RESUMO
An optical system for multichannel coupling of laser arrays to polymer waveguide array probes with a single biconvex lens is developed. The developed cylindrical module with 13 mm and 20 mm in diameter and length, respectively, enables coupling of eight individual optical channels using an aspheric lens. Specific coupling with crosstalk below -13d B for each channel and quasi-uniform coupling over all channels is achieved for a waveguide array with 100 µm lateral facet pitch at the incoupling site. The polymer waveguide technology allows for tapering of the lateral waveguide pitch to 25 µm toward the tip of the flexible waveguide array. SU-8 and PMMA are used as the waveguide core and cladding, respectively. The optical coupling module is designed as a prototype for preclinical evaluation of optical neural stimulators.
RESUMO
The photoluminescence intensity of group III nitrides, nanowires, and heterostructures (NWHs) strongly depends on the environmental H(2) and O(2) concentration. We used this opto-chemical transducer principle for the realization of a gas detector. To make this technology prospectively available to commercial gas-monitoring applications, a large-scale laboratory setup was miniaturized. To this end the gas-sensitive NWHs were integrated with electro-optical components for optical addressing and read out within a compact and robust sensor system. This paper covers the entire realization process of the device from its conceptual draft and optical design to its fabrication and assembly. The applied approaches are verified with intermediate results of profilometric characterizations and optical performance measurements of subsystems. Finally the gas-sensing capabilities of the integrated detector are experimentally proven and optimized.
RESUMO
The structural properties and the strain state of InGaN/GaN superlattices embedded in GaN nanowires were analyzed as a function of superlattice growth temperature, using complementary transmission electron microscopy techniques supplemented by optical analysis using photoluminescence and spatially resolved microphotoluminescence spectroscopy. A truncated pyramidal shape was observed for the 4 nm thick InGaN inclusions, where their (0001¯) central facet was delimited by six-fold {101¯l} facets towards the m-plane sidewalls of the nanowires. The defect content of the nanowires comprised multiple basal stacking faults localized at the GaN base/superlattice interface, causing the formation of zinc-blende cubic regions, and often single stacking faults at the GaN/InGaN bilayer interfaces. No misfit dislocations or cracks were detected in the heterostructure, implying a fully strained configuration. Geometrical phase analysis showed a rather uniform radial distribution of elastic strain in the (0001¯) facet of the InGaN inclusions. Depending on the superlattice growth temperature, the elastic strain energy is partitioned among the successive InGaN/GaN layers in the case of low-temperature growth, while at higher superlattice growth temperature the in-plane tensile misfit strain of the GaN barriers is accommodated through restrained diffusion of indium from the preceding InGaN layers. The corresponding In contents of the central facet were estimated at 0.42 and 0.25, respectively. However, in the latter case, successful reproduction of the experimental electron microscopy images by image simulations was only feasible, allowing for a much higher occupancy of indium adatoms at lattice sites of the semipolar facets, compared to the invariable 25% assigned to the polar facet. Thus, a high complexity in indium incorporation and strain allocation between the different crystallographic facets of the InGaN inclusions is anticipated and supported by the results of photoluminescence and spatially resolved microphotoluminescence spectroscopy.