Electronic transitions and vibrational properties of bulk and monolayer g-C3N4, and a g-C3N4/MoS2 heterostructure from a DFT study.

Successful recognition of a dynamically stable carbonitride structure revealed that unlike other planar layered structures in the case of g-C3N4 the stable configurations are distorted [J. Wang et al., Chem. Mater., 2017, 29(7), 2694-2707, DOI: https://doi.org/10.1021/acs.chemmater.6b02969.]. This generates interest in a detailed study of the possibilities of controlling the structure and its properties both in its pristine and heterostructure forms. Here, we present the results of the investigation of dynamically stable bulk and monolayer g-C3N4, and a g-C3N4/MoS2 heterostructure. The bulk g-C3N4 was found to be an indirect band gap semiconductor exhibiting an indirect-to-direct band gap transition upon dimensionality reduction. In the case of the heterostructure, the analysis of partial density of states shows a charge transfer from nitrogen ions in g-C3N4 to the MoS2 layer. The Raman spectra of bulk g-C3N4 are discussed in detail, and the changes occurring in the spectra upon the transition to the monolayer form and in the g-C3N4/MoS2 heterostructure are demonstrated. It was found that the characteristic features of such an atomic transition can be seen in the region below 300 cm-1 and between 700 and 800 cm-1.

Phonon dynamics in MoSi2N4: insights from DFT calculations.

We have reported the density functional theory investigations on the monolayered, 2 layered and bulk MoSi2N4 in three structural modifications called α1 [Y.-L. Hong, et al., Chemical Vapor Deposition of Layered Two-Dimensional MoSi2N4 Materials, Science, 2020, 369(6504), 670-674, DOI: 10.1126/science.abb7023], α2 and α3 [Y. Yin, Q. Gong, M. Yi and W. Guo, Emerging Versatile Two-Dimensional MoSi2N4 Family, Adv. Funct. Mater., 2023, 2214050, DOI: 10.1002/adfm.202214050]. We showed that in the case of monolayers the difference in total energies is less than 0.1 eV between α1 and α3 phases, and less than 0.2 eV between α1 and α2 geometries. The most energetically favorable layer stacking for the bulk structures of each phase was investigated. All considered modifications are dynamically stable from a single layer to a bulk structure in energetically favorable stacking. Raman spectra for the monolayered, 2 layered and bulk structures were simulated and the vibrational analysis was performed. The main difference in the obtained spectra is associated with the position of the strongest band which depends on the Mo-N bond length. According to the obtained data, we can conclude that the Raman line at 348 cm-1 in the experimental spectra of MoSi2N4 can have more complex explanation than just Γ-point Raman-active vibration as was discussed before in [Y.-L. Hong, et al., Chemical Vapor Deposition of Layered Two-Dimensional MoSi2N4 Materials, Science, 2020, 369(6504), 670-674, DOI: 10.1126/science.abb7023].

The electronic structure and spin states of 2D graphene/VX2 (X = S, Se) heterostructures.

The structural, magnetic and electronic properties of 2D VX2 (X = S, Se) monolayers and graphene/VX2 heterostructures were studied using a DFT+U approach. It was found that the stability of the 1T phases of VX2 monolayers is linked to strong electron correlation effects. The study of vertical junctions comprising of graphene and VX2 monolayers demonstrated that interlayer interactions lead to the formation of strong spin polarization of both graphene and VX2 fragments while preserving the linear dispersion of graphene-originated bands. It was found that the insertion of Mo atoms between the layers leads to n-doping of graphene with a selective transformation of graphene bands keeping the spin-down Dirac cone intact.

Nonstoichiometric Phases of Two-Dimensional Transition-Metal Dichalcogenides: From Chalcogen Vacancies to Pure Metal Membranes.

Two-dimensional (2D) membranes consisting of a single layer of Mo atoms were recently manufactured [ Adv. Mater. 2018 , 30 , 1707281 ] from MoSe2 sheets by sputtering Se atoms using an electron beam in a transmission electron microscope. This is an unexpected result as formation of Mo clusters should energetically be more favorable. To get microscopic insights into the energetics of realistic Mo membranes and nonstoichiometric phases of transition-metal dichalcogenides (TMDs) MaXb, where M = Mo and W and X = S, Se, and Te, we carry out first-principles calculations and demonstrate that the membranes, which can be referred to as metallic quantum dots embedded into a semiconducting matrix, can be stabilized by charge transfer. We also show that an ideal neutral 2D Mo or W sheet is not flat but a corrugated structure, with a square lattice being the lowest-energy configuration. We further demonstrate that several intermediate nonstoichiometric phases of TMDs are possible as they have lower formation energies than pure metal membranes. Among them, the orthorhombic metallic 2D M4X4 phase is particularly stable. Finally, we study the properties of this phase in detail and discuss how it can be manufactured by the top-down approaches.