Control of layer stacking in CVD graphene under quasi-static condition.

The type of layer stacking in bilayer graphene has a significant influence on its electronic properties because of the contrast nature of layer coupling. Herein, different geometries of the reaction site for the growth of bilayer graphene by the chemical vapor deposition (CVD) technique and their effects on the nature of layer stacking are investigated. Micro-Raman mapping and curve fitting analysis confirmed the type of layer stacking for the CVD grown bilayer graphene. The samples grown with sandwiched structure such as quartz/Cu foil/quartz along with a spacer, between the two quartz plates to create a sealed space, resulted in Bernal or AB stacked bilayer graphene while the sample sandwiched without a spacer produced the twisted bilayer graphene. The contrast difference in the layer stacking is a consequence of the difference in the growth mechanism associated with different geometries of the reaction site. The diffusion dominated process under quasi-static control is responsible for the growth of twisted bilayer graphene in sandwiched geometry while surface controlled growth with ample and continual supply of carbon in sandwiched geometry along with a spacer, leads to AB stacked bilayer graphene. Through this new approach, an efficient technique is presented to control the nature of layer stacking.

Facile and Nondestructive Transformation of Intrinsic Hydrophobic Behavior of a Carbon Nanotubes Sheet to Hydrophilic.

It is imperative to induce hydrophilicity in intrinsically hydrophobic carbon nanotubes (CNTs) without losing their superior properties for applications that specifically deal with aqueous media. A method for transforming a CNTs sheet from hydrophobic to hydrophilic by treatment with N-methyl-2-pyrrolidone (NMP) is explored. The NMP-treated CNT sheets are assessed based on complementing characterization, and it is concluded that the binding of NMP to a CNTs surface is through noncovalent interaction without the incorporation of defects in CNTs. The induced hydrophilicity in the CNTs sheet is stable for water exposure over a longer duration while it displays a semireversible nature upon heat treatment. The mechanical and electrical properties of the NMP-treated CNTs sheet revealed enhancement in the tensile strength from 221 to 421 MPa while maintaining a good electrical conductivity of ∼1.22 × 104 S/m because of the improved interfacial properties. The hydrophilic CNTs exhibited excellent adsorption capacity for methylene blue dye. The NMP-treated CNTs sheets demonstrated their suitability in flexible hybrid supercapacitor (FHSC) devices with improved electrochemical performance with enhancement in the capacitance from 5.4 to 7.6 F/g and a decrease in the equivalent series resistance from 53 to 34 Ω compared to pristine CNTs-based devices. These solid-state FHSC devices displayed excellent cyclic charge-discharge performance along with robust behavior over thousands of bending cycles without significant performance degradation. The excellent dye removal capability and superior electrochemical performance of the NMP-treated CNTs sheet is a consequence of their improved interface with aqueous media, which is governed by the hydrophilic nature of the CNTs sheet.

Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam Epitaxy.

We report the direct growth of crystalline GaN on bare copper (Cu) and monolayer-graphene/Cu metal foils using laser molecular beam epitaxy technique at growth temperature of 700 °C. The surface morphology investigated with field emission scanning electron microscopy revealed that the size of GaN grains for film grown on bare Cu falls in range of 90 to 160 nm whereas large grains with size of ˜200 to 600 nm was obtained for GaN grown on graphene/Cu foil under similar growth condition. The transverse optical mode of cubic GaN and E2 (high) phonon mode for wurtzite GaN phases were obtained on the GaN film grown on Cu and graphene/Cu metal foils as deduced by Raman spectroscopy. The photoluminescence (PL) spectroscopy studies showed that the near band edge emission peaks for GaN on Cu and graphene/Cu consist two major peaks at 3.26 and 3.4 eV, corresponding to cubic and wurtzite GaN, respectively. The Raman and PL studies disclosed that the mixed phase growth of GaN occurs on these foils and better structural and optical quality for GaN on graphene/Cu foil. The direct growth of GaN on two dimensional graphene on polycrystalline metal foils is beneficial various transferrable and flexible opto-electronics device applications.