Precision Measurement of the n=2 Triplet P J=1 to J=0 Fine Structure of Atomic Helium Using Frequency-Offset Separated Oscillatory Fields.

Increasing accuracy of the theory and experiment of the n=2 ^{3}P fine structure of helium has allowed for increasingly precise tests of quantum electrodynamics (QED), determinations of the fine-structure constant α, and limitations on possible beyond the standard model physics. Here we present a 2 ppb measurement of the J=1 to J=0 interval. The measurement is performed using frequency-offset separated-oscillatory fields. Our result of 29 616 955 018(60) Hz represents a landmark for helium fine-structure measurements, and, for the first time, will allow for a 1-ppb determination of the fine-structure constant when QED theory for the interval is improved.

Ultrahigh-Precision Measurement of the n=2 Triplet P Fine Structure of Atomic Helium Using Frequency-Offset Separated Oscillatory Fields.

For decades, improved theory and experiment of the n=2 ^{3}P fine structure of helium have allowed for increasingly precise tests of quantum electrodynamics, determinations of the fine-structure constant α, and limitations on possible beyond-the-standard-model physics. Here we use the new frequency-offset separated-oscillatory-fields technique to measure the 2^{3}P_{2}→2^{3}P_{1} interval. Our result of 2 291 176 590(25) Hz represents a major step forward in precision for helium fine-structure measurements.

Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer.

Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically controlled magnetic memory devices. The focus of our work is to experimentally disentangle the perceived two model physical mechanisms of the relativistic spin torques, one driven by the spin-Hall effect and the other one by the inverse spin-galvanic effect. Here, we show a vector analysis of the torques in a prepared epitaxial transition-metal ferromagnet/semiconductor-paramagnet single-crystal structure by means of the all-electrical ferromagnetic resonance technique. By choice of our structure in which the semiconductor paramagnet has a Dresselhaus crystal inversion asymmetry, the system is favourable for separating the torques due to the inverse spin-galvanic effect and spin-Hall effect mechanisms into the field-like and antidamping-like components, respectively. Since they contribute to distinct symmetry torque components, the two microscopic mechanisms do not compete but complement each other in our system.

An antidamping spin-orbit torque originating from the Berry curvature.

Magnetization switching at the interface between ferromagnetic and paramagnetic metals, controlled by current-induced torques, could be exploited in magnetic memory technologies. Compelling questions arise regarding the role played in the switching by the spin Hall effect in the paramagnet and by the spin-orbit torque originating from the broken inversion symmetry at the interface. Of particular importance are the antidamping components of these current-induced torques acting against the equilibrium-restoring Gilbert damping of the magnetization dynamics. Here, we report the observation of an antidamping spin-orbit torque that stems from the Berry curvature, in analogy to the origin of the intrinsic spin Hall effect. We chose the ferromagnetic semiconductor (Ga,Mn)As as a material system because its crystal inversion asymmetry allows us to measure bare ferromagnetic films, rather than ferromagnetic-paramagnetic heterostructures, eliminating by design any spin Hall effect contribution. We provide an intuitive picture of the Berry curvature origin of this antidamping spin-orbit torque as well as its microscopic modelling. We expect the Berry curvature spin-orbit torque to be of comparable strength to the spin-Hall-effect-driven antidamping torque in ferromagnets interfaced with paramagnets with strong intrinsic spin Hall effect.