Architecture for Surface-Emitting Lasers with On-Demand Lasing Wavelength by Nanowire Optical Cavities.

Despite the importance and exciting progress of surface-emitting (SE) semiconductor lasers, we have limited choices of lasing wavelength even today. From an application viewpoint, it is desirable to have an architecture that can allow SE lasing in a wide spectral range, based on the need of applications. Herein, we demonstrate a path for SE lasers with lasing wavelength on demand by exploiting III-nitride nanowire optical cavities formed by low-temperature selective area epitaxy (SAE), combined with fine-tuning of substrate patterns and photonic bands. Moreover, in this study, we focus on the device demonstration in the ultraviolet (UV) spectral range, considering the severe lag in developing SE lasers in the UV wavelength range compared to longer wavelengths, e.g., near-infrared (NIR), as well as the potential applications enabled by UV lasers such as solar blind optical wireless communications. Ultralow threshold wavelength-tunable SE UV lasing is achieved by optical pumping. Moreover, SE UV lasing under direct electric current injection is also achieved. This study not only represents an important step in the journey of SE UV laser development but, more importantly, it lays the ground for SE lasers with lasing wavelength on demand, broadly from NIR to UV.

Facile Semiconductor p-n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications.

Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications. In particular, emerging photoelectrochemical (PEC)-type devices have recently attracted extensive interest in liquid-based biosensing applications due to their natural electrolyte-assisted operating characteristics. Herein, a PEC-type photosensor was carefully designed and constructed by employing gallium nitride (GaN) p-n homojunction semiconductor nanowires on silicon, with the p-GaN segment strategically doped and then decorated with cobalt-nickel oxide (CoNiOx). Essentially, the p-n homojunction configuration with facile p-doping engineering improves carrier separation efficiency and facilitates carrier transfer to the nanowire surface, while CoNiOx decoration further boosts PEC reaction activity and carrier dynamics at the nanowire/electrolyte interface. Consequently, the constructed photosensor achieves a high responsivity of 247.8 mA W-1 while simultaneously exhibiting excellent operating stability. Strikingly, based on the remarkable stability and high responsivity of the device, a glucose sensing system was established with a demonstration of glucose level determination in real human serum. This work offers a feasible and universal approach in the pursuit of high-performance bio-related sensing applications via a rational design of PEC devices in the form of nanostructured architecture with strategic doping engineering.

Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires.

Surface-emitting (SE) semiconductor lasers have changed our everyday life in various ways such as communication and sensing. Expanding the operation wavelength of SE semiconductor lasers to shorter ultraviolet (UV) wavelength range further broadens the applications to disinfection, medical diagnostics, phototherapy, and so on. Nonetheless, realizing SE lasers in the UV range has remained to be a challenge. Despite of the recent breakthrough in UV SE lasers with aluminum gallium nitride (AlGaN), the electrically injected AlGaN nanowire UV lasers are based on random optical cavities, whereas AlGaN UV vertical-cavity SE lasers (VCSELs) are all through optical pumping and are all with large lasing threshold power densities in the range of several hundred kW/cm2 to MW/cm2. Herein, we report ultralow threshold, SE lasing in the UV spectral range with GaN-based epitaxial nanowire photonic crystals. Lasing at 367 nm is measured, with a threshold of only around 7 kW/cm2 (~ 49 µJ/cm2), a factor of 100× reduction compared to the previously reported conventional AlGaN UV VCSELs at similar lasing wavelengths. This is also the first achievement of nanowire photonic crystal SE lasers in the UV range. Further given the excellent electrical doping that has already been established in III-nitride nanowires, this work offers a viable path for the development of the long-sought-after semiconductor UV SE lasers.