A practical guide to pulsed laser deposition.

Nanoscale thin films are widely implemented across a plethora of technological and scientific areas, and form the basis for many advancements that have driven human progress, owing to the high degree of functional tunability based on the chemical composition. Pulsed laser deposition is one of the multiple physical vapour deposition routes to fabricate thin films, employing laser energy to eject material from a target in the form of a plasma. A substrate, commonly a single-crystal oxide, is placed in the path of the plume and acts as a template for the arriving species from the target to coalesce and self-assemble into a thin film. This technique is tremendously useful to produce crystalline films, due to the wide range of atmospheric conditions and the extent of possible chemical complexity of the target. However, this flexibility results in a high degree of complexity, oftentimes requiring rigorous optimisation of the growth parameters to achieve high quality crystalline films with desired composition. In this tutorial review, we aim to reduce the complexity and the barrier to entry for the controlled growth of complex oxides by pulsed laser deposition. We present an overview of the fundamental and practical aspects of pulsed laser deposition, discuss the consequences of tailoring the growth parameters on the thin film properties, and describe in situ monitoring techniques that are useful in gaining a deeper understanding of the properties of the resultant films. Particular emphasis is placed on the general relationships between the growth parameters and the consequent structural, chemical and functional properties of the thin films. In the final section, we discuss the open questions within the field and possible directions to further expand the utility of pulsed laser deposition.

Systematic Material Study Reveals TiNb2 O7 as a Model Wide-Bandgap Photoanode Material for Solar Water Splitting.

This work reveals that photoanodes based on TiNb2 O7 (TNO) powder show remarkable water-oxidation properties including nearly ideal charge-transfer and charge-injection efficiencies. Furthermore, using a simplified photoanode construction and carefully surveying the structural and morphological characteristics of oriented and polycrystalline thin films and powder-based samples revealed that the water-splitting kinetics of TNO is negligibly effected by surface morphology; instead, internal grain boundaries likely play a driving role. The current powder-based TNO photoanodes exhibit ideal water-oxidation kinetics and oxidize water at minimal applied biases under illumination; consequently, TNO exhibits an early onset photocurrent voltage (0.4 V vs. RHE) that rivals that of other state-of-the-art photoanode materials.

Energy Conversion Processes with Perovskite-type Materials.

Mixed oxides derived from the perovskite structure by combination of A- and B-site elements and by partial substitution of oxygen provide an immense playground of physico-chemical properties. Here, we give an account of our own research conducted at the Paul Scherrer Institute on perovskite-type oxides and oxynitrides used in electrochemical, photo(electro)chemical and catalytic processes aimed at facing energy relevant issues.

Investigating the behavior of various cocatalysts on LaTaON2 photoanode for visible light water splitting.

We performed a comparative study on the photoelectrochemical performance of LaTaON2 loaded with NiOx, Ni0.7Fe0.3Ox, CoOx and IrOx as cocatalysts. Ni-based oxides lead to the highest improvement on the photoelectrochemical performance, while CoOx and IrOx also enhance the performance though to a lower extent, but they simultaneously introduce more pseudocapacitive current thus resulting in an inefficient utilization of the photo-generated holes. Repetitive voltage cycling between 1.0 VRHE and 1.6 VRHE transforms the NiOx and Ni0.7Fe0.3Ox into oxyhydroxides known to possess higher catalytic activities. However, these oxyhydroxides lead to lower photoelectrochemical performance compared to the as-loaded oxides, most probably due to the decay of the passivation centers at the photoelectrode-cocatalyst interface. High catalytic activities cannot be achieved without sufficient passivation of surface recombination states. Despite that the photoelectrochemical performance of LaTaON2 can be improved by cocatalysts, the maximum achievable photocurrent density is still not comparable to that reported for other oxynitride compounds. Our study suggests that poor electronic conductivity or severe bulk recombination of the photo-generated electron-hole pairs are the main limiting factors for the photon-to-current conversion efficiency in LaTaON2 photoanodes.

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering.

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

Integration of Li4Ti5O12 Crystalline Films on Silicon Toward High-Rate Performance Lithionic Devices.

