From a Cerium-Doped Polynuclear Bismuth Oxido Cluster to ß-Bi2O3:Ce.

The simultaneous hydrolysis of Bi(NO3)3·5H2O and Ce(NO3)3·6H2O results in the formation of novel heterometallic bismuth oxido clusters with the general formula [Bi38O45(NO3)24(DMSO)28+δ]:Ce (DMSO = dimethyl sulfoxide; cerium content <1.50%), which is demonstrated by single-crystal X-ray diffraction analysis. The incorporation of cerium into the cluster core is a result of the interplay of hydrolysis and condensation of the metal nitrates in the presence of oxygen. Diffuse-reflectance UV-vis and X-ray photoelectron spectroscopy reveal the presence of CeIV in the final bismuth oxido clusters as a result of oxidation of the cerium source. The cerium atoms are statistically distributed mainly on the bismuth atom positions of the central [Bi6O9] motif of the [Bi38O45] cluster core. Hydrolysis and subsequent annealing of the bismuth oxido clusters in the temperature range of 300-400 °C provides ß-Bi2O3:Ce samples with slightly lowered band gaps of approximately 2.3 eV compared to the undoped ß-Bi2O3 (approximately 2.4 eV). The sintering behavior of ß-Bi2O3 is significantly affected by the cerium dopant. Finally, differences in the efficiency of the as-prepared ß-Bi2O3:Ce and undoped ß-Bi2O3 samples in the photocatalytic decomposition of the biocide triclosan in an aqueous solution under visible-light irradiation are demonstrated.

Tunable carrier multiplication and cooling in graphene.

Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly (n-)doped graphene, we observe larger carrier multiplication factors (>3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less (p-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.

Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene.

Charge carriers in bilayer graphene are widely believed to be massive Dirac fermions that have a bandgap tunable by a transverse electric field. However, a full transport gap, despite its importance for device applications, has not been clearly observed in gated bilayer graphene, a long-standing puzzle. Moreover, the low-energy electronic structure of bilayer graphene is widely held to be unstable towards symmetry breaking either by structural distortions, such as twist, strain, or electronic interactions that can lead to various ground states. Which effect dominates the physics at low energies is hotly debated. Here we show both by direct band-structure measurements and by calculations that a native imperfection of bilayer graphene, a distribution of twists whose size is as small as ~0.1°, is sufficient to generate a completely new electronic spectrum consisting of massive and massless Dirac fermions. The massless spectrum is robust against strong electric fields, and has a unusual topology in momentum space consisting of closed arcs having an exotic chiral pseudospin texture, which can be tuned by varying the charge density. The discovery of this unusual Dirac spectrum not only complements the framework of massive Dirac fermions, widely relevant to charge transport in bilayer graphene, but also supports the possibility of valley Hall transport.

Ultrafast dynamics of massive dirac fermions in bilayer graphene.

Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tunable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by topological in-gap states, or that the electronic structure could be altogether changed by many-body effects. Here, we directly follow the excited carriers in bilayer graphene on a femtosecond time scale, using ultrafast time- and angle-resolved photoemission. We find a behavior consistent with a single-particle band gap. Compared to monolayer graphene, the existence of this band gap leads to an increased carrier lifetime in the minimum of the lowest conduction band. This is in sharp contrast to the second substate of the conduction band, in which the excited electrons decay through fast, phonon-assisted interband transitions.

Strong plasmon reflection at nanometer-size gaps in monolayer graphene on SiC.

We employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. The near-field images reveal propagating graphene plasmons, as well as a strong plasmon reflection at gaps in the graphene layer, which appear at the steps between the SiC terraces. When the step height is around 1.5 nm, which is two orders of magnitude smaller than the plasmon wavelength, the reflection signal reaches 20% of its value at graphene edges, and it approaches 50% for step heights as small as 5 nm. This intriguing observation is corroborated by numerical simulations and explained by the accumulation of a line charge at the graphene termination. The associated electromagnetic fields at the graphene termination decay within a few nanometers, thus preventing efficient plasmon transmission across nanoscale gaps. Our work suggests that plasmon propagation in graphene-based circuits can be tailored using extremely compact nanostructures, such as ultranarrow gaps. It also demonstrates that tip-enhanced near-field microscopy is a powerful contactless tool to examine nanoscale defects in graphene.

