Anisotropic photoluminescence of nonpolar ZnO epilayers and ZnO/Zn1-xMgxO multiple quantum wells grown on LiGaO2 substrate.

The temperature-dependent polarized photoluminescence spectra of nonpolar ZnO samples were investigated by 263 nm laser. The degree of polarization (DOP) of m-plane quantum wells changes from 76% at 10 K to 40% at 300 K, which is much higher than that of epilayer. The strong anisotropy was presumably attributed to the enhanced confinement effect of a one-dimension confinement structure formed by the intersection of quantum well and basal stacking fault. The polarization of laser beam also has an influence on the DOP. It is assumed that the luminescence polarization should be affected not only by the in-plane strains but also the microstructural defects, which do modify the electronic band structure.

Growth and stability of rocksalt Zn1-xMgxO epilayers and ZnO/MgO superlattice on MgO (100) substrate by molecular beam epitaxy.

Zn1-xMgxO films with x = 0.04-0.50 grown on MgO (100) substrates by molecular beam epitaxy retain the rocksalt (rs) crystal structure and grow epitaxially for x ≥ 0.17. In addition, the rs-ZnO epilayer is observed to be stable up to a thickness of 5 nm and also in a ZnO/MgO superlattice sample. However, a portion of the superlattice has transformed to wurtzite (wz)-structure islands in a self-accommodated manner during growth. The transformation is a combination of a Bain distortion, an in-plane rotation of 14.5°, and a Peierls distortion, resulting in an orientation relationship of (100)rs//(101̄0)wz and 〈011〉rs ∼//〈1̄21̄3〉wz. In such a manner, the volume expansion is only necessary along the growth direction and the in-plane strains can be minimized. A negative pressure generated during the transformation of ZnO stabilizes the MgO into a wurtzite structure.

Programmable computing with a single magnetoresistive element.

The development of transistor-based integrated circuits for modern computing is a story of great success. However, the proved concept for enhancing computational power by continuous miniaturization is approaching its fundamental limits. Alternative approaches consider logic elements that are reconfigurable at run-time to overcome the rigid architecture of the present hardware systems. Implementation of parallel algorithms on such 'chameleon' processors has the potential to yield a dramatic increase of computational speed, competitive with that of supercomputers. Owing to their functional flexibility, 'chameleon' processors can be readily optimized with respect to any computer application. In conventional microprocessors, information must be transferred to a memory to prevent it from getting lost, because electrically processed information is volatile. Therefore the computational performance can be improved if the logic gate is additionally capable of storing the output. Here we describe a simple hardware concept for a programmable logic element that is based on a single magnetic random access memory (MRAM) cell. It combines the inherent advantage of a non-volatile output with flexible functionality which can be selected at run-time to operate as an AND, OR, NAND or NOR gate.

Composition fluctuations in dilute nitride (Ga,In)(N,As)/GaAs heterostructures measured by low-loss electron energy-loss spectroscopy.

We report on the investigation of composition fluctuations in epitaxially grown (Ga,In)(N,As) epilayers on GaAs(001) substrates by using electron energy-loss spectroscopy (EELS). The N and In concentrations are determined locally with a probe size of about 8 nm from the low-loss EELS measurements. We demonstrate that the small amount of N incorporating in dilute nitride alloys can be measured quantitatively by the plasmon energy shift with respect to a GaAs reference, and that the In content is analyzed simultaneously from the In 4d transitions, which have been isolated from the overlapping Ga 3d transitions. Our spatially resolved EELS results are utilized to discuss the origin of the inherent composition fluctuations and their influences on the morphological instabilities during epitaxial growth.

Magnetic properties of epitaxial Heusler alloy (Co(2/3)Fe(1/3))(3+x)Si(1-x)/GaAs(001) hybrid structures.

The magnetic properties of full Heusler alloy (Co(2/3)Fe(1/3))(3+x)Si(1-x)/GaAs(001) hybrid structures grown by molecular beam epitaxy have been investigated. The magnetic moment, the coercive field and the in-plane magnetic anisotropy of (Co(2/3)Fe(1/3))(3+x)Si(1-x) films with various Si compositions (-0.46≤x≤1) are discussed. The increase in amount of Si results in a significant reduction in the cubic magnetocrystalline anisotropy constant |K(1)(eff)|. K(1)(eff) changes sign and saturates near the stoichiometric composition of Co(2)FeSi and the easy axis of the cubic component changes from the [Formula: see text] direction to the [Formula: see text] direction accordingly. However, due to the presence of a dominating uniaxial magnetic anisotropy component, the easy axis of magnetization in total is shifted to the [110] direction. The saturation magnetization of stoichiometric Co(2)FeSi films turned out to be 1250 ± 120 emu cm(-3), being equivalent to 6.1 ± 0.57 (µ(B)/formula unit (fu)). The relatively close value of magnetic moment to the theoretically expected integer value (6 µ(B)) suggests that Co(2)FeSi films could be half-metallic ferromagnets.

