free layer consists of CoFe/NOL/CoFe/NOL/Capping layer.

Effects of Magnetic Domain Walls on the Anisotropic Magnetoresistance in NiFe Nanowires.

We show that a type of magnetic domain walls (DWs) can be monitored by anisotropic magnetoresistance (AMR) measurements due to a specific DW volume depending on the DW type in NiFe magnetic wires. A circular DW injection pad is used to generate DWs at a low magnetic field, resulting in reliable DW introduction into magnetic wires. DW pinning is induced by a change of DW energy at an asymmetric single notch. The injection of DW from the circular pad and its pinning at the notch is observed by using AMR and magnetic force microscope (MFM) measurements. A four-point probe AMR measurement allows us to distinguish the DW type in the switching process because DWs are pinned at the single notch, where voltage probes are closely placed around the notch. Two types of AMR behavior are observed in the AMR measurements, which is owing to a change of DW structures. MFM images and micromagnetic simulations are consistent with the AMR results.

Distortion of Magnetic Domain Wall Measured by Magneto-Resistance Changes in a Co Nanoring.

The electrical anisotropic magneto-resistance (AMR) measurements were performed to see the formation of a 360 degree magnetic domain wall (360 DW) and distortion of the magnetic moments in a Co nanoring structure. Since the 360 DW is consisted of two 180 degree DWs, a decrease of the resistance was found in the switching process from the vortex to reverse onion state by the AMR effects, which is consistent with micromagnetic simulations. In addition, a decrease of the resistance in the switching process from the onion to vortex state was observed by the distortion of the local magnetic moments due to an applied magnetic field. The stochastic behavior in the switching process is caused by thermally induced magnetic moments changes.

Magnetic dipolar interaction in NiFe nanodot arrays formed on vertical carbon nanotubes.

A new and simple method for the fabrication of densely packed magnetic nanodot arrays was developed using conventional sputtering deposition at room temperature. An anodized alumina template was employed for the formation of nanodot assemblies, consisting of carbon nanotubes (CNTs) and magnetic nanodot arrays. Each nanodot was formed exactly on top of a CNT and was arranged with a well-ordered structure in a wide range of area. It was also found that the size of dots and the distance between dots can be tailored by changing the length of CNTs, inducing a change of strength of dipolar interaction between nanodots.

Characteristics of domain wall pinning and depinning in a three-terminal magnetic Y-junction.

The characteristics of domain wall (DW) pinning and propagation in a three-terminal magnetic Y-junction were investigated, where the junction consisted of two input and one output wires. The output switching depends strongly on the junction angle (α). Junctions with high angles of α>9.5° lead to DW pinning at the junction, whereas junctions with low angles of α<9.5° have no DW pinning effect. At the critical angle of α = 9.5°, the Y-junction showed a multimode DW propagation, which was ascribed to a moderate transverse field effect.