Ultra-compact diode-pumped single-frequency Ti:sapphire laser.

In this Letter, we report on the development of an ultra-compact single-frequency Ti:sapphire laser under direct diode pumping. Single-longitudinal-mode operation is realized from a miniature plane-parallel resonator using a volume Bragg grating as an output coupler. InGaN laser diodes operating at around 470 nm and 490 nm with a combined power of 6.7 W are used as an optical pump. A maximum output power of 700 mW is generated during single-frequency operation at 813.4 nm. A laser linewidth of 2.4 MHz is measured during free-running operation, which is reduced to about 180 kHz when the laser is locked to an external reference cavity.

Intracavity Raman conversion of a red semiconductor disk laser using diamond.

We demonstrate a diamond Raman laser intracavity-pumped by a red semiconductor disk laser (~675 nm) for laser emission at around 740 nm. Output power up to 82 mW of the Stokes-shifted field was achieved, limited by the available pump power, with an output coupling of 1.5%. We also report wavelength tuning of the diamond Raman laser over 736 - 750 nm.

Frequency stabilization of an ultraviolet semiconductor disk laser.

We report a tunable, narrow-linewidth UV laser based on intracavity second-harmonic generation in a red semiconductor disk laser. Single-frequency operation is demonstrated with a total UV output power of 26 mW. By servo-locking the fundamental frequency to a reference Fabry-Pérot cavity, the linewidth of the UV beam has been reduced to 16 kHz on short timescales and 50 kHz on a 1 s timescale, relative to the reference.

InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm.

Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (Al(x)Ga(1-x))(0.51)In(0.49)P based semiconductor disk laser with monolithic Al(x)Ga(1-x)As distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532 nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52 mW at 739 nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser.

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a single-pass of the solid-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible spectrum, by appropriate choice of semiconductor material and single-pass laser wavelength.