Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitters.

We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (µTP). After the introduction of the µTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch. The micro-transfer-printed SOAs provide 10 dB small-signal gain around 1560 nm with a 3 dB bandwidth of 30 nm. Secondly, an integrated transmitter combining an on-chip widely tunable laser and a doped-Si Mach-Zehnder modulator (MZM) is demonstrated. The laser has a continuous tuning range over 40 nm and the transmitter is capable of 40 Gbps non-return-to-zero (NRZ) back-to-back transmission at wavelengths ranging from 1539 to 1573 nm. These demonstrations pave the way for the realization of complex and fully integrated photonic systems-on-chip with integrated III-V-on-Si components, and this technique is transferable to other material films and devices that can be released from their native substrate.

High wall-plug efficiency and narrow linewidth III-V-on-silicon C-band DFB laser diodes.

We present recent results on compact and power efficient C-band distributed feedback lasers through adhesive bonding of a III-V die onto a silicon-on-insulator circuit. A wall-plug efficiency up to 16% is achieved for bias currents below 40 mA. The laser cavity is 180 µm long and a single facet output power up to 11 mW is measured at 20 °C by incorporating a broadband reflector in the silicon waveguide at one side of the cavity. Single mode operation at 1567 nm with a side mode suppression ratio of around 55 dB is demonstrated. By controlling the phase of the external feedback, the laser linewidth is decreased to 28 kHz. Measurement result shows a low relative intensity noise below -150 dB/Hz at 60 mA up to 6 GHz. We also report 20 and 10 Gbps data transmission at a bias current of 50 mA at 20 °C and 40 °C, respectively.

Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range.

In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing (µTP) technology. Two types of pre-fabricated III-V semiconductor optical amplifiers (SOAs) with a photoluminescence (PL) peak around 1500 nm and 1550 nm are micro-transfer printed on two silicon laser cavities. The laser cavities are fabricated in imec's silicon photonics (SiPh) pilot line on 200 mm silicon-on-insulator (SOI) wafers with a 400 nm thick silicon device layer. By combining the outputs of the two laser cavities on chip, wavelength tunability over S+C+L-bands is achieved.

Heterogeneous integration of Si photodiodes on silicon nitride for near-visible light detection.

Silicon nitride (SiN) is used extensively to complement the standard silicon photonics portfolio. However, thus far demonstrated light sources and detectors on SiN have predominantly focused on telecommunication wavelengths. Yet, to unlock the full potential of SiN, integrated photodetectors for wavelengths below 850 nm are essential to serve applications such as biosensing, imaging, and quantum photonics. Here, we report the first, to the best of our knowledge, microtransfer printed Si p-i-n photodiodes on a commercially available SiN platform to target wavelengths <850 nm. A novel heterogeneous integration process flow was developed to offer a high microtransfer printing yield. Moreover, these devices are fabricated with CMOS compatible and wafer-scale technology.

A Miniaturised, Fully Integrated NDIR CO2 Sensor On-Chip.

In this paper, we present a fully integrated Non-dispersive Infrared (NDIR) CO2 sensor implemented on a silicon chip. The sensor is based on an integrating cylinder with access waveguides. A mid-IR LED is used as the optical source, and two mid-IR photodiodes are used as detectors. The fully integrated sensor is formed by wafer bonding of two silicon substrates. The fabricated sensor was evaluated by performing a CO2 concentration measurement, showing a limit of detection of ∼750 ppm. The cross-sensitivity of the sensor to water vapor was studied both experimentally and numerically. No notable water interference was observed in the experimental characterizations. Numerical simulations showed that the transmission change induced by water vapor absorption is much smaller than the detection limit of the sensor. A qualitative analysis on the long term stability of the sensor revealed that the long term stability of the sensor is subject to the temperature fluctuations in the laboratory. The use of relatively cheap LED and photodiodes bare chips, together with the wafer-level fabrication process of the sensor provides the potential for a low cost, highly miniaturized NDIR CO2 sensor.

