Revealing the Pressure-Induced Phase Transformation of Xenotime TbPO4 via In Situ Photoluminescence Spectroscopy.

The pressure-induced phase transformations of certain rare earth (RE) orthophosphates have attracted broad interest from geoscience to structural ceramics. Studying these transformations has required in situ Raman spectroscopy or synchrotron X-ray diffraction (XRD), each of which suffers from poor signal or limited accessibility, respectively. This study exploits the photoluminescence (PL) of Tb3+ ions and the unique sensitivity of PL to the local bonding environment to interrogate the symmetry-reducing xenotime-monazite phase transformation of TbPO4. At pressures consistent with the XRD-based phase transformation onset pressure of 8.7(6) GPa, PL spectra show new peaks emerging as well as trend changes in the centroids and intensity ratios of certain PL bands. Furthermore, PL spectra of recovered samples show transformation is irreversible. Hysteresis in certain PL band intensity ratios also reveals the stress history in TbPO4. This in situ PL approach can be applied to probe pressure-induced transformations and crystal field distortions in other RE-based oxide compounds.

In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III-V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants.

One possible pathway toward reducing the cost of III-V solar cells is to remove them from their growth substrate by spalling fracture, and then reuse the substrate for the growth of multiple cells. Here we consider the growth of III-V cells on spalled GaAs(100) substrates, which typically have faceted surfaces after spalling. To facilitate the growth of high-quality cells, these faceted surfaces should be smoothed prior to cell growth. In this study, we show that these surfaces can be smoothed during organometallic vapor-phase epitaxy growth, but the choice of epilayer material and modification of the various surfaces by impurities/dopants greatly impacts whether or not the surface becomes smooth, and how rapidly the smoothing occurs. Representative examples are presented along with a discussion of the underlying growth processes. Although this work was motivated by solar cell growth, the methods are generally applicable to the growth of any III-V device on a nonplanar substrate.