Transistors formed from a single lithography step using information encoded in topography.

This paper describes a strategy for the fabrication of functional electronic components (transistors, capacitors, resistors, conductors, and logic gates but not, at present, inductors) that combines a single layer of lithography with angle-dependent physical vapor deposition; this approach is named topographically encoded microlithography (abbreviated as TEMIL). This strategy extends the simple concept of 'shadow evaporation' to reduce the number and complexity of the steps required to produce isolated devices and arrays of devices, and eliminates the need for registration (the sequential stacking of patterns with correct alignment) entirely. The defining advantage of this strategy is that it extracts information from the 3D topography of features in photoresist, and combines this information with the 3D information from the angle-dependent deposition (the angle and orientation used for deposition from a collimated source of material), to create 'shadowed' and 'illuminated' regions on the underlying substrate. It also takes advantage of the ability of replica molding techniques to produce 3D topography in polymeric resists. A single layer of patterned resist can thus direct the fabrication of a nearly unlimited number of possible shapes, composed of layers of any materials that can be deposited by vapor deposition. The sequential deposition of various shapes (by changing orientation and material source) makes it possible to fabricate complex structures-including interconnected transistors-using a single layer of topography. The complexity of structures that can be fabricated using simple lithographic features distinguishes this procedure from other techniques based on shadow evaporation.

Growth of ZnO nanowires catalyzed by size-dependent melting of Au nanoparticles.

We present a general approach to growing ZnO nanowires on arbitrary, high melting point (above 970 degrees C) substrates using the vapor-liquid-solid (VLS) growth mechanism. Our approach utilizes the melting point reduction of sufficiently small (5 nm diameter) Au particles to provide a liquid catalyst without substrate interaction. Using this size-dependent melting effect, we demonstrate catalytic VLS growth of ZnO nanowires on both Ti and Mo foil substrates with aspect ratios in excess of 1000:1. Transmission electron microscopy shows the nanowires to be single-crystalline, and photoluminescence spectra show high-quality optical properties. We believe this growth technique to be widely applicable to a variety of substrates and material systems.

Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide.

Optical properties and valence band density of states near the Fermi level of high-quality VO(2) thin films have been investigated by mid-infrared reflectometry and hard-UV (hν = 150 eV) photoemission spectroscopy. An exceptionally large change in reflectance from 2 to 94% is found upon the thermally driven metal-insulator transition (MIT). The infrared dispersion spectra of the reflectance across the MIT are presented and evidence for the percolative nature of the MIT is pointed out. The discrepancy between the MIT temperatures defined from the electrical and optical properties is found and its origin is discussed. The manifestation of the MIT is observed in the photoemission spectra of the V 3d levels. The analysis of the changes of the V 3d density of states is done and the top valence band shift upon the MIT is measured to be 0.6 eV.

Scientific Wealth in Middle East and North Africa: Productivity, Indigeneity, and Specialty in 1981-2013.

Several developing countries seek to build knowledge-based economies by attempting to expand scientific research capabilities. Characterizing the state and direction of progress in this arena is challenging but important. Here, we employ three metrics: a classical metric of productivity (publications per person), an adapted metric which we denote as Revealed Scientific Advantage (developed from work used to compare publications in scientific fields among countries) to characterize disciplinary specialty, and a new metric, scientific indigeneity (defined as the ratio of publications with domestic corresponding authors) to characterize the locus of scientific activity that also serves as a partial proxy for local absorptive capacity. These metrics-using population and publications data that are available for most countries-allow the characterization of some key features of national scientific enterprise. The trends in productivity and indigeneity when compared across other countries and regions can serve as indicators of strength or fragility in the national research ecosystems, and the trends in specialty can allow regional policy makers to assess the extent to which the areas of focus of research align (or not align) with regional priorities. We apply the metrics to study the Middle East and North Africa (MENA)-a region where science and technology capacity will play a key role in national economic diversification. We analyze 9.8 million publication records between 1981-2013 in 17 countries of MENA from Morocco to Iraq and compare it to selected countries throughout the world. The results show that international collaborators increasingly drove the scientific activity in MENA. The median indigeneity reached 52% in 2013 (indicating that almost half of the corresponding authors were located in foreign countries). Additionally, the regional disciplinary focus in chemical and petroleum engineering is waning with modest growth in the life sciences. We find repeated patterns of stagnation and contraction of scientific activity for several MENA countries contributing to a widening productivity gap on an international comparative yardstick. The results prompt questions about the strength of the developing scientific enterprise and highlight the need for consistent long-term policy for effectively addressing regional challenges with domestic research.

Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.

We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.

A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection.

We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while for the opposite polarity infrared light is emitted from the Si substrate. We propose a model, which explains the key features of the data, based on electron tunnelling from the valence band of one semiconductor into the conduction band of the other semiconductor. For example, for one polarity of the applied voltage, given a sufficient potential energy difference between the two semiconductors, electrons can tunnel from the valence band of GaN into the Si conduction band. This process results in the creation of holes in GaN, which can recombine with conduction band electrons generating GaN band-to-band luminescence. A similar process applies under the opposite polarity for Si light emission. This device structure affords an additional experimental handle to the study of electroluminescence in single nanowires and, furthermore, could be used as a novel approach to two-colour light-emitting devices.

Catalytic hydride vapour phase epitaxy growth of GaN nanowires.

Catalytic growth of GaN nanowires by hydride vapour phase epitaxy is demonstrated. Nickel-gold was used as a catalyst. Nanowire growth was limited to areas patterned with catalyst. Characterization of the nanowires with transmission electron microscopy, x-ray diffraction, and low temperature photoluminescence shows that the nanowires are stoichiometric 2H-GaN single crystals growing in the [0001] orientation when grown on sapphire, with occasional stacking faults along the c-axis as the only defect type observed in most of the wires. A red shift observed in the photoluminescence was too large to be explained by the minor strain observed alone, and was only marginally affected by temperature, suggesting a superposition of several factors.

Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures.

The observation of vanishing electrical resistance in condensed matter has led to the discovery of new phenomena such as, for example, superconductivity, where a zero-resistance state can be detected in a metal below a transition temperature T(c) (ref. 1). More recently, quantum Hall effects were discovered from investigations of zero-resistance states at low temperatures and high magnetic fields in two-dimensional electron systems (2DESs). In quantum Hall systems and superconductors, zero-resistance states often coincide with the appearance of a gap in the energy spectrum. Here we report the observation of zero-resistance states and energy gaps in a surprising setting: ultrahigh-mobility GaAs/AlGaAs heterostructures that contain a 2DES exhibit vanishing diagonal resistance without Hall resistance quantization at low temperatures and low magnetic fields when the specimen is subjected to electromagnetic wave excitation. Zero-resistance-states occur about magnetic fields B = 4/5 Bf and B = 4/9 Bf, where Bf = 2pifm*/e,m* is the electron mass, e is the electron charge, and f is the electromagnetic-wave frequency. Activated transport measurements on the resistance minima also indicate an energy gap at the Fermi level. The results suggest an unexpected radiation-induced, electronic-state-transition in the GaAs/AlGaAs 2DES.