Detalhe da pesquisa
1.
High-Q adiabatic micro-resonators on a wafer-scale ion-sliced 4H-silicon carbide-on-insulator platform.
Opt Lett
; 48(23): 6279-6282, 2023 Dec 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-38039246
2.
Simultaneously achieving high performance of thermal stability and power consumption via doping yttrium in Sn15Sb85thin film.
Nanotechnology
; 34(26)2023 Apr 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-36975182
3.
Visible and near-infrared microdisk resonators on a 4H-silicon-carbide-on-insulator platform.
Opt Lett
; 46(12): 2952-2955, 2021 Jun 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-34129582
4.
Non-volatile multi-level cell storage via sequential phase transition in Sb7Te3/GeSb6Te multilayer thin film.
Nanotechnology
; 33(7)2021 Nov 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-34731838
5.
Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes.
Nanotechnology
; 31(20): 205203, 2020 May 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-32018237
6.
Excellent thermal stability owing to Ge and C doping in Sb2Te-based high-speed phase-change memory.
Nanotechnology
; 29(50): 505710, 2018 Dec 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-30264733
7.
Covalent Functionalization of Black Phosphorus with Conjugated Polymer for Information Storage.
Angew Chem Int Ed Engl
; 57(17): 4543-4548, 2018 04 16.
Artigo
em Inglês
| MEDLINE | ID: mdl-29469226
8.
Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.
Nanotechnology
; 28(40): 405206, 2017 Oct 06.
Artigo
em Inglês
| MEDLINE | ID: mdl-28895557
9.
In Situ Synthesis and Characterization of Poly(aryleneethynylene)-Grafted Reduced Graphene Oxide.
Chemistry
; 22(7): 2247-52, 2016 Feb 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-26690651
10.
Improvement of Multilevel Memory Performance of MnTe Thin Films by Ta Doping.
ACS Appl Mater Interfaces
; 16(14): 17778-17786, 2024 Apr 10.
Artigo
em Inglês
| MEDLINE | ID: mdl-38534114
11.
A Complicated Route from Disorder to Order in Antimony-Tellurium Binary Phase Change Materials.
Adv Sci (Weinh)
; 11(9): e2301021, 2024 Mar.
Artigo
em Inglês
| MEDLINE | ID: mdl-38133500
12.
Study on the crystallization process of GaSb-Sb2Te3 pseudobinary films for phase-change random access memory.
J Nanosci Nanotechnol
; 13(2): 976-9, 2013 Feb.
Artigo
em Inglês
| MEDLINE | ID: mdl-23646553
13.
Reactive ion etching of Si(x)Sb2Te in CF4/Ar plasma for nonvolatile phase-change memory device.
J Nanosci Nanotechnol
; 13(2): 1594-7, 2013 Feb.
Artigo
em Inglês
| MEDLINE | ID: mdl-23646688
14.
Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications.
Nanomaterials (Basel)
; 13(4)2023 Feb 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-36839001
15.
A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature Compensation.
Micromachines (Basel)
; 14(7)2023 Jul 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-37512731
16.
Neuromorphic Photonic Memory Devices Using Ultrafast, Non-Volatile Phase-Change Materials.
Adv Mater
; 35(37): e2203909, 2023 Sep.
Artigo
em Inglês
| MEDLINE | ID: mdl-35713563
17.
The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb2Te3.
Nanomaterials (Basel)
; 13(4)2023 Feb 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-36839039
18.
Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application.
Nanomaterials (Basel)
; 13(6)2023 Mar 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-36985944
19.
Pt Modified Sb2Te3 Alloy Ensuring High-Performance Phase Change Memory.
Nanomaterials (Basel)
; 12(12)2022 Jun 10.
Artigo
em Inglês
| MEDLINE | ID: mdl-35745335
20.
An Output-Capacitorless Low-Dropout Regulator with Slew-Rate Enhancement.
Micromachines (Basel)
; 13(10)2022 Sep 25.
Artigo
em Inglês
| MEDLINE | ID: mdl-36295947