Metallic and ceramic thin film thermocouples for gas turbine engines.

Temperatures of hot section components in today's gas turbine engines reach as high as 1,500 °C, making in situ monitoring of the severe temperature gradients within the engine rather difficult. Therefore, there is a need to develop instrumentation (i.e., thermocouples and strain gauges) for these turbine engines that can survive these harsh environments. Refractory metal and ceramic thin film thermocouples are well suited for this task since they have excellent chemical and electrical stability at high temperatures in oxidizing atmospheres, they are compatible with thermal barrier coatings commonly employed in today's engines, they have greater sensitivity than conventional wire thermocouples, and they are non-invasive to combustion aerodynamics in the engine. Thin film thermocouples based on platinum:palladium and indium oxynitride:indium tin oxynitride as well as their oxide counterparts have been developed for this purpose and have proven to be more stable than conventional type-S and type-K thin film thermocouples. The metallic and ceramic thin film thermocouples described within this paper exhibited remarkable stability and drift rates similar to bulk (wire) thermocouples.

Thermoelectric properties and microstructure of Cu-In-O thin films.

Combinatorial chemistry techniques were used to study the thermoelectric properties of sputtered thin films in the system copper oxide (CuO) and indium oxide (In2O3). Seven hundred seventy thin film thermocouples or combinatorial library elements were simultaneously deposited, each with a unique spatially dependent chemistry, based on the relative position of the thermocouples to each sputtering target. The resulting thermoelectric properties of each element were determined along with electrical resistivity as a function of composition. Energy dispersive spectroscopy was used to identify the composition of each thermo-element, and electron and X-ray diffraction were used to determine the degree of crystallinity and phases present. Transmission electron microscopy was used to characterize the microstructure of selected thermo-elements. A change in sign of the thermoelectric voltage was observed in the thermo-element containing 40.0 atomic percent indium, which suggests a change in the dominant carrier type occurred, from p-type to n-type. Based on this finding, the fabrication of thermoelectric p-n junctions using the same base Cu-In-O semiconductor appears feasible.