Nonlinear terahertz response of -type GaAs.

Excitation of an n-type GaAs layer by intense ultrashort terahertz pulses causes coherent emission at 2 THz. Phase-resolved nonlinear propagation experiments show a picosecond decay of the emitted field, despite the ultrafast carrier-carrier scattering at a sample temperature of 300 K. While the linear THz response is in agreement with the Drude response of free electrons, the nonlinear response is dominated by the super-radiant decay of optically inverted impurity transitions. A quantum mechanical discrete state model using the potential of the disordered impurities accounts for all experimental observations.

Colossal magnetic moment of Gd in GaN.

We investigate the magnetic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this diluted magnetic semiconductor. The average value of the moment per Gd atom is found to be as high as 4000 micro(B) as compared to its atomic moment of 8 micro(B). The long-range spin polarization of the GaN matrix by Gd is also reflected in the circular polarization of magnetophotoluminescence measurements. Moreover, the materials system is found to be ferromagnetic above room temperature in the entire concentration range under investigation (7 x 10(15) to 2 x 10(19) cm(-3)). We propose a phenomenological model to understand the macroscopic magnetic behavior of the system. Our study reveals a close connection between the observed ferromagnetism and the colossal magnetic moment of Gd.

Polarization of valence band holes in the (Ga,Mn)as diluted magnetic semiconductor.

We report on direct measurements of the impurity band hole polarization in the diluted magnetic semiconductor (Ga,Mn)As. The polarization of impurity band holes in a magnetic field is strongly enhanced by antiferromagnetic exchange interaction with Mn ions. The temperature dependence of the hole polarization shows a strong increase of this polarization below the Curie temperature. We show that the ground state of the impurity band is formed by uniaxial stress split F=+/-1 states of antiferromagnetically coupled Mn ions (S=5/2) and valence band holes (J=3/2). The gap between the Mn acceptor related impurity band and the valence band is directly measured in a wide range of Mn content.

Quantum confinement in monatomic Cu chains on Cu(111).

The existence of one-dimensional (1D) electronic states in Cu/Cu(111) chains assembled by atomic manipulation is revealed by low-temperature scanning tunneling spectroscopy and density functional theory (DFT) calculations. Our experimental analysis of the chain-localized electron dynamics shows that the dispersion is fully described within a 1D tight-binding approach. DFT calculations confirm the confinement of unoccupied states to the chain in the relevant energy range, along with a significant extension of these states into the vacuum region.

Two-dimensional coarsening kinetics of reconstruction domains: GaAs(001)-beta(2 x 4).

We study the nonconserved coarsening kinetics of a reconstructed semiconductor surface. The domain size evolution is obtained in situ by time-resolved surface x-ray diffraction. The system exhibits four equivalent domain types with two nonequivalent types of domain boundaries. Small domains are prepared by molecular beam epitaxy deposition of one GaAs layer. We find the correlation lengths of the domain size distribution to depend on time as l is proportional to t(0.42+/-0.05) in the half-order reflections and l is proportional to t(0.22+/-0.05) in the quarter-order reflections. The fraction of the higher energy domain boundaries increases as lnt.

Phase-resolved nonlinear response of a two-dimensional electron gas under femtosecond intersubband excitation.

Strong electric-field transients resonant to intersubband transitions in n-type modulation-doped GaAs/AlGaAs quantum wells induce coherent Rabi oscillations, which are demonstrated by a phase-resolved measurement of the light emitted by the sample. The time evolution of the intersubband polarization is influenced by Coulomb-mediated many-body effects. The subpicosecond period and the phase of the Rabi oscillations are controlled by the properties of the midinfrared driving pulse.

Magnetologic with alpha-MnAs thin films.

Taking advantage of the spin information in present day computing is expected to yield an enormous increase in efficiency. A promising ferromagnetic material compatible with semiconductors for room temperature applications is MnAs. By sensitive cantilever beam magnetometry, we discovered that alpha-MnAs films on GaAs(001) exhibit an additional small out-of-plane component of the magnetization which is magnetically coupled with the dominant in-plane magnetization. We demonstrate that by regarding the two components as independent inputs, the alpha-MnAs layer can be utilized as a logic gate with nonvolatile output. The logic functionality of the layer can be preselected to be AND or OR at run time, thus offering the perspective for programmable magnetologic devices.

