Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device.

Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO3(STO) heterojunction-based memory devices with silver (Ag) and copper (Cu) top electrodes. The SnSe/STO-based memory devices present bipolar resistive switching (RS) with two orders of magnitude on/off ratio, which is reliable and stable. Moreover, multilevel state switching is achieved in the devices by sweeping voltage with current compliance to SET the device from high resistance state (HRS) to low resistance state (LRS) and RESET from LRS to HRS by voltage pulses without compliance current. With Ag and Cu top electrodes, respectively, eight and six levels of resistance switching were demonstrated in the SnSe/SrTiO3 heterostructures with a Pt bottom electrode. These results suggest that a SnSe/STO heterojunction-based memristor is promising for applications in neuromorphic computing as a synaptic device.

Tunable high acoustic impedance alumina epoxy composite matching for high frequency ultrasound transducer.

Matching layer is a critical component that determines the performance of piezoelectric ultrasound transducer. For most piezoelectric materials, their acoustic impedances are significantly higher than human tissues and organs, so a tunable matching layer with a high acoustic impedance is required for optimizing the acoustic wave transmission. In this article, a high compression fabrication method is presented, with which the acoustic impedance of alumina-epoxy composite matching layer can be tuned from 6.50 to 9.47 MRayl by controlling the applied compression pressure and ratio of the components. The maximum acoustic impedance 9.47 MRayl can be achieved by compressing a mixture of 80% alumina weight ratio under a 62.4 MPa pressure. This enhancement mainly relies on the increased acoustic longitudinal velocity which enlarged the tolerance of high to ultra-high frequency transducer fabrication using quarter wavelength matching design. Furthermore, the attenuation of the matching layer developed by this method is only -10 dB/mm at 40 MHz. The very high acoustic impedance value and very low attenuation make this matching material superior than all reported matching materials, and therefore, can enhance the performance of the ultrasound transducers, especially for medical imaging applications.

A dual mode electronic synapse based on layered SnSe films fabricated by pulsed laser deposition.

An artificial synapse, such as a memristive electronic synapse, has caught world-wide attention due to its potential in neuromorphic computing, which may tremendously reduce computer volume and energy consumption. The introduction of layered two-dimensional materials has been reported to enhance the performance of the memristive electronic synapse. However, it is still a challenge to fabricate large-area layered two-dimensional films by scalable methods, which has greatly limited the industrial application potential of two-dimensional materials. In this work, a scalable pulsed laser deposition (PLD) method has been utilized to fabricate large-area layered SnSe films, which are used as the functional layers of the memristive electronic synapse with dual modes. Both long-term memristive behaviour with gradually changed resistance (Mode 1) and short-term memristive behavior with abruptly reduced resistance (Mode 2) have been achieved in this SnSe-based memristive electronic synapse. The switching between Mode 1 and Mode 2 can be realized by a series of voltage sweeping and programmed pulses. The formation and recovery of Sn vacancies were believed to induce the short-term memristive behaviour, and the joint action of Ag filament formation/rupture and Schottky barrier modulation can be the origin of long-term memristive behaviour. DFT calculations were performed to further illustrate how Ag atoms and Sn vacancies diffuse through the SnSe layer and form filaments. The successful emulation of synaptic functions by the layered chalcogenide memristor fabricated by the PLD method suggests the application potential in future neuromorphic computers.

High-Temperature Anomalous Hall Effect in a Transition Metal Dichalcogenide Ferromagnetic Insulator Heterostructure.

Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using a heterostructure approach by depositing it on a ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large RAHE is more than 1 order of magnitude larger than those previously reported values in topological insulators or TMD-based heterostructures. A complicated interface with additional ZrO2 and amorphous YIG layers is actually observed between ZrTe2 and YIG. The magnetization of interfacial reaction-induced ZrO2 and YIG is believed to play a crucial role in the induced high-temperature AHE in the ZrTe2. These results present a promising system for the spintronic device applications, and it may shed light on the designing approach to introduce magnetism to TMDs at room temperature.

Magnetotransport Properties of Layered Topological Material ZrTe2 Thin Film.

ZrTe2 is a candidate topological material from the layered two-dimensional transition-metal dichalcogenide family, and thus the material may show exotic electrical transport properties and may be promising for quantum device applications. In this work, we report the successful growth of layered ZrTe2 thin film by pulsed-laser deposition and the experimental results of its magnetotransport properties. In the presence of a perpendicular magnetic field, the 60 nm thick ZrTe2 film shows a large magnetoresistance of 3000% at 2 K and 9 T. A robust linear magnetoresistance is observed under an in-plane magnetic field, and negative magnetoresistance appears in the film when the magnetic field is parallel to the current direction. Furthermore, the Hall results reveal that the ZrTe2 thin film has a high electron mobility of about 1.8 × 104 cm2 V-1 s-1 at 2 K. These findings provide insights into further investigations and potential applications of this layered topological material system.