The growth of crystalline Li-based oxide thin films on silicon substrates is essential for the integration of next-generation solid-state lithionic and electronic devices including on-chip microbatteries, memristors, and sensors. However, growing crystalline oxides directly on silicon typically requires high temperatures and oxygen partial pressures, which leads to the formation of undesired chemical species at the interface compromising the crystal quality of the films. In this work, we employ a 2 nm gamma-alumina (γ-Al2O3) buffer layer on Si substrates in order to grow crystalline thin films of Li4Ti5O12 (LTO), a well-known active material for lithium-ion batteries. The ultrathin γ-Al2O3 layer enables the formation of a stable heterostructure with sharp interfaces and drastically improves the LTO crystallographic and electrochemical properties. Long-term galvanostatic cycling of 50 nm LTO films in liquid-based half-cells demonstrates a high capacity retention of 91% after 5000 cycles at 100 C. Rate capability tests showcase a specific charge of 56 mA h g-1 at an exceptional C-rate of 5000 C (15 mA cm-2). Moreover, with sub-millisecond current pulse tests, the reported thin-film heterostructure exhibits rapid Li-ion (de)intercalation, which could lead to fast switching timescales in resistive memory devices and electrochemical transistors.

High proton conduction in grain-boundary-free yttrium-doped barium zirconate films grown by pulsed laser deposition.

Reducing the operating temperature in the 500-750 °C range is needed for widespread use of solid oxide fuel cells (SOFCs). Proton-conducting oxides are gaining wide interest as electrolyte materials for this aim. We report the fabrication of BaZr(0.8)Y(0.2)O(3-δ) (BZY) proton-conducting electrolyte thin films by pulsed laser deposition on different single-crystalline substrates. Highly textured, epitaxially oriented BZY films were obtained on (100)-oriented MgO substrates, showing the largest proton conductivity ever reported for BZY samples, being 0.11 S cm(-1) at 500 °C. The excellent crystalline quality of BZY films allowed for the first time the experimental measurement of the large BZY bulk conductivity above 300 °C, expected in the absence of blocking grain boundaries. The measured proton conductivity is also significantly larger than the conductivity values of oxygen-ion conductors in the same temperature range, opening new potential for the development of miniaturized SOFCs for portable power supply.

Materials challenges toward proton-conducting oxide fuel cells: a critical review.

The increasing world population and the need to improve quality of life for a large percentage of human beings are the driving forces for the search for sustainable energy production systems, alternative to fossil fuel combustion. Among the various types of alternative energy production technologies, solid oxide fuel cells (SOFCs) operating at intermediate temperatures (400-700 °C) show the advantage of possible use both for stationary and mobile energy production. To reach the goal of reducing the SOFC operating temperature, proton-conducting oxides are gaining wide interest as electrolyte materials. This critical review provides a broad overview of the most recent progresses obtained tailoring the properties of proton-conducting oxides for fuel cell applications, analyzing and comparing the different strategies proposed to match high-proton conductivity with good chemical stability (170 references).

Electrode materials: a challenge for the exploitation of protonic solid oxide fuel cells.

High temperature proton conductor (HTPC) oxides are attracting extensive attention as electrolyte materials alternative to oxygen-ion conductors for use in solid oxide fuel cells (SOFCs) operating at intermediate temperatures (400-700 °C). The need to lower the operating temperature is dictated by cost reduction for SOFC pervasive use. The major stake for the deployment of this technology is the availability of electrodes able to limit polarization losses at the reduced operation temperature. This review aims to comprehensively describe the state-of-the-art anode and cathode materials that have so far been tested with HTPC oxide electrolytes, offering guidelines and possible strategies to speed up the development of protonic SOFCs.

Ionic conductivity in oxide heterostructures: the role of interfaces.

Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

Black-Si as a Photoelectrode.

The fabrication and characterization of photoanodes based on black-Si (b-Si) are presented using a photoelectrochemical cell in NaOH solution. B-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO2 using atomic layer deposition (ALD) with a top layer of CoO x cocatalyst deposited by pulsed laser deposition (PLD). Low reflectivity R < 5 % of b-Si over the entire visible and near-IR ( λ < 2   µ m) spectral range was favorable for the better absorption of light, while an increased surface area facilitated larger current densities. The photoelectrochemical performance of the heterostructured b-Si photoanode is discussed in terms of the n-n junction between b-Si and TiO2.

Examining the surface evolution of LaTiOxNy an oxynitride solar water splitting photocatalyst.