Fabry-Perot enhanced Faraday rotation in graphene.

We demonstrate that giant Faraday rotation in graphene in the terahertz range due to the cyclotron resonance is further increased by constructive Fabry-Perot interference in the supporting substrate. Simultaneously, an enhanced total transmission is achieved, making this effect doubly advantageous for graphene-based magneto-optical applications. As an example, we present far-infrared spectra of epitaxial multilayer graphene grown on the C-face of 6H-SiC, where the interference fringes are spectrally resolved and a Faraday rotation up to 0.15 radians (9°) is attained. Further, we discuss and compare other ways to increase the Faraday rotation using the principle of an optical cavity.

Visualizing atomic-scale negative differential resistance in bilayer graphene.

We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices.

Direct view of hot carrier dynamics in graphene.

The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. Until now, the hot carrier dynamics in graphene could only be accessed indirectly. Here, we present a dynamical view on the Dirac cone by time- and angle-resolved photoemission spectroscopy. This allows us to show the quasi-instant thermalization of the electron gas to a temperature of ≈2000 K, to determine the time-resolved carrier density, and to disentangle the subsequent decay into excitations of optical phonons and acoustic phonons (directly and via supercollisions).

Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001).

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τ(S) in monolayer graphene, while the spin diffusion coefficient D(S) is strongly reduced compared to typical results on exfoliated graphene. The increase of τ(S) is probably related to the changed substrate, while the cause for the small value of D(S) remains an open question.

On the way to graphane-pronounced fluorescence of polyhydrogenated graphene.

Chemistry meets graphane: a Birch-type reaction using frozen water as a gentle proton source causes the exfoliation of graphite and formation of hydrogenated graphene with electronically decoupled π-nanodomains. This highly functionalized graphene displays pronounced fluorescence.

Fabrication of Single-Crystalline CoCrFeNi Thin Films by DC Magnetron Sputtering: A Route to Surface Studies of High-Entropy Alloys.

High-entropy alloys (HEAs) with their almost limitless number of possible compositions have raised widespread attention in material science. Next to wear and corrosion resistive coatings, their application as tunable electrocatalysts has recently moved into the focus. On the other hand, fundamental properties of HEA surfaces like atomic and electronic structure, surface segregation and diffusion as well as adsorption on HEA surfaces are barely explored. The lack of research is caused by the limited availability of single-crystalline samples. In the present work, the epitaxial growth of face centered cubic (fcc) CoCrFeNi films on MgO(100) is reported. Their characterization by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), and transmission electron microscopy (TEM) demonstrates that the layers with a homogeneous and close to equimolar elemental composition are oriented in [100] direction and aligned with the substrate to which they form an abrupt interface. X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), and angle-resolved photoelectron spectroscopy are employed to study chemical composition and atomic and electronic structure of CoCrFeNi(100). It is demonstrated that epitaxially grown HEA films have the potential to fill the sample gap, allowing for fundamental studies of properties of and processes on well-defined HEA surfaces over the full compositional space.

Bottom-gated epitaxial graphene.

High-quality epitaxial graphene on silicon carbide (SiC) is today available in wafer size. Similar to exfoliated graphene, its charge carriers are governed by the Dirac-Weyl Hamiltonian and it shows excellent mobilities. For many experiments with graphene, in particular for surface science, a bottom gate is desirable. Commonly, exfoliated graphene flakes are placed on an oxidized silicon wafer that readily provides a bottom gate. However, this cannot be applied to epitaxial graphene as the SiC provides the source material out of which graphene grows. Here, we present a reliable scheme for the fabrication of bottom-gated epitaxial graphene devices, which is based on nitrogen (N) implantation into a SiC wafer and subsequent graphene growth. We demonstrate working devices in a broad temperature range from 6 to 300 K. Two gating regimes can be addressed, which opens a wide engineering space for tailored devices by controlling the doping of the gate structure.

