Spectroscopic Determination of Ice-Induced Interfacial Strain on Single-Layer Graphene.

Reliably determining the physical properties of ice (e.g., crystal structure, adhesion strength, interfacial state, and molecular orientation) has proven to be both challenging and highly dependent on experiment-specific conditions, including surface roughness, ice formation, water purity, and measurement method. Here, non-destructive measurements of single-layer graphene (SLG) interfaced with bulk ice are used to determine temperature-dependent, ice-induced strain and estimate ice-created strain elastic density in SLG. The use of SLG enables the precise study of interfacial strain by monitoring the 2D Raman mode. Upon ice formation, a clear, ≈2 cm-1 decrease in the 2D mode frequency is observed, which is ascribed to a 0.012% biaxial tensile shear strain at the ice-SLG interface. From this shear strain value, the ice-created SLG elastic strain energy density is estimated to be 2.4 µJ m-2 . In addition to these Raman strain measurements, intentionally ionized water is used to show that water-mediated charging of the SLG surface manifests itself in a distinctly different manner than ice-induced strain. Finally, the localized nature of the Raman probe is used to map SLG regions with and without ice, suggesting that this method cannot only determine ice-induced interfacial strain, but also correlate ice adhesion properties with surface roughness and topology.

Distinguishing Elements at the Sub-Nanometer Scale on the Surface of a High Entropy Alloy.

Materials in crystalline form possess translational symmetry (TS) when the unit cell is repeated in real space with long- and short-range orders. The periodic potential in the crystal regulates the electron wave function and results in unique band structures, which further define the physical properties of the materials. Amorphous materials lack TS due to the randomization of distances and arrangements between atoms, causing the electron wave function to lack a well-defined momentum. High entropy materials provide another way to break the TS by randomizing the potential strength at periodic atomic sites. The local elemental distribution has a great impact on physical properties in high entropy materials. It is critical to distinguish elements at the sub-nanometer scale to uncover the correlations between the elemental distribution and the material properties. Here, the use of synchrotron X-ray scanning tunneling microscopy (SX-STM) with sub-nm scale resolution in identifying elements on a high entropy alloy (HEA) surface is demonstrated. By examining the elementally sensitive X-ray absorption spectra with an STM tip to enhance the spatial resolution, the elemental distribution on an HEA's surface at a sub-nm scale is extracted. These results open a pathway towards quantitatively understanding high entropy materials and their material properties.

Direct Observations of Uniform Bulk Heterojunctions and the Energy Level Alignments in Nonfullerene Organic Photovoltaic Active Layers.

State-of-the-art organic photovoltaic (OPV) cells rely on the engineering of the energy levels of the organic molecules as well as the bulk-heterojunction nanomorphology to achieve high performance. However, both are difficult to measure inside the active layer where the electron donor and acceptor molecules are mingled. While the energy level alignments of the lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) between the electron donors and acceptors may be altered in the mixed active layer compared to their pure forms, the nanomorphology of the donor and acceptor molecular domains is mostly studied in indirect means. Here, we present the direct observations of the nanomorphology of the molecular domains as well as the energy level alignments in the active layer of a nonfullerene-based OPV (donor: PBDB-T-2F and acceptor: IT-4Cl) using cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/S). It is revealed that (1) the bulk-heterojunction (BHJ) structures are homogeneous and uniform throughout the ∼1.2 µm thick active layer; (2) the energy alignments between the donor-rich and acceptor-rich domains are directly observed; (3) there exist the intermixing domains at the boundaries of the donor-rich and acceptor-rich domains with thickness in the nm scale; (4) the exciton binding energies in PBDB-T-2F and IT-4Cl are estimated to be 0.74 and 0.32 eV, respectively; and (5) there is an ∼0.7 V loss in the open circuit voltage. The results provide a nanoscale understanding of the OPV active layers to guide further improvement of the OPV performance.