Dissipative Kerr soliton generation at 2µm in a silicon nitride microresonator.

Chip-scale optical frequency combs enable the generation of highly-coherent pulsed light at gigahertz-level repetition rates, with potential technological impact ranging from telecommunications to sensing and spectroscopy. In combination with techniques such as dual-comb spectroscopy, their utilization would be particularly beneficial for sensing of molecular species in the mid-infrared spectrum, in an integrated fashion. However, few demonstrations of direct microcomb generation within this spectral region have been showcased so far. In this work, we report the generation of Kerr soliton microcombs in silicon nitride integrated photonics. Leveraging a high-Q silicon nitride microresonator, our device achieves soliton generation under milliwatt-level pumping at 1.97 µm, with a generated spectrum encompassing a 422 nm bandwidth and extending up to 2.25 µm. The use of a dual pumping scheme allows reliable access to several comb states, including primary combs, modulation instability combs, as well as multi- and single-soliton states, the latter exhibiting high stability and low phase noise. Our work extends the domain of silicon nitride based Kerr microcombs towards the mid-infrared using accessible factory-grade technology and lays the foundations for the realization of fully integrated mid-infrared comb sources.

Tunable photo-induced second-harmonic generation in a mode-engineered silicon nitride microresonator.

All-optical poling enables reconfigurable and efficient quasi-phase-matching for second-order parametric frequency conversion in silicon nitride integrated photonics. Here, we report broadly tunable milliwatt-level second-harmonic generation in a small free spectral range silicon nitride microresonator, where the pump and its second-harmonic are both always on the fundamental mode. By carefully engineering the light coupling region between the bus and microresonator, we simultaneously achieve critical coupling of the pump as well as efficient extraction of second-harmonic light from the cavity. Thermal tuning of second-harmonic generation is demonstrated with an integrated heater in a frequency grid of 47 GHz over a 10 nm band.

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth.

We have designed and fabricated a hybrid integrated laser source with full C-band wavelength tunability and high-power output. The external cavity laser is composed of a gain chip and a dual micro-ring narrowband filter integrated on the silicon nitride photonic chip to achieve a wavelength tuning range of 55 nm and a SMSR higher than 50 dB. Through the integration of the semiconductor optical amplifier in the miniaturized package, the laser exhibits an output power of 220 mW and linewidth narrower than 8 kHz over the full C-band. Such a high-power, narrow-linewidth laser diode with a compact and low-cost design could be applied whenever coherence and interferometric resolutions are needed, such as silicon optical coherent transceiver module for space laser communication, light detection and ranging (LiDAR).

Near perfect two-photon interference out of a down-converter on a silicon photonic chip.

Integrated entangled photon-pair sources are key elements for enabling large-scale quantum photonic solutions and address the challenges of both scaling-up and stability. Here we report the first demonstration of an energy-time entangled photon-pair source based on spontaneous parametric down-conversion in silicon-based platform-stoichiometric silicon nitride (Si3N4)-through an optically induced second-order (χ(2)) nonlinearity, ensuring type-0 quasi-phase-matching of fundamental harmonic and its second-harmonic inside the waveguide. The developed source shows a coincidence-to-accidental ratio of 1635 for 8 µW pump power. We report two-photon interference with remarkable near-perfect visibility of 99.36±1.94%, showing high-quality photonic entanglement without excess background noise. This opens a new horizon for quantum technologies requiring the integration of a large variety of building functionalities on a single chip.

Highly tunable second-harmonic generation in all-optically poled silicon nitride waveguides.

The availability of nonlinear parametric processes, such as frequency conversion in photonic integrated circuits is essential. In this contribution, we demonstrate a highly tunable second-harmonic generation in a fully complementary metal-oxide-semiconductor (CMOS)-fabrication-compatible silicon nitride integrated photonic platform. We induce the second-order nonlinearity using an all-optical poling technique with the second-harmonic light generated in the fundamental mode, and a narrow quasi-phase matching (QPM) spectrum by avoiding higher-order mode mixing. We are then able to broadly tune the phase-matched pump wavelength over the entire C-band (1540 nm to 1560 nm) by varying the poling conditions. Fine-tuning of QPM is enabled by thermo-optic effect with the tuning slope Δλ/ΔT in our device being 113.8 pm/°C. In addition, we exploit the measurable variation of the 3 dB QPM bandwidth to confirm how the length of the all-optically inscribed grating varies with exposure time.

Visible blue-to-red 10 GHz frequency comb via on-chip triple-sum-frequency generation.

A broadband visible (VIS) blue-to-red, 10 GHz repetition rate frequency comb is generated by combined spectral broadening and triple-sum-frequency generation in an on-chip silicon nitride waveguide. Ultra-short pulses of 150 pJ pulse energy, generated via electro-optic modulation of a 1560 nm continuous-wave laser (CW), are coupled to a silicon nitride waveguide giving rise to a broadband near-infrared (NIR) supercontinuum. Modal phase matching inside the waveguide allows direct triple-sum-frequency transfer of the NIR supercontinuum into the VIS wavelength range covering more than 250 THz from below 400 to above 600 nm wavelength. This scheme directly links the mature optical telecommunication band technology to the VIS wavelength band and can find application in astronomical spectrograph calibration, as well as referencing of CW lasers.

Linear Electro-optic Effect in Silicon Nitride Waveguides Enabled by Electric-Field Poling.

Stoichiometric silicon nitride (Si3N4) is one of the most mature integrated photonic platforms for linear and nonlinear optical applications on-chip. However, because it is a centrosymmetric material, second-order nonlinear processes are inherently not available in Si3N4, limiting its use for multiple classical and quantum applications. In this work, we implement thermally assisted electric-field poling, which allows charge carrier separation in the waveguide core, leading to a depletion zone formation and the inscription of a strong electric field reaching 20 V/µm. The latter results in an effective second-order susceptibility (χ(2)) inside the Si3N4 waveguide, making linear electro-optic modulation accessible on the platform for the first time. We develop a numerical model for simulating the poling process inside the waveguide and use it to calculate the diffusion coefficient and the concentration of the charge carriers responsible for the field formation. The charge carrier concentration, as well as the waveguide core size, is found to play a significant role in determining the achievable effective nonlinearity experienced by the optical mode inside the waveguide. Current findings establish a strong groundwork for further advancement of χ(2)-based devices on Si3N4.

Waveguide-PAINT offers an open platform for large field-of-view super-resolution imaging.

Super-resolution microscopies based on the localization of single molecules have been widely adopted due to their demonstrated performance and their accessibility resulting from open software and simple hardware. The PAINT method for localization microscopy offers improved resolution over photoswitching methods, since it is less prone to sparse sampling of structures and provides higher localization precision. Here, we show that waveguides enable increased throughput and data quality for PAINT, by generating a highly uniform ~100 × 2000 µm2 area evanescent field for TIRF illumination. To achieve this, we designed and fabricated waveguides optimized for efficient light coupling and propagation, incorporating a carefully engineered input facet and taper. We also developed a stable, low-cost microscope and 3D-printable waveguide chip holder for easy alignment and imaging. We demonstrate the capabilities of our open platform by using DNA-PAINT to image multiple whole cells or hundreds of origami structures in a single field of view.