Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond.

High electron mobility transistors (HEMTs) and Schottky barrier diodes (SBDs) based on AlGaN/GaN heterostructure have been widely studied for high-frequency and/or high-power application. Widely distributed substrates for the high performance of RF applications are presently AlGaN/GaN on SiC, and those for high power performance are AlGaN/GaN on Si. Because the thermal conductivity of CVD diamond substrates is as high as 12 W/cm · K, devices on AlGaN/GaN on CVD diamond are one of the excellent alternatives for power and RF applications. In comparison, the thermal conductivity of AlGaN/GaN on SiC is 4.9 W/cm K, and that of AlGaN/GaN on Si is 1.3 W/cm · K. In this work, we report the fabrication of SBD devices with 163.8 mm Schottky channel length. We also compared the thermal properties of the fabricated large scale SBD devices on different substrates.

Optimization of spot-size converter for low polarization dependent loss of waveguide photodetector.

We present an optimization of spot-size converter (SSC) of waveguide photodetector (PD) for small polarization dependent loss (PDL). Beam-propagation method simulation gives responsivity for each polarization and SSC structure. From the calculated responsivity data, optimum structure of SSC is determined that can be implemented with a sufficient process tolerance. We confirm the optimization by measuring PDL of waveguide PD designed according to the structure obtained through the simulation.

Stable two-wavelength lasers by use of a double alpha-type fiber cavity with fiber grating mirrors.

For high-frequency (20-200 GHz) modulated light sources, we developed and investigated two-wavelength lasers using the double alpha-type fiber cavities with fiber grating mirrors. For variations of polarization states and pump powers, parallel alpha-type coupled cavity lasers were found to be more stable than serial lasers.