RESUMO
Mask-aligner lithography is traditionally performed using mercury arc lamps with wavelengths ranging from 250 nm to 600 nm with intensity peaks at the i, g and h lines. Since mercury arc lamps present several disadvantages, it is of interest to replace them with high power light emitting diodes (LEDs), which recently appeared on the market at those wavelengths. In this contribution, we present a prototype of an LED-based mask-aligner illumination. An optical characterization is made and the prototype is tested in a mask-aligner. Very good performances are demonstrated. The measured uniformity in the mask plane is 2.59 ± 0.24 % which is within the uniformity of the standard lamp. Print tests show resolution of 1 micron in contact printing and of 3 microns in proximity printing with a proximity gap of 30 microns.
RESUMO
The Talbot effect is utilized for micro-fabrication of periodic microstructures via proximity lithography in a mask aligner. A novel illumination system, referred to as MO Exposure Optics, allows to control the effective source shape and accordingly the angular spectrum of the illumination light. Pinhole array photomasks are employed to generate periodic high-resolution diffraction patterns by means of self-imaging. They create a demagnified image of the effective source geometry in their diffraction pattern which is printed to photoresist. The proposed method comprises high flexibility and sub-micron resolution at large proximity gaps. Various periodic structures have been generated and are presented.
Assuntos
Iluminação/instrumentação , Fotografação/instrumentação , Refratometria/instrumentação , Desenho de Equipamento , Análise de Falha de EquipamentoRESUMO
A new illumination system for mask aligner lithography is presented. The illumination system uses two subsequent microlens-based Köhler integrators. The second Köhler integrator is located in the Fourier plane of the first. The new illumination system uncouples the illumination light from the light source and provides excellent uniformity of the light irradiance and the angular spectrum. Spatial filtering allows to freely shape the angular spectrum to minimize diffraction effects in contact and proximity lithography. Telecentric illumination and ability to precisely control the illumination light allows to introduce resolution enhancement technologies (RET) like customized illumination, optical proximity correction (OPC) and source-mask optimization (SMO) in mask aligner lithography.