Influence of structural properties on ballistic transport in nanoscale epitaxial graphene cross junctions.

In this paper we investigate the influence of material and device properties on the ballistic transport in epitaxial monolayer graphene and epitaxial quasi-free-standing monolayer graphene. Our studies comprise (a) magneto-transport in two-dimensional (2D) Hall bars, (b) temperature- and magnetic-field-dependent bend resistance of unaligned and step-edge-aligned orthogonal cross junctions, and (c) the influence of the lead width of the cross junctions on ballistic transport. We found that ballistic transport is highly sensitive to scattering at the step edges of the silicon carbide substrate. A suppression of the ballistic transport is observed if the lead width of the cross junction is reduced from 50 nm to 30 nm. In a 50 nm wide device prepared on quasi-free-standing graphene we observe a gradual transition from the ballistic into the diffusive transport regime if the temperature is increased from 4.2 to about 50 K, although 2D Hall bars show a temperature-independent mobility. Thus, in 1D devices additional temperature-dependent scattering mechanisms play a pivotal role.

Modulation doping and charge density wave transition in layered PbSe-VSe2 ferecrystal heterostructures.

Controlling charge carrier concentrations remains a major challenge in the application of quasi-two-dimensional materials. A promising approach is the modulation doping of transport channels via charge transfer from neighboring layers in stacked heterostructures. Ferecrystals, which are metastable layered structures created from artificial elemental precursors, are a perfect model system to investigate modulation doping, as they offer unparalleled freedom in the combination of different constituents and variable layering sequences. In this work, differently stacked combinations of rock-salt structured PbSe and VSe2 were investigated using X-ray photoelectron spectroscopy. The PbSe layers act as electron donors in all heterostructures, with about 0.1 to 0.3 donated electrons per VSe2 unit cell. While they initially retain their inherent semiconducting behavior, they themselves become metallic when combined with a larger number of VSe2 layers, as evidenced by a change of the XPS core level lineshape. Additional analysis of the valence band structure was performed for selected stacking orders at different sample temperatures to investigate a predicted charge density wave (CDW) transition. While there appear to be hints of a gap opening, the data so far is inconclusive and the application of spatially resolved techniques such as scanning tunneling microscopy is encouraged for further studies.

A momentum space view of the surface chemical bond.

Well-ordered and oriented monolayers of conjugated organic molecules can offer new perspectives on surface bonding. We will demonstrate the importance of the momentum distribution, or symmetry, of the adsorbate molecules' π orbitals in relation to the states available for hybridization at the metal surface. Here, the electronic band structure of the first monolayer of sexiphenyl on Cu(110) has been examined in detail with angle-resolved ultraviolet photoemission spectroscopy over a large momentum range and will be compared to measurements of a multilayer thin film and to density functional calculations. In the monolayer, the one-dimensional intramolecular band structure can still be recognized, allowing an accurate determination of orbital modification upon bonding and the relative energetic positions of the electronic levels. It is seen that the character of the molecular π orbitals is largely maintained despite strong mixing between Cu and molecular states and that the lowest unoccupied molecular orbital (LUMO) is filled by hybridization with Cu s,p states rather than through a charge transfer process. It is also shown that the momentum distribution of the substrate states involved and the periodicity of the molecular overlayer play a large role in the final E(k) distribution of the hybrid states. The distinct momentum distribution of the LUMO, interacting with the Cu substrate s,p valence bands around the gap in the surface projection of the bulk band structure, make this system a particularly illustrative example of momentum resolved hybridization. This system demonstrates that, for hybridization to occur, not only do states require overlap in energy and space, but also in momentum.

Surface Transport Properties of Pb-Intercalated Graphene.