LaTiOxNy oxynitride thin films are employed to study the surface modifications at the solid-liquid interface that occur during photoelectrocatalytic water splitting. Neutron reflectometry and grazing incidence x-ray absorption spectroscopy were utilised to distinguish between the surface and bulk signals, with a surface sensitivity of 3 nm. Here we show, contrary to what is typically assumed, that the A cations are active sites that undergo oxidation at the surface as a consequence of the water splitting process. Whereas, the B cations undergo local disordering with the valence state remaining unchanged. This surface modification reduces the overall water splitting efficiency, but is suppressed when the oxynitride thin films are decorated with a co-catalyst. With this example we present the possibilities of surface sensitive studies using techniques capable of operando measurements in water, opening up new opportunities for applications to other materials and for surface sensitive, operando studies of the water splitting process.

Phonon spectra of pure and acceptor doped BaZrO3 investigated with visible and UV Raman spectroscopy.

We report results from visible and UV Raman spectroscopy studies of the phonon spectra of a polycrystalline sample of the prototypical perovskite type oxide BaZrO3 and a 500 nm thick film of its Y-doped, proton conducting, counterpart BaZr0.8Y0.2O2.9. Analysis of the Raman spectra measured using different excitation energies (between 3.44 eV and 5.17 eV) reveals the activation of strong resonance Raman effects involving all lattice vibrational modes. Specifically, two characteristic energies were identified for BaZrO3, one around 5 eV and one at higher energy, respectively, and one for BaZr0.8Y0.2O2.9, above 5 eV. Apart from the large difference in spectral intensity between the non-resonant and resonant conditions, the spectra are overall similar to each other, suggesting that the vibrational spectra of the perovskites are stable when investigated using an UV laser as excitation source. These results encourage further use of UV Raman spectroscopy as a novel approach for the study of lattice vibrational dynamics and local structure in proton conducting perovskites, and open up for, e.g., time-resolved experiments on thin films targeted at understanding the role of lattice vibrations in proton transport in these kinds of materials.

Interface Effects on the Ionic Conductivity of Doped Ceria-Yttria-Stabilized Zirconia Heterostructures.

Multilayered heterostructures of Ce0.85Sm0.15O2-δ and Y0.16Zr0.92O2-δ of a high crystallographic quality were fabricated on (001)-oriented MgO single crystal substrates. Keeping the total thickness of the heterostructures constant, the number of ceria-zirconia bilayers was increased while reducing the thickness of each layer. At each interface Ce was found primarily in the reduced, 3+ oxidation state in a layer extending about 2 nm from the interface. Concurrently, the conductivity decreased as the thickness of the layers was reduced, suggesting a progressive confinement of the charge transport along the YSZ layers. The comparative analysis of the in-plane electrical characterization suggests that the contribution to the total electrical conductivity of these interfacial regions is negligible. For the smallest layer thickness of 2 nm the doped ceria layers are electrically insulating and the ionic transport only occurs through the zirconia layers. This is explained in terms of a reduced mobility of the oxygen vacancies in the highly reduced ceria.

Enhanced Proton Conductivity in Y-Doped BaZrO3 via Strain Engineering.

The effects of stress-induced lattice distortions (strain) on the conductivity of Y-doped BaZrO3, a high-temperature proton conductor with key technological applications for sustainable electrochemical energy conversion, are studied. Highly ordered epitaxial thin films are grown in different strain states while monitoring the stress generation and evolution in situ. Enhanced proton conductivity due to lower activation energies is discovered under controlled conditions of tensile strain. In particular, a twofold increased conductivity is measured at 200 °C along a 0.7% tensile strained lattice. This is at variance with conclusions coming from force-field simulations or the static calculations of diffusion barriers. Here, extensive first-principles molecular dynamic simulations of proton diffusivity in the proton-trapping regime are therefore performed and found to agree with the experiments. The simulations highlight that compressive strain confines protons in planes parallel to the substrate, while tensile strain boosts diffusivity in the perpendicular direction, with the net result that the overall conductivity is enhanced. It is indeed the presence of the dopant and the proton-trapping effect that makes tensile strain favorable for proton conduction.

Determination of Conduction and Valence Band Electronic Structure of LaTiOx Ny Thin Film.