Micro-transfer-printed III-V-on-silicon C-band distributed feedback lasers.

We report on single-mode C-band distributed feedback lasers fabricated through micro-transfer-printing of semiconductor optical amplifier coupons fabricated on a InP source wafer onto a silicon-on-insulator photonic circuit. The coupons are micro-transfer printed on quarter-wave shifted gratings defined in SiN deposited on the silicon waveguide. Alignment-tolerant adiabatic tapers are used to efficiently couple light from the hybrid III-V/Si waveguide to the Si waveguide circuit. 80 mA threshold current and a maximum single-sided waveguide-coupled output power above 6.9 mW is obtained at 20 °C. Single mode operation around 1558 nm with > 33 dB side mode suppression ratio is demonstrated. Micro-transfer printing-based heterogeneous integration is promising for the wafer-level integration of advanced laser sources on complex silicon photonic integrated circuit platforms without changing the foundry process flow.

Mid-IR sensing platform for trace analysis in aqueous solutions based on a germanium-on-silicon waveguide chip with a mesoporous silica coating for analyte enrichment.

A novel platform based on evanescent wave sensing in the 6.5 to 7.5 µm wavelength range is presented with the example of toluene detection in an aqueous solution. The overall sensing platform consists of a germanium-on-silicon waveguide with a functionalized mesoporous silica cladding and integrated microlenses for alignment-tolerant back-side optical interfacing with a tunable laser spectrometer. Hydrophobic functionalization of the mesoporous cladding allows enrichment of apolar analyte molecules and prevents strong interaction of water with the evanescent wave. The sensing performance was evaluated for aqueous toluene standards resulting in a limit of detection of 7 ppm. Recorded adsorption/desorption profiles followed Freundlich adsorption isotherms with rapid equilibration and resulting sensor response times of a few seconds. This indicates that continuous monitoring of contaminants in water is possible. A significant increase in LOD can be expected by likely improvements to the spectrometer noise floor which, expressed as a relative standard deviation of 100% lines, is currently in the range of 10-2A.U.

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications.

We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.

50 GBd PAM4 transmitter with a 55nm SiGe BiCMOS driver and silicon photonic segmented MZM.

We demonstrate an optical transmitter consisting of a limiting SiGe BiCMOS driver co-designed and co-packaged with a silicon photonic segmented traveling-wave Mach-Zehnder modulator (MZM). The MZM is split into two traveling-wave segments to increase the bandwidth and to allow a 2-bit DAC functionality. Two limiting driver channels are used to drive these segments, allowing both NRZ and PAM4 signal generation in the optical domain. The voltage swing as well as the peaking of the driver output are tunable, hence the PAM4 signal levels can be tuned and possible bandwidth limitations of the MZM segments can be partially alleviated. Generation of 50 Gbaud and 53 Gbaud PAM4 yields a TDECQ of 2.8 and 3.8 dB with a power efficiency of 3.9 and 3.6 pJ/bit, respectively; this is the best reported efficiency for co-packaged silicon transmitters for short-reach datacenter interconnects at these data rates. With this work, we show the potential of limiting drivers and segmented traveling-wave modulators in 400G capable short-reach optical interconnects.

27 dB gain III-V-on-silicon semiconductor optical amplifier with > 17 dBm output power.

Hybrid III-V-on-silicon semiconductor optical amplifiers with high-gain and high-output-power are important in many applications such as transceivers, integrated microwave photonics and photonic beamforming. In this work we present the design, fabrication and characterization of high-gain, high-output-power III-V-on-silicon semiconductor optical amplifiers. The amplifiers support a hybrid III-V/Si optical mode to reduce confinement in the active region and increase the saturation power. A small-signal gain of 27 dB, a saturation power of 17.24 dBm and an on-chip output power of 17.5 dBm is measured for a current density of 4.9 kA/cm2 (power consumption of 540 mW) at room temperature for an amplifier with a total length of 1.45 mm. The amplifiers were realized using a 6 quantum well InGaAsP active region, which was previously used to fabricate high-speed directly modulated DFB lasers, enabling their co-integration.