Intercalation experiments on epitaxial graphene are attracting a lot of attention at present as a tool to further boost the electronic properties of 2D graphene. In this work, we studied the intercalation of Pb using buffer layers on 6H-SiC(0001) by means of electron diffraction, scanning tunneling microscopy, photoelectron spectroscopy and in situ surface transport. Large-area intercalation of a few Pb monolayers succeeded via surface defects. The intercalated Pb forms a characteristic striped phase and leads to formation of almost charge neutral graphene in proximity to a Pb layer. The Pb intercalated layer consists of 2 ML and shows a strong structural corrugation. The epitaxial heterostructure provides an extremely high conductivity of σ=100 mS/□. However, at low temperatures (70 K), we found a metal-insulator transition that we assign to the formation of minigaps in epitaxial graphene, possibly induced by a static distortion of graphene following the corrugation of the interface layer.

Challenging the Durability of Intermetallic Mo-Ni Compounds in the Hydrogen Evolution Reaction.

Molybdenum-nickel materials are catalysts of industrial interest for the hydrogen evolution reaction (HER). Well-characterized surfaces of the single-phase intermetallic compounds Ni7Mo7, Ni3Mo, and Ni4Mo were subjected to accelerated durability tests (ADTs) and thorough characterization to unravel whether crystallographic ordering affects the activity. Their intrinsic instability leads to molybdenum leaching, resulting in higher specific surface areas and nickel-enriched surfaces. These are more prone to form Ni(OH)2 layers, which leads to deactivation of the Mo-Ni materials. The crystal structure of the intermetallic compounds has, due to the intrinsic instability of the materials in alkaline media, no effect on the activity. Ni7Mo7, identified earlier as durable, proves to be highly unstable in the applied ADTs. The results show that the enhanced activity of unsupported bulk Mo-Ni electrodes can solely be ascribed to increased specific surface areas.

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide.

Graphene, a single monolayer of graphite, has recently attracted considerable interest owing to its novel magneto-transport properties, high carrier mobility and ballistic transport up to room temperature. It has the potential for technological applications as a successor of silicon in the post Moore's law era, as a single-molecule gas sensor, in spintronics, in quantum computing or as a terahertz oscillator. For such applications, uniform ordered growth of graphene on an insulating substrate is necessary. The growth of graphene on insulating silicon carbide (SiC) surfaces by high-temperature annealing in vacuum was previously proposed to open a route for large-scale production of graphene-based devices. However, vacuum decomposition of SiC yields graphene layers with small grains (30-200 nm; refs 14-16). Here, we show that the ex situ graphitization of Si-terminated SiC(0001) in an argon atmosphere of about 1 bar produces monolayer graphene films with much larger domain sizes than previously attainable. Raman spectroscopy and Hall measurements confirm the improved quality of the films thus obtained. High electronic mobilities were found, which reach mu=2,000 cm (2) V(-1) s(-1) at T=27 K. The new growth process introduced here establishes a method for the synthesis of graphene films on a technologically viable basis.

Extended van Hove singularity and superconducting instability in doped graphene.

We have investigated the effects of doping on a single layer of graphene using angle-resolved photoemission spectroscopy. We show that many-body interactions severely warp the Fermi surface, leading to an extended van Hove singularity (EVHS) at the graphene M point. The ground state properties of graphene with such an EVHS are calculated, analyzing the competition between a magnetic instability and the tendency towards superconductivity. We find that the latter plays the dominant role as it is enhanced by the strong modulation of the interaction along the Fermi line, leading to an energy scale for the onset of the pairing instability as large as 1 meV when the Fermi energy is sufficiently close to the EVHS.

Substrate induced nanoscale resistance variation in epitaxial graphene.

Graphene, the first true two-dimensional material, still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances is still an open issue. Here, we quantitatively investigate local transport properties of graphene prepared by polymer assisted sublimation growth using scanning tunneling potentiometry. These samples exhibit a spatially homogeneous current density, which allows to analyze variations in the local electrochemical potential with high precision. We utilize this possibility by examining the local sheet resistance finding a significant variation of up to 270% at low temperatures. We identify a correlation of the sheet resistance with the stacking sequence of the 6H silicon carbide substrate and with the distance between the graphene and the substrate. Our results experimentally quantify the impact of the graphene-substrate interaction on the local transport properties of graphene.