The nitrogen substitution into the oxygen sites of several oxide materials leads to a reduction of the band gap to the visible-light energy range, which makes these oxynitride semiconductors potential photocatalysts for efficient solar water splitting. Oxynitrides typically show a different crystal structure compared to the pristine oxide material. As the band gap is correlated to both the chemical composition and the crystal structure, it is not trivial to distinguish which modifications of the electronic structure induced by the nitrogen substitution are related to compositional and/or structural effects. Here, X-ray emission and absorption spectroscopy are used to investigate the electronic structures of orthorhombic perovskite LaTiOx Ny thin films in comparison with films of the pristine oxide LaTiOx with similar orthorhombic structure and cationic oxidation state. Experiment and theory show the expected upward shift in energy of the valence band maximum that reduces the band gap as a consequence of the nitrogen incorporation. This study also shows that the conduction band minimum, typically considered almost unaffected by nitrogen substitution, undergoes a significant downward shift in energy. For a rational design of oxynitride photocatalysts, the observed changes of both the unoccupied and occupied electronic states have to be taken into account to justify the total band-gap narrowing induced by the nitrogen incorporation.

In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction.

Many properties of materials can be changed by varying the interatomic distances in the crystal lattice by applying stress. Ideal model systems for investigations are heteroepitaxial thin films where lattice distortions can be induced by the crystallographic mismatch with the substrate. Here we describe an in situ simultaneous diagnostic of growth mode and stress during pulsed laser deposition of oxide thin films. The stress state and evolution up to the relaxation onset are monitored during the growth of oxygen ion conducting Ce0.85Sm0.15O2-δ thin films via optical wafer curvature measurements. Increasing tensile stress lowers the activation energy for charge transport and a thorough characterization of stress and morphology allows quantifying this effect using samples with the conductive properties of single crystals. The combined in situ application of optical deflectometry and electron diffraction provides an invaluable tool for strain engineering in Materials Science to fabricate novel devices with intriguing functionalities.

Towards the next generation of solid oxide fuel cells operating below 600 °c with chemically stable proton-conducting electrolytes.

The need for reducing the solid oxide fuel cell (SOFC) operating temperature below 600 °C is imposed by cost reduction, which is essential for widespread SOFC use, but might also disclose new applications. To this aim, high-temperature proton-conducting (HTPC) oxides have gained widespread interest as electrolyte materials alternative to oxygen-ion conductors. This Progress Report describes recent developments in electrolyte, anode, and cathode materials for protonic SOFCs, addressing the issue of chemical stability, processability, and good power performance below 600 °C. Different fabrication methods are reported for anode-supported SOFCs, obtained using state-of-the-art, chemically stable proton-conducting electrolyte films. Recent findings show significant improvements in the power density output of cells based on doped barium zirconate electrolytes, pointing out towards the feasibility of the next generation of protonic SOFCs, including a good potential for the development of miniaturized SOFCs as portable power supplies.

Room-temperature giant persistent photoconductivity in SrTiO3/LaAlO3 heterostructures.

SrTiO(3)/LaAlO(3) interfaces show an unprecedented photoconductivity effect that is persistent even at room temperature and giant as it gives rise to a conductivity increase of about 5 orders of magnitude at room temperature. The persistent photoconductivity effects play a paramount role in the still controversial intrinsic behavior of the SrTiO(3)/LaAlO(3) interfaces, as even a limited exposure to visible light is able to strongly modify the electrical transport properties of the interface even above room temperature, while only an appropriate thermal treatment in a dark environment can completely suppress the persistent photoconductivity effect unveiling the intrinsic conduction mechanism of the interface. Moreover, our study demonstrates that the origin of the high conductivity, revealed at the STO/LAO interface at room temperature, is purely electronic.

Tensile lattice distortion does not affect oxygen transport in yttria-stabilized zirconia-CeO2 heterointerfaces.

Biaxially textured epitaxial thin-film heterostructures of ceria and 8 mol % yttria-stabilized zirconia (8YSZ) were grown using pulsed laser deposition (PLD) with the aim to unravel the effect of the interfacial conductivity on the charge transport properties. Five different samples were fabricated, keeping the total thickness constant (300 nm), but with a different number of heterointerfaces (between 4 and 60). To remove any potential contribution of the deposition substrate to the total conductivity, the heterostructures were grown on (001)-oriented MgO single-crystalline wafers. Layers free of high-angle grain boundaries and with low density of misfit dislocations were obtained, as revealed by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HR-TEM) analysis. The crystallographic quality of these samples allowed the investigation of their conduction properties, suppressing any transport effects along grain boundaries and/or interfacial dislocation pathways. Electrochemical impedance spectroscopy (EIS) and secondary ion mass spectroscopy (SIMS) measurements showed that for these samples the interfacial conductivity has a negligible effect on the transport properties.