Tungsten disulfide thin films via electrodeposition from a single source precursor.

We report a simple process for the electrodeposition of tungsten disulfide thin films from a CH2Cl2-based electrolyte using a tailored single source precursor, [NEt4]2[WS2Cl4]. This new precursor incorporates the 1 : 2 W : S ratio required for formation of WS2, and eliminates the need for an additional proton source in the electrolyte to remove excess sulfide. The electrochemical behaviour of [NEt4]2[WS2Cl4] is studied by cyclic voltammetry and electrochemical quartz crystal microbalance techniques, and the WS2 thin films are grown by potentiostatic electrodeposition.

Growth of Homogeneous Luminescent Silicon-Terbium Nanowires by One-Step Electrodeposition in Ionic Liquids.

An electrodeposition method for the growth of homogeneous silicon-terbium nanowires (NWs) with green light emission is described. The method involves template-assisted electrochemical co-deposition of Si/Tb NWs with 90-nm diameter from an electrolyte bath containing Si and Tb precursors in an ionic liquid (IL). This method of deposition is advantageous over other conventional techniques as it is relatively simple and cost-effective and avoids harsh deposition conditions. The deposited NWs are of uniform dimensions with homogeneous composition incorporating 10% of Tb and exhibit intense room temperature (RT) luminescence in the visible range due to Tb emission. These results were confirmed by combining classical characterization such as scanning electron microscopy (SEM) and photoluminescence (PL) performed on an assembly of NWs with spatially resolved experiments such as transmission electron microscopy (TEM) and cathodoluminescence (CL). This electrodeposition method provides an alternative and extremely simple approach for depositing silicon-rare earth nanostructures for optical and sensing applications.

Thioether complexes of WSCl4, WOCl4 and WSCl3 and evaluation of thiochloride complexes as CVD precursors for WS2 thin films.

The red-brown [(WSCl4)2{µ-RS(CH2)2SR}] (R = Me, Ph, iPr) and [(WSCl4)2{µ-MeS(CH2)3SMe}] have been made by reaction of WSCl4 with the thioether in a 2 : 1 molar ratio, in anhydrous CH2Cl2 solution, and characterised by microanalysis, IR, UV/Vis and 1H NMR spectroscopy. The X-ray structures of the four dithioether complexes reveal square pyramidal WSCl4 units and bridging dithioethers with W[double bond, length as m-dash]S trans to thioether sulfur. Paramagnetic W(v) complexes, [WSCl3{RS(CH2)2SR}] (R = Me, iPr), have been made similarly using a 1 : ≥1 ratio of reactants or longer reaction times. The W(vi) complexes, [WSCl4(SMe2)] and [WSCl4(SeMe2)], are also described. Analogous complexes of WOCl4, [(WOCl4)2{RS(CH2)2SR}] (R = Ph, iPr), have been made similarly from WOCl4, but reactions using MeS(CH2)nSMe (n = 2, 3) led to reduction to W(v), forming [WOCl3{MeS(CH2)nSMe], both of which were identified crystallographically. Curiously, they are geometric isomers: [WOCl3{MeS(CH2)3SMe}] has the dithioether trans Cl/Cl whereas in [WOCl3{MeS(CH2)2SMe}] it is trans O/Cl. Remarkably, low pressure chemical vapour deposition (CVD) experiments using the dinuclear W(vi) species, [(WSCl4)2{iPrS(CH2)2SiPr}], as a single source precursor produced thin films of 4H-WS2, identified by grazing incidence X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy; the tungsten thiochloride complex is the first single source low pressure CVD precursor for WS2. In contrast, the mononuclear W(v) complex, [WSCl3{iPrS(CH2)2SiPr}], does not deposit WS2 under similar conditions.

Large-Area Electrodeposition of Few-Layer MoS2 on Graphene for 2D Material Heterostructures.

Heterostructures involving two-dimensional (2D) transition metal dichalcogenides and other materials such as graphene have a strong potential to be the fundamental building block of many electronic and optoelectronic applications. The integration and scalable fabrication of such heterostructures are of the essence in unleashing the potential of these materials in new technologies. For the first time, we demonstrate the growth of few-layer MoS2 films on graphene via nonaqueous electrodeposition. Through methods such as scanning and transmission electron microscopy, atomic force microscopy, Raman spectroscopy, energy- and wavelength-dispersive X-ray spectroscopies, and X-ray photoelectron spectroscopy, we show that this deposition method can produce large-area MoS2 films with high quality and uniformity over graphene. We reveal the potential of these heterostructures by measuring the photoinduced current through the film. These results pave the way toward developing the electrodeposition method for the large-scale growth of heterostructures consisting of varying 2D materials for many applications.

Single step electrodeposition process using ionic liquid to grow highly luminescent silicon/rare earth (Er, Tb) thin films with tunable composition.

A one-step method for the electrodeposition of silicon-erbium (Si/Er) and silicon-terbium (Si/Tb) thin films using room temperature ionic liquid (RTIL) has been successfully developed. By playing with the electrochemical parameters, the concentration of incorporated rare earth (RE) ions (Er3+ and Tb3+) in the thin films can be tuned. The obtained thin films have been characterized by electron microscopy and composition analysis techniques. The structural quality of the obtained thin films is characterized by a uniform distribution of Si atoms and RE ions throughout the thickness. The study of the optical properties, carried out by photoluminescence (PL) spectroscopy, demonstrates the efficient optical activity of the films with typical Er and Tb luminescence at room temperature depending on the RE content. The deposition method described is a promising strategy for incorporating RE ions in semiconducting thin films to achieve materials for opto-electronic applications.