High-power single transverse and polarization mode VCSEL for silicon photonics integration.

We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.

On-Chip Non-Dispersive Infrared CO2 Sensor Based On an Integrating Cylinder.

In this paper, we propose a novel, miniaturized non-dispersive infrared (NDIR) CO2 sensor implemented on a silicon chip. The sensor has a simple structure, consisting of a hollow metallic cylindrical cavity along with access waveguides. A detailed analysis of the proposed sensor is presented. Simulation with 3D ray tracing shows that an integrating cylinder with 4 mm diameter gives an equivalent optical path length of 3 . 5 cm. The sensor is fabricated using Deep Reactive Ion Etching (DRIE) and wafer bonding. The fabricated sensor was evaluated by performing a CO2 concentration measurement, showing a limit of detection of ∼100 ppm. The response time of the sensor is only ∼2.8 s, due to its small footprint. The use of DRIE-based waveguide structures enables mass fabrication, as well as the potential co-integration of flip-chip integrated midIR light-emitting diodes (LEDs) and photodetectors, resulting in a compact, low-power, and low-cost NDIR CO2 sensor.

12.5 Gbit/s discretely tunable InP-on-silicon filtered feedback laser with sub-nanosecond wavelength switching times.

A heterogeneously integrated InP-on-silicon fast tunable filtered feedback laser is demonstrated. The laser device consists of a main Fabry-Pérot cavity connected to an integrated arrayed waveguide grating of which the outputs form external cavities in which semiconductor optical amplifiers can be switched to provide single-mode operation and tunability. The laser can operate at four different wavelengths whereby switching between each wavelength channel is done within one nanosecond. For each wavelength channel 12.5 Gbit/s NRZ-OOK direct modulation is demonstrated. The combination of fast wavelength switching with straightforward wavelength control and high-speed direct modulation characteristics make the demonstrated laser structure very attractive for use in optical packet or burst switching systems.

Silicon photonics traveling wave photodiode with integrated star coupler for high-linearity mm-wave applications.

Next-generation wireless communication will require increasingly faster data links. To achieve those higher data rates, the shift towards mmWave frequencies and smaller cell sizes will play a major role. Radio-over-Fiber has been proposed as a possible architecture to allow for this shift but is nowadays typically implemented digitally, as CPRI (Common Public Radio Interface). Centralization will be important to keep next-generation architectures cost-effective and therefore shared optical amplification at the central office could be preferable. Unfortunately, limited power handling capabilities of photodetectors still hinder the shift towards centralized optical amplification. Traveling wave photodetectors (TWPDs) have been devised to allow for high-linearity, high-speed opto-electronic conversion. In this paper, an architecture is discussed consisting of such a TWPD implemented on the iSiPP25G silicon photonics platform. A monolithically integrated star coupler is added in the design to provide compact power distribution while preserving the high linearity of the TWPD. The traveling wave structure (using 16 photodetectors) has a measured 3 dB bandwidth of 27.5 GHz and a fairly flat S21 up to 50 GHz (less than 1 dB extra loss). Furthermore, the output referred third-order intercept point at 28 GHz, is improved from -1.79 dBm for a single Ge photodiode to 20.98 dBm by adopting the traveling wave design.

Integration of high-speed GaAs metal-semiconductor-metal photodetectors by means of transfer printing for 850 nm wavelength photonic interposers.

We propose and demonstrate the integration of 850 nm GaAs-based metal-semiconductor-metal (MSM) photodetectors (PDs) based on transfer printing for application in photonic interposers. Both devices that directly interface with a multimode optical fiber (with device dimensions of 70 µm × 70 µm) as well as devices that interface with a SiN waveguide layer through a grating coupler (with device dimensions of 30 µm × 30 µm) are demonstrated. The dark currents are measured to be 22 nA and 7.2 nA at 2 V bias for the larger and smaller PDs respectively. For 850 nm wavelength, the external responsivities are measured to be 0.117 A/W and 0.1 A/W at 2 V bias. 20 GHz bandwidth is measured. Open 40 Gb/s eye diagrams are realized.