Low temperature near-field luminescence studies of localized and delocalized excitons in quantum wires.

Excitons in a GaAs quantum wire were studied in high-resolution photoluminescence experiments performed at a temperature of about 10 K with a spatial resolution of 160 nm and a spectral resolution of 100 microeV. We report the observation of quasi-one-dimensional excitons which are delocalized over a length of up to several micrometres along the quantum wire. Such excitons give rise to a 10 meV broad luminescence band, representing a superposition of transitions between different delocalized states. In addition, we find a set of sharp luminescence peaks from excitons localized on a sub150 nm length scale. Theoretical calculations of exciton states in a disordered quasi-one-dimensional potential reproduce the experimental results.

Femtosecond near-field spectroscopy: carrier relaxation and transport in single quantum wires.

Quasi-two-colour femtosecond pump and probe spectroscopy and near-field scanning optical microscopy are combined to study the carrier dynamics in single semiconductor nanostructures. In temporally, spectrally and spatially resolved measurements with a time resolution of 200 fs and a spatial resolution of 200 nm, the non-linear change in reflectivity of a single quantum wire is mapped in real space and time. The experiments show that carrier relaxation into a single quantum wire occurs on a 100 fs time scale at room temperature. Evidence is given for a transient unipolar electron transport along the wire axis on a picosecond time and 100 nm length scale.

Ferromagnetism of MnAs studied by heteroepitaxial films on GaAs(001).

Thin epitaxial films of MnAs--promising candidates for the spin injection into semiconductors--are well known to undergo simultaneously a first-order structural and magnetic phase transition at 10-40 degrees C. The evolution of stress and magnetization of MnAs/GaAs(001), both measured quantitatively with our cantilever beam magnetometer at the coexistence region of alpha-MnAs and beta-MnAs, reveal an orthorhombically distorted unit cell of the ferromagnetic phase, which provides important clues on the origin of ferromagnetism in MnAs.

Spin filtering in a hybrid ferromagnetic-semiconductor microstructure.

We fabricated a hybrid structure in which cobalt and permalloy micromagnets produce a local in-plane spin-dependent potential barrier for high-mobility electrons at the GaAs/AlGaAs interface. Spin effects are observed in ballistic transport in the range of tens of mT of the external field and are attributed to switching between Zeeman and Stern-Gerlach modes--the former dominating at low electron densities.

Time-resolved near-field optics: exciton transport in semiconductor nanostructures.

We present a systematic, temperature-dependent study of excitonic real-space transfer into single GaAs quantum wires using time-resolved low-temperature near-field luminescence spectroscopy. Excitons generated by local short pulse optical excitation in a 250 nm spot undergo diffusive transport over a length of several micrometres and are subsequently trapped into the quantum wire by optical phonon emission. The effect of local energy barriers in the vicinity of the quantum wire on the real-space transfer dynamics is monitored directly by mapping the time-resolved quantum wire luminescence. Experiments at variable temperatures are compared to numerical simulations based on drift-diffusive model calculations, and the spatio-temporal evolution of the two-dimensional exciton distribution within the nanostructure is visualized.

Transport and lifetime enhancement of photoexcited spins in GaAs by surface acoustic waves.

We demonstrate spin transport and spin lifetime enhancement in GaAs quantum wells induced by the traveling piezoelectric field of a surface acoustic wave (SAW). Spin transport lengths of about 3 microm corresponding to spin relaxation times during transport over 1 ns are observed, which are considerably longer than the exciton spin diffusion lengths in the absence of a SAW. The slow spin relaxation is attributed to a reduced electron-hole exchange interaction, when the carriers are spatially separated by the lateral potential modulation induced by the SAW.

Room-temperature spin injection from Fe into GaAs.

Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.

Quantum mechanical repulsion of exciton levels in a disordered quantum well.

Spatially resolved photoluminescence spectra of a single quantum well are recorded by near-field spectroscopy. A set of over four hundred spectra displaying sharp emission lines from localized excitons is subject to a statistical analysis of the two-energy autocorrelation function. An accurate comparison with a quantum theory of the exciton center-of-mass motion in a two-dimensional spatially correlated disordered potential reveals clear signatures of quantum mechanical energy level repulsion, giving the spatial and energetic correlations of excitons in disordered quantum systems.