Sensing Properties of a Novel Temperature Sensor Based on Field Assisted Thermal Emission.

The existing temperature sensors using carbon nanotubes (CNTs) are limited by low sensitivity, complicated processes, or dependence on microscopy to observe the experimental results. Here we report the fabrication and successful testing of an ionization temperature sensor featuring non-self-sustaining discharge. The sharp tips of nanotubes generate high electric fields at relatively low voltages, lowering the work function of electrons emitted by CNTs, and thereby enabling the safe operation of such sensors. Due to the temperature effect on the electron emission of CNTs, the collecting current exhibited an exponential increase with temperature rising from 20 °C to 100 °C. Additionally, a higher temperature coefficient of 0.04 K-1 was obtained at 24 V voltage applied on the extracting electrode, higher than the values of other reported CNT-based temperature sensors. The triple-electrode ionization temperature sensor is easy to fabricate and converts the temperature change directly into an electrical signal. It shows a high temperature coefficient and good application potential.

Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses.

An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and subsequently transferred onto GaN substrate using polymethylmethacrylate (PMMA). The morphological and optical properties of the as-prepared graphene and GaN were presented. The fabricated PD based on the graphene/GaN heterostructure exhibited excellent rectify behavior by measuring the current-voltage (I-V) characteristics under dark conditions, and the spectral response demonstrated that the device revealed an UV-IR dual-wavelength photoresponse. In addition, the energy band structure and absorption properties of the ML graphene/GaN heterostructure were theoretically investigated based on density functional theory (DFT) to explore the underlying physical mechanism of the two-dimensional (2D)/three-dimensional (3D) hybrid heterostructure PD device. This work paves the way for the development of innovative GaN-based dual-wavelength optoelectronic devices, offering a potential strategy for future applications in the field of advanced photodetection technology.

Growth, structural, thermal, dielectric and optical studies on HBST crystal: A potential THz emitter.

The efficient organic nonlinear optical material 4-hydroxy benzaldehyde-N-methyl 4-stilbazolium tosylate (HBST) was grown from methanol by slope nucleation method combined with slow cooling (SNM-SC) for the first time. The optimum growth conditions based on the cooling rate was further investigated. The single crystal X-ray diffraction (XRD) revealed that the chromophores of HBST crystal make an angle of about 33° with respect to the a-axis, which is close to the optimum of Terahertz (THz)-wave generation and electro-optics applications. NMR and FT-IR spectral studies have been performed to ascertain various functional groups present in the sample. Futhermore, the thermal stability and decomposition stages were analyzed through TG-DTA and DSC techniques. The dielectric constant and dielectric loss of HBST crystal have been studied. Critical optical properties like the absorption coefficient, refractive index, cut-off wavelength and band gap energy were calculated. Photoluminescence (PL) exication studies indicated green emission occured at 507nm. All the results of HBST crystal make it a promising candidate in the fields of optoelectronic and the generation of THz.