High-alignment-accuracy transfer printing of passive silicon waveguide structures.

We demonstrate the transfer printing of passive silicon devices on a silicon-on-insulator target waveguide wafer. Adiabatic taper structures and directional coupler structures were designed for 1310 nm and 1600 nm wavelength coupling tolerant for ± 1 µm misalignment. The release of silicon devices from the silicon substrate was realized by underetching the buried oxide layer while protecting the back-end stack. Devices were successfully picked by a PDMS stamp, by breaking the tethers that kept the silicon coupons in place on the source substrate, and printed with high alignment accuracy on a silicon photonic target wafer. Coupling losses of -1.5 +/- 0.5 dB for the adiabatic taper at 1310 nm wavelength and -0.5 +/- 0.5 dB for the directional coupler at 1600 nm wavelength are obtained.

Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser.

An electrically pumped DFB laser integrated on and coupled to a silicon waveguide circuit is demonstrated by transfer printing a 40 × 970 µm2 III-V coupon, defined on a III-V epitaxial wafer. A second-order grating defined in the silicon device layer with a period of 477 nm and a duty cycle of 75% was used for realizing single mode emission, while an adiabatic taper structure is used for coupling to the silicon waveguide layer. 18 mA threshold current and a maximum single-sided waveguide-coupled output power above 2 mW is obtained at 20°C. Single mode operation around 1550 nm with > 40 dB side mode suppression ratio (SMSR) is realized. This new integration approach allows for the very efficient use of the III-V material and the massively parallel integration of these coupons on a silicon photonic integrated circuit wafer. It also allows for the intimate integration of III-V opto-electronic components based on different epitaxial layer structures.

1.3 µm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding.

In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 µm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated. High temperature operation with continuous wave lasing up to 100°C is obtained. Threshold current densities as low as 205 A/cm2 were measured. These devices are attractive candidates to use in uncooled silicon photonic transceivers in data centers.

Integration of etched facet, electrically pumped, C-band Fabry-Pérot lasers on a silicon photonic integrated circuit by transfer printing.

We report on the heterogeneous integration of electrically pumped InP Fabry-Pérot lasers on a SOI photonic integrated circuit by transfer printing. Transfer printing is a promising micromanipulation technique that allows the heterogeneous integration of optical and electronic components realized on their native substrate onto a target substrate with efficient use of the source material, in a way that can be scaled to parallel manipulation and that allows mixing components from different sources onto the same target. We pre-process transfer printable etched facet Fabry-Pérot lasers on their native InP substrate, transfer print them into a trench defined in an SOI photonic chip and post-process the printed lasers on the target substrate. The laser facet is successfully butt-coupled to the photonic circuit using a silicon inverse taper based spot size converter. Milliwatt optical output power coupled to the Si waveguide circuit at 100 mA is demonstrated.

Efficient 5.2 µm wavelength fiber-to-chip grating couplers for the Ge-on-Si and Ge-on-SOI mid-infrared waveguide platform.

We present the design, fabrication and characterization of efficient fiber-to-chip grating couplers on a Germanium-on-Silicon (Ge-on-Si) and Germanium-on-silicon-on-insulator (Ge-on-SOI) platform in the 5 µm wavelength range. The best grating couplers on Ge-on-Si and Ge-on-SOI have simulated coupling efficiencies of -4 dB (40%) with a 3 dB bandwidth of 180 nm and -1.5 dB (70%) with a 3 dB bandwidth of 200 nm, respectively. Experimentally, we show a maximum efficiency of -5 dB (32%) and a 3 dB bandwidth of 100 nm for Ge-on-Si grating couplers, and a -4 dB (40%) efficiency with a 3 dB bandwidth of 180 nm for Ge-on-SOI couplers.